Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles. With the increasing integration of semiconductor devices, the CMP process is gaining increasing importance in semiconductor manufacturing. Abrasive-free CMP (AF-CMP) uses chemical solutions that do not contain abrasive particles to reduce scratches and improve planarization capabilities. However, because AF-CMP does not use abrasive particles for mechanical material removal, the material removal rate (MRR) is lower than that of conventional CMP methods. In this study, we attempted to improve the material removal efficiency of AF-CMP using electrolytic ionization of a chemical solution (electrolytically ionized abrasive-free CMP; EAF-CMP). EAF-CMP had a higher MRR than AF-CMP, possibly due to the high chemical reactivity and mechanical material removal of the former. In EAF-CMP, the addition of hydrogen peroxide (H2O2) and citric acid increased the MRR, while the addition of benzotriazole (BTA) lowered this rate. The results highlight the need for studies on diverse chemical solutions and material removal mechanisms in the future.

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Development of a New Plate Polishing Technique with an Instantaneous Tiny-Grinding Wheel Cluster Based on Magnetorheological Effect

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.53-54.155 ◽

2008 ◽

Vol 53-54 ◽

pp. 155-160 ◽

Cited By ~ 8

Author(s):

Qiu Sheng Yan ◽

Ai Jun Tang ◽

Jia Bin Lu ◽

Wei Qiang Gao

Keyword(s):

Surface Roughness ◽

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Grinding Wheel ◽

Abrasive Particles ◽

Magnetorheological Effect ◽

Material Removal Model ◽

Mr Effect ◽

Removal Model

A new plate polishing technique with an instantaneous tiny-grinding wheel cluster based on the magnetorheological (MR) effect is presented in this paper, and some experiments were conducted to prove its effectiveness and applicability. Under certain experimental condition, the material removal rate was improved by a factor of 20.84% as compared with the conventional polishing methods with dissociative abrasive particles, while the surface roughness of the workpiece was not obviously increased. Furthermore, the composite of the MR fluid was optimized to obtain the best polishing performance. On the basis of the experimental results, the material removal model of the new plate polishing technique was presented.

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Statistical Feature Extraction and Hybrid Feature Selection for Material Removal Rate Prediction in Chemical Mechanical Planarization Process

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm50988.2021.9421002 ◽

2021 ◽

Author(s):

Wenlan Jiang ◽

Chunpu Lv ◽

Bing Yang ◽

Fuquan Zhang ◽

Ying Gao ◽

...

Keyword(s):

Feature Extraction ◽

Feature Selection ◽

Material Removal Rate ◽

Material Removal ◽

Removal Rate ◽

Chemical Mechanical Planarization ◽

Statistical Feature ◽

Rate Prediction ◽

Planarization Process ◽

Selection For

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Non-Contact Ultrasonic Abrasive Machining of Wire-Electrical Discharge Machined SUS304 Steel

Volume 1: Processes ◽

10.1115/msec2017-2626 ◽

2017 ◽

Author(s):

K. L. Tan ◽

S. H. Yeo

Keyword(s):

Material Removal ◽

Cavitation Erosion ◽

Removal Rate ◽

Recast Layer ◽

Ultrasonic Machining ◽

Abrasive Machining ◽

Efficient Removal ◽

Abrasive Particles ◽

The Poor ◽

Lower Material

Non-contact ultrasonic abrasive machining (NUAM) is a variant of ultrasonic machining (USM). In NUAM, material is removed predominantly by cavitation erosion in abrasive slurry. Due to a significantly lower material removal rate than traditional USM, NUAM is investigated for its applicability on surface modification and finishing in this study. Experiments were conducted on SUS304 steel samples machined by wire electrical discharged machining (WEDM). Due to the thermal spark phenomenon during WEDM, a thermal recast layer, of thickness approximately 15 μm, is often left over on the specimen’s surface after the process. The undesired thermal recast layer contributes to the poor surface integrity of specimens. A NUAM system was configured using a 40 kHz ultrasonic system. Ultrasonic vibration amplitude of 70 μm at the horn tip was used to generate cavitation bubbles in the abrasive slurry. NUAM was found to be effective in removing the unstable thermal recast layers by means of cavitation erosion. As a result, the average surface roughness, Ra, of the specimens improved from approximately 2.5 μm to ∼1.7 μm after 20 minutes of processing time. Furthermore, the addition of abrasive particles was observed to aid in more efficient removal of thermal recast layers than a pure cavitation condition.

