scholarly journals Strain-Dependent Resistivity of Granular Manganite Systems: A Simple Quantitative Approach

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1081
Author(s):  
Pasquale De Feo ◽  
Fabrizio Ferraioli ◽  
Nunzia Coppola ◽  
Luigi Maritato
Keyword(s):  
Electrical Resistivity ◽  
Tilt Angle ◽  
Strain Tensor ◽  
Small Deformation ◽  
Simple Approach ◽  
Applied Strain ◽  
Quantitative Approach ◽  
Granular System ◽  
Metallic Part ◽  
Strain Dependent

The effects of an applied strain tensor on the electrical resistivity of a manganite granular system are investigated using a simple approach describing the induced deformation in terms of the tilt angle between adjacent grains. The results obtained assuming the resistivity of each grain as given by a metallic part, coming from the inner grain, and a surface-related tunnel contribution, allow us to estimate appreciable resistivity variations even in the case of small deformation angles.

scholarly journals Strain Dependent Resistivity of Granular Manganite Systems: a Simple Quantitative Approach

2020 ◽  
Author(s):  
Pasquale De Feo ◽  
Fabrizio Ferraioli ◽  
Nunzia Coppola ◽  
Luigi Maritato
Keyword(s):  
Electrical Resistivity ◽  
Tilt Angle ◽  
Strain Tensor ◽  
Small Deformation ◽  
Simple Approach ◽  
Quantitative Approach ◽  
Granular System ◽  
Metallic Part ◽  
Strain Dependent ◽  
External Strain

The effects of an external strain tensor on the electrical resistivity of a manganite granular system are investigated using a simple approach describing the induced deformation in terms of the tilt angle between adjacent grains. The results obtained assuming the resistivity of each grain as given by a metallic part, coming from the inner grain, and a surface related tunnel contribution, allow to estimate appreciable resistivity variations even in the case of small deformation angles.

Investigation of strain localization in sheared granular material using 3D numerical discrete element model

2021 ◽  
Author(s):  
Chien-Cheng Hung ◽  
Andre Niemeijer ◽  
Amir Raoof ◽  
Thomas Swijen
Keyword(s):  
Grain Size ◽  
Particle Motion ◽  
Contrast Ratio ◽  
Strain Tensor ◽  
Discrete Element ◽  
Contact Forces ◽  
Spherical Particles ◽  
Frictional Heat ◽  
Granular System ◽  
Seismic Velocities

<p>We used three-dimensional numerical simulations of the discrete element method (DEM) to investigate slip localization in sheared granular faults under seismic velocities. An aggregate of non-destructive spherical particles with assigned contact properties is subjected to direct shear with periodic boundary in horizontal directions. To investigate whether particle size distribution (PSD) influences slip accommodation, three distinct PSDs, namely Gaussian, log-normal, and power-law with fractal dimension D ranging from 0.8 to 2.6, are employed. In additional simulations, we impose a thin layer of particles with smaller grain size along the boundary as well as in the middle of the granular assemblages to simulate boundary and Y shears occurring in both natural and laboratory fault gouges. Transient microscopic properties, such as particle motion and contact forces, as well as macroscopic properties, such as friction, of the granular layer, are continuously monitored during numerical shearing. Results show that no visible slip localization is observed for all different PSDs based on the current particle motion analysis. On the other hand, we find that much more strain (i.e., displacement) is accommodated in the finer-grained layer even with a small contrast in grain size. Up to 90 % of the displacement is localized in a finer-grained layer when the contrast ratio of the grain size is 50 %. Since more frictional heat will be generated in the localized slip zone, the results provide crucial information on the heat generation and associated slip accommodation in sheared gouge zones. A possible mechanism of slip localization in the simulations is the transfer of the momentum across the granular system. We conclude that the occurrence of a weaker, fine-grained layer within a dense fault zone is likely to result in self-enhanced weakening of the fault planes.  Ongoing work includes (1) varying the thickness, grain size, and internal friction of the thinner layer; (2) applying triangulation methods to further analyze the microscale stress and strain tensor between particles; (3) changing the rolling friction of particles.</p>

A Simple Approach to Calculation of the Phonon-Limited Electrical Resistivity in Metals

1982 ◽  
Vol 112 (1) ◽  
pp. 29-33 ◽  
Author(s):  
I. I. Mazin ◽  
E. M. Savitskii ◽  
Yu. A. Uspenskii
Keyword(s):  
Electrical Resistivity ◽  
Simple Approach

The dislocation structure of a 10° [110] tilt boundary in silicon

1983 ◽  
Vol 41 ◽  
pp. 114-115
Author(s):  
B. Cunningham ◽  
D.G. Ast
Keyword(s):  
Dislocation Structure ◽  
Tilt Angle ◽  
Imaging Technique ◽  
Diamond Lattice ◽  
Tilt Boundary ◽  
Formation Mechanisms ◽  
Diffraction Contrast ◽  
Lattice Fringe ◽  
Tilt Boundaries ◽  
Chemically Vapor Deposited

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.

