scholarly journals Evolution of Polymer Tantalum Capacitors

2021 ◽  
Vol 11 (12) ◽  
pp. 5514
Author(s):  
Yuri Freeman ◽  
Philip Lessner
Keyword(s):  
Low Voltage ◽  
Series Resistance ◽  
Cost Effective ◽  
Equivalent Series Resistance ◽  
Mission Critical

The major advantage of Polymer Tantalum capacitors over other types of tantalum capacitors is their low equivalent series resistance (ESR), providing a higher capacitance stability with frequency and ripple current capability. When Polymer Tantalum capacitors were introduced to the market in mid 1990s, they were low voltage, leaky, and unreliable, which limited their applications to commercial electronics. Today, some types of polymer tantalum capacitors demonstrate the highest working voltage, lowest DC leakage, and highest reliability ever achieved in tantalum capacitors. These Polymer Tantalum capacitors combine outstanding performance and reliability with superior volumetric charge efficiency, which makes them cost effective and attractive for numerous applications, including mission critical ones. This paper is dedicated to the major technological breakthroughs and scientific discoveries that enabled the radical evolution of Polymer Tantalum capacitors.

Measuring the Equivalent Series Resistance of the Low Impedance Electrolytic Capacitors in Pulsed Current State

2013 ◽  
Vol 333-335 ◽  
pp. 122-125
Author(s):  
Xu Fei Wang ◽  
Kai Xie ◽  
Teng Li ◽  
Zhong Qun Li ◽  
Rong Bin Guo
Keyword(s):  
Series Resistance ◽  
Cost Effective ◽  
Calibration Method ◽  
Pulsed Current ◽  
Equivalent Series Resistance ◽  
Circuit Implementation ◽  
Electrolytic Capacitors ◽  
Current State ◽  
Cost Effective Method

A cost-effective method for quickly evaluating the equivalent series resistance (ESR) of electrolytic capacitors is proposed. This approach has the ability to measure the low ESR of milliohms level, meanwhile provide the pulsed testing current up to hundreds of amperes. Therefore, this method is suitable for fast inspecting the quality of bulk capacitors. The operational principle, circuit implementation and the calibration method are presented, and the performances of the prototype are tested, which validate the proposed scheme.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

Impact of Cationic Molecular Length of Ionic Liquid Electrolytes on Cell Performances of 18650 Supercapacitors

2021 ◽  
Author(s):  
Phatsawit Wuamprakhon ◽  
Ruttiyakorn Donthongkwa ◽  
Kanit Hantanasirisakul ◽  
Vinich Promarak ◽  
Jumras Limtrakul ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Ionic Liquids ◽  
Porous Carbon ◽  
Room Temperature ◽  
Series Resistance ◽  
Room Temperature Ionic Liquids ◽  
Specific Cell ◽  
Equivalent Series Resistance ◽  
Molecular Length ◽  
Cell Capacitance

The specific cell capacitance, equivalent series resistance (ESR) and equivalent distributed resistance (EDR) of porous carbon-based supercapacitors linearly depend on the cation molecular length (1 dimension) of room-temperature ionic liquids.

scholarly journals How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors

Molecules ◽  
2019 ◽  
Vol 24 (8) ◽  
pp. 1452 ◽  
Author(s):  
Rafael Vicentini ◽  
Leonardo Morais Da Silva ◽  
Edson Pedro Cecilio Junior ◽  
Thayane Almeida Alves ◽  
Willian Gonçalves Nunes ◽  
...  
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Series Resistance ◽  
Voltage Drop ◽  
Equivalent Series Resistance ◽  
Galvanostatic Charge ◽  
Applied Current ◽  
Double Layer Capacitors ◽  
Charge Discharge ◽  
Electric Double Layer Capacitors

Electric double-layer capacitors (EDLCs) are energy storage devices that have attracted attention from the scientific community due to their high specific power storage capabilities. The standard method for determining the maximum power (Pmax) of these devices uses the relation Pmax = U2/4RESR, where U stands for the cell voltage and RESR for the equivalent series resistance. Despite the relevance of RESR, one can observe a lack of consensus in the literature regarding the determination of this parameter from the galvanostatic charge-discharge findings. In addition, a literature survey revealed that roughly half of the scientific papers have calculated the RESR values using the electrochemical impedance spectroscopy (EIS) technique, while the other half used the galvanostatic charge discharge (GCD) method. RESR values extracted from EIS at high frequencies (>10 kHz) do not depend on the particular equivalent circuit model. However, the conventional GCD method better resembles the real situation of the device operation, and thus its use is of paramount importance for practical purposes. In the latter case, the voltage drop (ΔU) verified at the charge-discharge transition for a given applied current (I) is used in conjunction with Ohm’s law to obtain the RESR (e.g., RESR = ΔU/ΔI). However, several papers have caused a great confusion in the literature considering only applied current (I). In order to shed light on this important subject, we report in this work a rational analysis regarding the GCD method in order to prove that to obtain reliable RESR values the voltage drop must be normalized by a factor of two (e.g., RESR = ΔU/2I).

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