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Chemistry in Super Acids. I: Hydrogen Exchange and Polycondensation of Methane and Alkanes in FSO3H–SbF5 ("Magic Acid") Solution. Protonation of Alkanes and the Intermediacy of CH5+ and Related Hydrocarbon Ions. The High Chemical Reactivity of "Paraffins" in Ionic Solution Reactions

World Scientific Series in 20th Century Chemistry - Across Conventional Lines ◽

10.1142/9789812791405_0106 ◽

2003 ◽

pp. 569-570

Author(s):

George A. Olah ◽

Richard H. Schlosberg

Keyword(s):

Acid Solution ◽

Hydrogen Exchange ◽

Chemical Reactivity ◽

High Chemical ◽

Ionic Solution ◽

High Chemical Reactivity

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Parametric Optimization of Magnetic Abrasive Finishing Using Adhesive Magnetic Abrasive Particles

International Journal of Surface Engineering and Interdisciplinary Materials Science ◽

10.4018/ijseims.2019070103 ◽

2019 ◽

Vol 7 (2) ◽

pp. 34-47

Author(s):

Palwinder Singh ◽

Lakhvir Singh ◽

Arishu Kaushik

Keyword(s):

Surface Finish ◽

Medical Equipment ◽

Material Removal ◽

Parametric Optimization ◽

Removal Rate ◽

Improvement Rate ◽

Magnetic Abrasive Finishing ◽

Abrasive Particles ◽

Abrasive Finishing ◽

Depth Analysis

A very precise surface finish is desirable in manufacturing semiconductors, medical equipment, and aerospace parts. The examinations on magnetic abrasive finishing (MAF) processes are being done for the modern industry. This newly developed process is serving the industry to achieve the desired level of precision and surface finish. This research represents the MAF of aluminum pipes using adhesive magnetic abrasive particles. The different process parameters were optimized using the Response Surface Methodology (RSM) method to gain an in-depth analysis of surface roughness in terms of roughness improvement rate (RIR), and material removal rate (MRR). The achieved maximum RIR and MRR was 81.49% and 2.74mg/min, respectively. The finished workpieces were microscopically investigated by scanning electron microscopy (SEM) to further study the mechanism of MAF process.

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Study on Chemical Reactivity Control of Liquid Sodium: Development of Nano-Fluid and Its Property and Applicability to FBR Plant

Volume 1: Plant Operations, Maintenance, Installations and Life Cycle; Component Reliability and Materials Issues; Advanced Applications of Nuclear Technology; Codes, Standards, Licensing and Regulatory Issues ◽

10.1115/icone16-48367 ◽

2008 ◽

Author(s):

Jun-Ichi Saito ◽

Kuniaki Ara ◽

Ken-Ichiro Sugiyama ◽

Hiroshi Kitagawa ◽

Haruyuki Nakano ◽

...

Keyword(s):

Chemical Reactivity ◽

Nano Particles ◽

Liquid Sodium ◽

Atomic Interaction ◽

Nano Particle ◽

Fast Breeder Reactor ◽

Weak Point ◽

High Chemical ◽

Nano Fluid ◽

High Chemical Reactivity

Liquid sodium is used as the coolant of the fast breeder reactor (FBR). A weak point of sodium is a high chemical reactivity with water or oxygen. So an idea of chemical reactivity suppression of liquid sodium itself is proposed. The idea is that nano-meter size particles (hereafter called nano-particles) are dispersed in liquid sodium, and an atomic interaction which is generated between nano-particle and sodium atoms is applied to suppress the chemical reactivity. We call sodium that has dispersed the nano-particle a Nano-fluid. Three key technologies which are the trial manufacture of Nano-fluid, the reaction property of the Nano-fluid and applicability of Nano-fluid to FBR Plant have been carried out to develop the Nano-fluid.

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Wafer Scale Modeling and Control for Yield Improvement in Wafer Planarization

Microelectromechanical Systems ◽

10.1115/imece2002-33454 ◽

2002 ◽

Author(s):

Sutee Eamkajornsiri ◽

Ranga Narayanaswami ◽

Abhijit Chandra

Keyword(s):

Material Removal Rate ◽

Integrated Circuit ◽

Material Removal ◽

Large Scale ◽

Removal Rate ◽

Control Strategies ◽

Elastic Half Space ◽

Modeling And Control ◽

Planarization Process ◽

Curvature Control

Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during the fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. CMP consists of a chemical process and a mechanical process being performed together to reduce height variation across a wafer. High and reliable wafer yield, which is dependent upon uniformity of the material removal rate across the entire wafer, is of critical importance in the CMP process. In this paper, the variations in material removal rate (MRR) variation across the wafer are analytically modeled assumimg a rigid wafer and a flexible polishing pad. The wafer pad contact is modeled as the indentation of a rigid indenter on an elastic half-space. Load and curvature control strategies are investigated for improving the wafer yield. The notion of curvature control is entirely new and has not been addressed in the literature. The control strategy is based on minimizing a moment function that represents the wafer curvature and the height of the oxide layer left for material removal. Simulation results indicate that curvature control can improve wafer yield significantly, and is more effective than just the load control.

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