scholarly journals High-k Polymer Nanocomposite Materials for Technological Applications

2020 ◽  
Vol 10 (12) ◽  
pp. 4249
Author(s):  
Ganesh Shimoga ◽  
Sang-Youn Kim
Keyword(s):  
Polymer Nanocomposites ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Polymer Nanocomposite ◽  
Tunable Capacitors ◽  
Contemporary World ◽  
Nanocomposite Polymer ◽  
Electro Optic ◽  
High K ◽  
High Dielectric

Understanding the properties of small molecules or monomers is decidedly important. The efforts of synthetic chemists and material engineers must be appreciated because of their knowledge of how utilize the properties of synthetic fragments in constructing long-chain macromolecules. Scientists active in this area of macromolecular science have shared their knowledge of catalysts, monomers and a variety of designed nanoparticles in synthetic techniques that create all sorts of nanocomposite polymer stuffs. Such materials are now an integral part of the contemporary world. Polymer nanocomposites with high dielectric constant (high-k) properties are widely applicable in the technological sectors including gate dielectrics, actuators, infrared detectors, tunable capacitors, electro optic devices, organic field-effect transistors (OFETs), and sensors. In this short colloquy, we provided an overview of a few remarkable high-k polymer nanocomposites of material science interest from recent decades.

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

Hafnia surface and high-k gate stacks

2009 ◽  
Vol 1155 ◽  
Author(s):  
Xuhui Luo ◽  
Alex Demkov ◽  
Onise Sharia ◽  
Gennadi Bersuker
Keyword(s):  
Theoretical Study ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Hafnium Dioxide ◽  
Band Alignment ◽  
Gate Stacks ◽  
High K ◽  
Structural And Electronic Properties ◽  
High Dielectric

AbstractHafnium dioxide that belongs to a class of metal oxides with a high dielectric constant or high-k dielectrics has been recently introduced as a gate dielectric in field effect transistors. We report a theoretical study of structural and electronic properties of hafnia surface, and the electronic structure and band alignment at hafnia interfaces with metals, oxides and semiconductors that are crucial in gate stack engineering.

Band Alignments of High-K Dielectrics on Si and Pt

1999 ◽  
Vol 592 ◽  
Author(s):  
J Robertson ◽  
E Riassi ◽  
J-P Maria ◽  
A I Kingon
Keyword(s):  
Conduction Band ◽  
Gate Dielectrics ◽  
Random Access ◽  
Leakage Currents ◽  
Band Offsets ◽  
Silicon Devices ◽  
High K ◽  
Band Alignments ◽  
High K Materials ◽  
High Dielectric

ABSTRACTMaterials with a high dielectric constant (K) such as tantalum pentoxide (Ta2O5) and barium strontium titanate (BST) are needed for insulators in dynamic random access memory capacitors and as gate dielectrics in future silicon devices. The band offsets of these oxides must be over 1 eV for both electrons and holes, to minimise leakage currents due to Schottky emission. We have calculated the band alignments of many high K materials on Si and metals using the method of charge neutrality levels. Ta2O5 and BST have rather small conduction band offsets on Si, because the band alignments are quite asymmetric. Other wide gap materials Al2O3, Y2O3, ZrO2 and ZrSiO4 are found to have offsets of over 1.5 eV for both electrons and holes, suggesting that these are preferable dielectrics. Zirconates such as BaZrO3 have wider gaps than the titanates, but they still have rather low conduction band offsets on Si. The implications of the results for future generations of MOSFETs and DRAMS are discussed.

Pulsed plasma polymerized dichlorotetramethyldisiloxane high-k gate dielectrics for polymer field-effect transistors

2006 ◽  
Vol 99 (1) ◽  
pp. 014104 ◽  
Author(s):  
Yifan Xu ◽  
Paul R. Berger ◽  
Jai Cho ◽  
Richard B. Timmons
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Pulsed Plasma ◽  
High K
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