A High Angle, Double Tilting Cold Stage for the AEI EM7

1974 ◽  
Vol 32 ◽  
pp. 450-451
Author(s):  
P.R. Swann ◽  
A.E. Lloyd
Keyword(s):  
Habit Plane ◽  
Temperature Control ◽  
Tilt Angle ◽  
Cooling System ◽  
Thermal Drift ◽  
High Angle ◽  
Cold Stage ◽  
High Degree ◽  
Better Than

Figure 1 shows the design of a specimen stage used for the in situ observation of phase transformations in the temperature range between ambient and −160°C. The design has the following features a high degree of specimen stability during tilting linear tilt actuation about two orthogonal axes for accurate control of tilt angle read-out high angle tilt range for stereo work and habit plane determination simple, robust construction temperature control of better than ±0.5°C minimum thermal drift and transmission of vibration from the cooling system.

Influence of X-Ray Induced Fluorescence on Energy Dispersive X-Ray Analysis of Thin Foils

1977 ◽  
Vol 35 ◽  
pp. 328-329
Author(s):  
E. A. Kenik ◽  
J. Bentley
Keyword(s):  
Thin Foil ◽  
Electron Excitation ◽  
Simple Approach ◽  
Foil Thickness ◽  
X Rays ◽  
X Ray ◽  
Hole Spectrum ◽  
Illumination System ◽  
Thin Foils ◽  
Intensity Ratios

Cliff and Lorimer (1) have proposed a simple approach to thin foil x-ray analy sis based on the ratio of x-ray peak intensities. However, there are several experimental pitfalls which must be recognized in obtaining the desired x-ray intensities. Undesirable x-ray induced fluorescence of the specimen can result from various mechanisms and leads to x-ray intensities not characteristic of electron excitation and further results in incorrect intensity ratios.In measuring the x-ray intensity ratio for NiAl as a function of foil thickness, Zaluzec and Fraser (2) found the ratio was not constant for thicknesses where absorption could be neglected. They demonstrated that this effect originated from x-ray induced fluorescence by blocking the beam with lead foil. The primary x-rays arise in the illumination system and result in varying intensity ratios and a finite x-ray spectrum even when the specimen is not intercepting the electron beam, an ‘in-hole’ spectrum. We have developed a second technique for detecting x-ray induced fluorescence based on the magnitude of the ‘in-hole’ spectrum with different filament emission currents and condenser apertures.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

The use of a Bent Grid to Improve the take-Off Angle for Electron Probe Analysis

1976 ◽  
Vol 34 ◽  
pp. 360-361
Author(s):  
Delbert E. Philpott ◽  
David Leaffer
Keyword(s):  
Quantitative Analysis ◽  
Tilt Angle ◽  
Count Rate ◽  
Electron Probe ◽  
Open Area ◽  
Electron Probe Analysis ◽  
Background Ratio ◽  
Probe Analysis

There are certain advantages for electron probe analysis if the sample can be tilted directly towards the detector. The count rate is higher, it optimizes the geometry since only one angle need be taken into account for quantitative analysis and the signal to background ratio is improved. The need for less tilt angle may be an advantage because the grid bars are not moved quite as close to each other, leaving a little more open area for observation. Our present detector (EDAX) and microscope (Philips 300) combination precludes moving the detector behind the microscope where it would point directly at the grid. Therefore, the angle of the specimen was changed in order to optimize the geometry between the specimen and the detector.

Methods for three-dimensional reconstruction of cellular components within a thick section

1986 ◽  
Vol 44 ◽  
pp. 18-21
Author(s):  
J. Frank ◽  
B. F. McEwen ◽  
M. Radermacher ◽  
C. L. Rieder
Keyword(s):  
Tilt Angle ◽  
Tomographic Reconstruction ◽  
3D Structure ◽  
Three Dimensional ◽  
Thick Section ◽  
Three Dimensional Reconstruction ◽  
Axis Ratio ◽  
Dimensional Reconstruction ◽  
Cellular Components

The tomographic reconstruction from multiple projections of cellular components, within a thick section, offers a way of visualizing and quantifying their three-dimensional (3D) structure. However, asymmetric objects require as many views from the widest tilt range as possible; otherwise the reconstruction may be uninterpretable. Even if not for geometric obstructions, the increasing pathway of electrons, as the tilt angle is increased, poses the ultimate upper limitation to the projection range. With the maximum tilt angle being fixed, the only way to improve the faithfulness of the reconstruction is by changing the mode of the tilting from single-axis to conical; a point within the object projected with a tilt angle of 60° and a full 360° azimuthal range is then reconstructed as a slightly elliptic (axis ratio 1.2 : 1) sphere.

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