Tunability Investigation in the BaTiO3-CaTiO3-BaZrO3 Phase Diagram Using a Refined Combinatorial Thin Film Approach

Tunable ferroelectric capacitors, which exhibit a decrease in the dielectric permittivity under an electric field, are widely used in electronics for RF tunable applications. Current devices use barium strontium titanate (BST) as the tunable dielectric, but new applications call for tunable materials with specific performance improvements. It is then of crucial importance to dispose of a large panel of electrically characterized materials to identify the most suited compound for a given set of device specifications. Here, we report on the dielectric tuning properties of Ba1−xCaxTi1−yZryO3 (BCTZ) thin films libraries (0 ≤ x ≤ 30% and 0 ≤ y ≤ 28.5%) synthesized by combinatorial pulsed laser deposition (CPLD). An original CPLD approach allowing reliable and statistical ternary phase diagrams exploration is reported. The effects of Ca and Zr content on tunability, breakdown voltage and dielectric losses are explicated and shown to be beneficial up to a certain amount. Compounds close to (Ba0.84Ca0.16)(Ti0.8Zr0.2)O3 exhibit the highest figures of merit, while a zone with compositions around (Ba0.91Ca0.09)(Ti0.81Zr0.19)O3 show the best compromise between tuning ratio and figure of merit. These results highlight the potential of BCTZ thin films for electrically tunable applications.

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Stability of As and B doped Si with respect to overlaying CoSi2 and TiSi2 thin films

Journal of Materials Research ◽

10.1557/jmr.1989.1209 ◽

1989 ◽

Vol 4 (5) ◽

pp. 1209-1217 ◽

Cited By ~ 62

Author(s):

K. Maex ◽

G. Ghosh ◽

L. Delaey ◽

V. Probst ◽

P. Lippens ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Diagrams ◽

Thermodynamic Data ◽

Ternary Phase ◽

Experimental Results ◽

Silicide Formation ◽

Isothermal Sections ◽

Ternary Phase Diagrams ◽

The Stability

The thermodynamic equilibrium of structures consisting of a thin film silicide (TiSi2 or CoSi2) on doped Si (with As or B) is investigated. Isothermal sections of the ternary phase diagrams for Ti–Si–B, Co–Si–B, Ti–Si–As, and Co–Si–As have been evaluated, indicating the stability of high B concentrations in Si underneath a CoSi2 layer, the instability of high As concentrations in Si underneath a CoSi2 layer, and of B and As concentrations underneath a TiSi2 layer. The obtained thermodynamic predictions agree very well with experimental results (i) on the redistribution of dopants during silicide formation, (ii) on the diffusion of dopants from an ion implanted silicide, and (iii) on the stability of highly doped regions underneath the silicide, both for the case of TiSi2 and CoSi2. It is shown that even though the inaccuracy of reported thermodynamic data is substantial, thermodynamic calculations provide a useful guidance and are consistent with the experimental results.

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Effect of a Third Element on the Stability of NiSi Thin Films on Si

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.249.127 ◽

2006 ◽

Vol 249 ◽

pp. 127-134 ◽

Cited By ~ 7

Author(s):

Dominique Mangelinck

Keyword(s):

Thin Films ◽

Thermal Stability ◽

Phase Diagrams ◽

High Temperatures ◽

Driving Force ◽

Ternary Phase ◽

The Third ◽

Ternary Phase Diagrams ◽

The Stability ◽

Thermal Stability Of

The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900oC leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.

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The use of acoustic spectroscopy in the characterisation of ternary phase diagrams

International Journal of Pharmaceutics ◽

10.1016/j.ijpharm.2012.10.037 ◽

2013 ◽

Vol 441 (1-2) ◽

pp. 603-610 ◽

Cited By ~ 4

Author(s):

Giulia Bonacucina ◽

Marco Cespi ◽

Giovanna Mencarelli ◽

Luca Casettari ◽

Giovanni F. Palmieri

Keyword(s):

Phase Diagrams ◽

Ternary Phase ◽

Ternary Phase Diagrams ◽

Acoustic Spectroscopy

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Characterization of alcohol-containing dairy emulsions: Pseudo-ternary phase diagrams of sodium caseinate solution-oil-ethanol systems

Food Research International ◽

10.1016/j.foodres.2013.03.006 ◽

2013 ◽

Vol 53 (1) ◽

pp. 49-55 ◽

Cited By ~ 6

Author(s):

G.P. Espinosa ◽

M.G. Scanlon

Keyword(s):

Phase Diagrams ◽

Ternary Phase ◽

Sodium Caseinate ◽

Ternary Phase Diagrams

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Effect of short-chain alcohols as co-surfactants on pseudo-ternary phase diagrams containing lecithin

Korean Journal of Chemical Engineering ◽

10.1007/bf02707128 ◽

1999 ◽

Vol 16 (3) ◽

pp. 377-381 ◽

Cited By ~ 17

Author(s):

Suk-Young Choi ◽

Seong-Geun Oh ◽

Seong-Youl Bae ◽

Sei-Ki Moon

Keyword(s):

Phase Diagrams ◽

Ternary Phase ◽

Short Chain ◽

Ternary Phase Diagrams

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Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films

Journal of Materials Research ◽

10.1557/jmr.2002.0239 ◽

2002 ◽

Vol 17 (7) ◽

pp. 1612-1621 ◽

Cited By ~ 84

Author(s):

M. Li ◽

F. Zhang ◽

W. T. Chen ◽

K. Zeng ◽

K. N. Tu ◽

...

Keyword(s):

Thin Films ◽

Phase Diagram ◽

Solid State ◽

Brittle Failure ◽

Ternary Phase ◽

Interfacial Microstructure ◽

Snagcu Solder ◽

Ball Shear ◽

Aging Study ◽

Eutectic Snpb

The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.

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Determining the Nitrogen Content in (Oxy)Nitride Materials

Materials ◽

10.3390/ma11081331 ◽

2018 ◽

Vol 11 (8) ◽

pp. 1331 ◽

Cited By ~ 8

Author(s):

Franck Tessier

Keyword(s):

Thin Films ◽

Nitrogen Content ◽

Electron Probe Microanalysis ◽

Electron Probe ◽

Extraction Techniques ◽

Bulk Materials ◽

Wavelength Dispersive Spectroscopy ◽

Oxygen Determination ◽

Carrier Gas Hot Extraction ◽

Large Panel

Nitrogen (and also oxygen) determination has become an important parameter to characterize (oxy)nitride materials for many properties and applications. Analyzing such anions with accuracy is still a challenge for some materials. However, to date, a large panel of methodologies is available to answer this issue with relevant results, even for thin films. Carrier gas hot extraction techniques and electron probe microanalysis with wavelength dispersive spectroscopy (EPMA-WDS) look attractive to analyze bulk materials and thin films, respectively. This paper gathers several techniques using chemical and physical routes to access such anionic contents. Limitations and problems are pointed out for both powders and films.

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