scholarly journals Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors

2019 ◽  
Vol 9 (18) ◽  
pp. 3677 ◽  
Author(s):  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
Infrared Photodetectors ◽  
Strong Light ◽  
Broadband Absorption ◽  
New Family ◽  
High Carrier Mobility ◽  
Light Matter Interaction ◽  
High Carrier ◽  
Schottky Junctions

In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

scholarly journals Silicon Meet Graphene for a New Family of Near-Infrared Schottky Photodetectors

2019 ◽  
Author(s):  
Maurizio Casalino
Keyword(s):  
Carrier Mobility ◽  
Near Infrared ◽  
Strong Light ◽  
Broadband Absorption ◽  
New Family ◽  
High Carrier Mobility ◽  
Light Matter Interaction ◽  
High Carrier ◽  
Schottky Junctions

In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

scholarly journals Near-Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials

2021 ◽  
Author(s):  
Teresa Crisci ◽  
Luigi Moretti ◽  
Mariano Gioffrè ◽  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
2D Materials ◽  
Active Material ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Broadband Absorption ◽  
Two Dimensional Materials ◽  
High Carrier Mobility ◽  
Light Matter Interaction ◽  
Silicon Based

Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.

Visible to near-infrared photodetectors based on MoS2vertical Schottky junctions

2017 ◽  
Vol 28 (48) ◽  
pp. 484002 ◽  
Author(s):  
Fan Gong ◽  
Hehai Fang ◽  
Peng Wang ◽  
Meng Su ◽  
Qing Li ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetectors ◽  
Schottky Junctions

Ultra-sensitive near-infrared graphene photodetectors with nanopillar antennas

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17459-17464 ◽  
Author(s):  
Yu Liu ◽  
Wen Huang ◽  
Tianxun Gong ◽  
Yue Su ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Carrier Mobility ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Broad Absorption ◽  
High Carrier Mobility ◽  
High Carrier

Graphene has been demonstrated as a candidate for optoelectronic devices due to its broad absorption spectrum and ultra-high carrier mobility.

scholarly journals Spectroscopic near-infrared photodetectors enabled by strong light–matter coupling in (6,5) single-walled carbon nanotubes

2020 ◽  
Vol 153 (20) ◽  
pp. 201104
Author(s):  
Andreas Mischok ◽  
Jan Lüttgens ◽  
Felix Berger ◽  
Sabina Hillebrandt ◽  
Francisco Tenopala-Carmona ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Near Infrared ◽  
Single Walled Carbon Nanotubes ◽  
Infrared Photodetectors ◽  
Strong Light ◽  
Single Walled Carbon ◽  
Matter Coupling ◽  
Walled Carbon Nanotubes

Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes

NANO ◽  
2016 ◽  
Vol 11 (07) ◽  
pp. 1650082 ◽  
Author(s):  
Yang Hang ◽  
Qi Li ◽  
Wei Luo ◽  
Yanlan He ◽  
Xueao Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Near Infrared ◽  
High Detection Rate ◽  
Infrared Wavelength ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Photo Response ◽  
Effect Transistor

The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] and a relatively high carrier mobility (1.79[Formula: see text]cm[Formula: see text]. The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity ([Formula: see text][Formula: see text]mA/W), quick response time ([Formula: see text][Formula: see text]ms), high external quantum efficiency ([Formula: see text] and high detection rate ([Formula: see text] for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.

scholarly journals 2D GeP-based photonic device for near-infrared and mid-infrared ultrafast photonics

Nanophotonics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 3645-3654
Author(s):  
Zhenhong Wang ◽  
Jia Guo ◽  
Yue Zhang ◽  
Jun Liu ◽  
Joice Sophia Ponraj ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Near Infrared ◽  
Ultrashort Pulses ◽  
Rogue Waves ◽  
Photonic Devices ◽  
Strong Light ◽  
Mid Infrared ◽  
Near Ir ◽  
Light Matter Interaction ◽  
Ultrafast Photonics

