scholarly journals Fractal-Stereometric Correlation of Nanoscale Spatial Patterns of GdMnO3 Thin Films Deposited by Spin Coating

2021 ◽  
Vol 11 (9) ◽  
pp. 3886
Author(s):  
Yonny Romaguera-Barcelay ◽  
Ştefan Ţălu ◽  
Robert Saraiva Matos ◽  
Rosane Maria Pessoa Betânio Oliveira ◽  
Joaquim Agostinho Moreira ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Spatial Patterns ◽  
Spin Coating ◽  
Lower Surface ◽  
Physical Parameters ◽  
Si Substrates ◽  
Topographic Roughness ◽  
Atomic Force ◽  
Fractal Parameters

Multiferroic systems are of great interest for technological applications. To improve the fabrication of thin films, stereometric and fractal analysis of surface morphology have been extensively performed to understand the influence of physical parameters on the quality of spatial patterns. In this work, GaMnO3 was synthesized and thin films were deposited on Pt(111)/TiO2/SiO2/Si substrates using a spin coating apparatus to study the correlation between their stereometric and fractal parameters. All films were studied by X-ray diffraction (XRD), where the structure and microstructure of the film sintered at 850 °C was investigated by Rietveld refinement. Topographic maps of the films were obtained using an atomic force microscope (AFM) in tapping mode. The results show that the film sintered at 850 °C exhibited a clear formation of a GdMnO3 orthorhombic structure with crystallite size of ~14 nm and a microstrain higher than other values reported in the literature. Its surface morphology presented a rougher topography, which was confirmed by the height parameters. Topographic differences due to different asymmetries and shapes of the height distributions between the films were observed. Specific stereometric parameters also showed differences in the morphology and microtexture of the films. Qualitative rendering obtained by commercial image processing software revealed substantial differences between the microtextures of the films. Fractal and advanced fractal parameters showed that the film sintered at 850 °C had greater spatial complexity, which was due to their higher topographic roughness, lower surface percolation and greater topographic uniformity, being dominated by low dominant special frequencies. Our combination of stereometric and fractal measurements can be useful to improve the fabrication process by optimizing spatial patterns as a function of the sintering temperature of the film.

scholarly journals Investigation of Stereometric and Fractal Patterns of Spin-Coated LuMnO3 Thin Films

2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Igor Hernandes Gomes Marques ◽  
Robert Saraiva Matos ◽  
Yonny Romaguera-Barcelay ◽  
Ştefan Ţălu ◽  
Joaquim Agostinho Moreira ◽  
...  
Keyword(s):  
Thin Films ◽  
Spatial Patterns ◽  
Three Dimensional ◽  
Root Mean Square Roughness ◽  
Height Distribution ◽  
Si Substrates ◽  
Spatial Frequencies ◽  
Fractal Parameters ◽  
Fractal Patterns ◽  
Processing Techniques

In this paper, we have performed qualitative and quantitative analysis of LuMnO3 thin films surfaces, deposited by spin coating over Pt(111)/TiO2/SiO2/Si substrates, to evaluate their spatial patterns as a function of the film’s sintering temperature. Atomic force microscopy was employed to obtain topographic maps that were extensively analyzed via image processing techniques and mathematical tools. 3D (three-dimensional) topographical images revealed that films sintered at 650°C and 750°C presented the formation of smoother surfaces, while the film sintered at 850°C displayed a rougher surface with a root mean square roughness of ∼2.5 nm. On the other direction, the height distribution of the surface for all films has similar asymmetries and shape, although the film sintered using the highest temperature showed the lower density of rough peaks and a sharper peak shape. The advanced fractal parameters revealed that the film sintered at 850°C is dominated by low spatial frequencies, showing less spatial complexity, higher microtexture homogeneity, and uniform height distribution. These results suggest that the combination of stereometric and fractal parameters can be especially useful for identification of unique topographic spatial patterns in LuMnO3 thin films, helping in their implementation in technological applications, such as photovoltaic solar cells and information magnetic date storage and spintronic devices.

Nanostructured TiO2 Thin Film by Sol-Gel Spin Coating with Different Concentration

2015 ◽  
Vol 1109 ◽  
pp. 529-533
Author(s):  
Irma Hidayanti Halim Affendi ◽  
Najwa Ezira Ahmed Azhar ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Spin Coating ◽  
Sol Gel ◽  
Force Microscopy ◽  
Nanostructured Thin Film ◽  
Atomic Force ◽  
Current Voltage

The production of TiO2 nanostructured thin film was synthesized by sol-gel method using TiO2 nanopowder as precursor. The solution of TiO2 was then deposited as thin film onto glass substrate by spin-coating technique. The aim is to investigate the effect of concentrations on the surface morphology and electrical properties of the thin films. The effect on the surface morphology was observed by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). The electrical properties were then observed by two-point probe method. By measuring the current-voltage (IV) characteristic, resistivity and conductivity can be measured. The purpose of this paper is to investigate the surface morphology and the IV characteristic of the thin films.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Photoconductivity of Nanocomposite MEH-PPV: TiO2 Thin Films

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Spin Coating ◽  
Glass Substrate ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Current Voltage ◽  
Current Voltage Characteristics

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.

Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
M. E. Ware ◽  
R. J. Nemanich
Keyword(s):  
Stress Relaxation ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Deposited Films

AbstractThis study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100nm thick Si(1−x) Ge(x) epitaxial layers with x=0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

Biocompatibility Studies of the Nitinol Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fibroblast Cell ◽  
Vero Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fetal Bovine ◽  
Fibroblast Cell Lines

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

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