scholarly journals CuInSe2-Based Near-Infrared Photodetector

2021 ◽  
Vol 12 (1) ◽  
pp. 92
Author(s):  
Sung-Tae Kim ◽  
Ji-Seon Yoo ◽  
Min-Woo Lee ◽  
Ji-Won Jung ◽  
Jae-Hyung Jang

Near-infrared (NIR) photodetectors have interesting roles in optical fiber communications and biomedical applications. Conventional NIR photodetectors have been realized using InGaAs and Ge, of which the cut-off wavelengths exceed 1500 nm. Si-based photodetectors exhibit limited external quantum efficiency at wavelengths longer than 1000 nm. By synthesizing a CuInSe2 compound on a glass substrate, photodetectors that can detect optical wavelengths longer than 1100 nm have been realized in this study. The bandgap energies of the CuInSe2 thin films were tuned by varying the Cu/In ratio from 1.02 to 0.87. The longest cut-off wavelength (1309 nm) was obtained from a CuInSe2 thin film having a Cu/In ratio of 0.87. The responsivity of the photodiode was measured under the illumination of a 1064 nm laser light. The photo responses exhibited linear response up to 2.33 mW optical illumination and a responsivity of 0.60 A/W at −0.4 V.

2011 ◽  
Vol 99 (8) ◽  
pp. 081103 ◽  
Author(s):  
Ruo-Ping Chang ◽  
Dung-Ching Perng

Author(s):  
Antony Jan ◽  
Ramez Cheaito ◽  
Kenneth E. Goodson ◽  
Bruce M. Clemens

Dilute indium gallium arsenide nitrides (InxGa1-xAs1-yNy) are valuable in photonic applications as long wavelength emitters and for pairing with silica optical fibers for low attenuation optical fiber communications. The reliable operation of these devices is tied to a precise temperature control and the knowledge of the thermal properties of their components. However, the thermal conductivity of bulk or thin film InGaAsN of any composition are, to the best of our knowledge, not available in literature. In response, we use time-domain thermoreflectance (TDTR) to measure the thermal conductivity of a 78 nm In0.10Ga0.90As0.96N0.04 film grown by metalorganic chemical vapor deposition (MOCVD) on GaAs substrate. The thermal conductivity of In0.10Ga0.90As0.96N0.04 is found to be 6 +/− 0.5 Wm−1K−1, a factor of two lower than that of bulk In0.10Ga0.90As. To our knowledge this is the first reported thermal conductivity measurement on InGaAsN. We also present an analytical model for predicting the thermal conductivity of InGaAsN for any composition. Using this model, we find that the reduction in thermal conductivity can be attributed to the scattering of phonons by nitrogen impurities and boundary scattering of long mean free path phonons from the film thickness.


2017 ◽  
Vol 200 ◽  
pp. 10-13 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
K. Ibrahim ◽  
A. Hmood ◽  
Naser M. Ahmed ◽  
Falah I. Mustafa ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1380
Author(s):  
Marwa M. Tharwat ◽  
Ashwag Almalki ◽  
Amr M. Mahros

In this paper, a randomly distributed plasmonic aluminum nanoparticle array is introduced on the top surface of conventional GaAs thin-film solar cells to improve sunlight harvesting. The performance of such photovoltaic structures is determined through monitoring the modification of its absorbance due to changing its structural parameters. A single Al nanoparticle array is integrated over the antireflective layer to boost the absorption spectra in both visible and near-infra-red regimes. Furthermore, the planar density of the plasmonic layer is presented as a crucial parameter in studying and investigating the performance of the solar cells. Then, we have introduced a double Al nanoparticle array as an imperfection from the regular uniform single array as it has different size particles and various spatial distributions. The comparison of performances was established using the enhancement percentage in the absorption. The findings illustrate that the structural parameters of the reported solar cell, especially the planar density of the plasmonic layer, have significant impacts on tuning solar energy harvesting. Additionally, increasing the plasmonic planar density enhances the absorption in the visible region. On the other hand, the absorption in the near-infrared regime becomes worse, and vice versa.


2013 ◽  
Vol 543 ◽  
pp. 30-34 ◽  
Author(s):  
Aljona Ramonova ◽  
Tengiz Butkhuzi ◽  
Viktorija Abaeva ◽  
I.V. Tvauri ◽  
Soslan Khubezhov ◽  
...  

Laser-induced fragmentation and desorption of fragments of PTCDA films vacuum-deposited on GaAs (100) substrate has been studied by time-of-flight (TOF) mass spectroscopy. The main effect caused by pulsed laser light irradiation (pulse duration: 10 ns, photon energy: 2.34 eV and laser fluence ranging from 0.5 to 7 mJ/cm2) is PTCDA molecular fragmentation and desorption of the fragments formed, whereas no desorption of intact PTCDA molecule was detected. Fragments formed are perylene core C20H8, its half C10H4, carbon dioxide, carbon monoxide and atomic oxygen. All desorbing fragments have essentially different kinetic energy. The mechanism of photoinduced molecular fragmentation and desorption is discussed.


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