AbstractGermanium phosphide (GeP), a rising star of novel two-dimensional (2D) material composed of Group IV–V elements, has been extensively studied and applied in photonics thanks to its broadband optical absorption, strong light–matter interaction and flexible bandgap structure. Here, we show the strong nonlinear optical (NLO) properties of 2D GeP nanoflakes in the broadband range with open-aperture Z-scan technique to explore the performance of 2D GeP microfiber photonic devices (GMPDs) in near-infrared (near-IR) and mid-infrared (mid-IR) ultrafast photonics. Our results suggest that employing the GMPD as an optical device in an erbium-doped fiber laser (EDFL) system results in ultrashort pulses and rogue waves (RWs) at 1.55 μm. Likewise, by the incorporation of GMPD into a thulium-doped fiber laser (TDFL) system, stable ultrashort pulse operation is also achieved at 2.0 μm. We expect these findings to be an excellent GMPD that can be applied in mode-locked fiber lasers to open up new avenues for its development and application in ultrafast photonics.

scholarly journals Review of Polarization Optical Devices Based on Graphene Materials

2020 ◽  
Vol 21 (5) ◽  
pp. 1608 ◽  
Author(s):  
Shijie Zhang ◽  
Zongwen Li ◽  
Fei Xing
Keyword(s):  
Response Spectrum ◽  
Optical Devices ◽  
Polarization Dependence ◽  
Research Progress ◽  
Absorption Enhancement ◽  
Broadband Absorption ◽  
Polarization Characteristics ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Silicon Based

Graphene has received extensive scholarly attention for its extraordinary optical, electrical, and physicochemical properties, as well as its compatibility with silicon-based semiconductor processes. As a unique two-dimensional atomic crystal material, graphene has excellent mechanical properties, ultra-high carrier mobility, ultra-wide optical response spectrum, and strong polarization dependence effect, which make it have great potential in new optical and polarization devices. A series of new optical devices that are based on graphene have been developed, showing excellent performance and broad application prospects. In this paper, the recent research progress of polarizers, sensors, modulators, and detectors that are based on the polarization characteristics of graphene is reviewed. In particular, the polarization dependence effect and broadband absorption enhancement of graphene under total reflection structure are emphasized, which enhance the interaction between graphene and light and then provide a new direction for research of graphene polarization devices.

scholarly journals Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz

Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 317-325 ◽  
Author(s):  
Yunhong Ding ◽  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Kresten Yvind ◽  
Jianji Dong ◽  
...  
Keyword(s):  
High Speed ◽  
Electronic Band Structure ◽  
Rapid Development ◽  
Silicon On Insulator ◽  
Electronic Band ◽  
Broadband Absorption ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Small Footprint ◽  
Weak Light

AbstractGraphene-based photodetectors, taking advantage of the high carrier mobility and broadband absorption in graphene, have recently seen rapid development. However, their performance with respect to responsivity and bandwidth is still limited by the weak light-graphene interaction and large resistance-capacitance product. Here, we demonstrate a waveguide-coupled integrated graphene plasmonic photodetector on a silicon-on-insulator platform. Benefiting from plasmon-enhanced graphene-light interaction and subwavelength confinement of the optical energy, a small-footprint graphene-plasmonic photodetector is achieved working at the telecommunication window, with a large a bandwidth beyond 110 GHz and a high intrinsic responsivity of 360 mA/W. Attributed to the unique electronic band structure of graphene and its ultra-broadband absorption, operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact, high-speed optoelectronic devices for graphene-based optical interconnects.

scholarly journals Transient exciton-polariton dynamics in WSe2by ultrafast near-field imaging

2019 ◽  
Vol 5 (2) ◽  
pp. eaat9618 ◽  
Author(s):  
M. Mrejen ◽  
L. Yadgarov ◽  
A. Levanon ◽  
H. Suchowski
Keyword(s):  
Room Temperature ◽  
Near Infrared ◽  
Coherent Control ◽  
Near Field ◽  
Imaging Method ◽  
Strong Light ◽  
Pump Probe ◽  
Near Field Imaging ◽  
Light Matter Interaction ◽  
Field Imaging

Van der Waals (vdW) materials offer an exciting platform for strong light-matter interaction enabled by their polaritonic modes and the associated deep subwavelength light confinement. Semiconductor vdW materials such as WSe2are of particular interest for photonic and quantum integrated technologies because they sustain visible–near-infrared (VIS-NIR) exciton-polariton (EP) modes at room temperature. Here, we develop a unique spatiotemporal imaging technique at the femtosecond-nanometric scale and observe the EP dynamics in WSe2waveguides. Our method, based on a novel ultrafast broadband intrapulse pump-probe near-field imaging, allows direct visualization of EP formation and propagation in WSe2showing, at room temperature, ultraslow EP with a group velocity ofvg~ 0.017c. Our imaging method paves the way for in situ ultrafast coherent control and extreme spatiotemporal imaging of condensed matter.

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