Tunability Investigation in the BaTiO3-CaTiO3-BaZrO3 Phase Diagram Using a Refined Combinatorial Thin Film Approach

Tunable ferroelectric capacitors, which exhibit a decrease in the dielectric permittivity under an electric field, are widely used in electronics for RF tunable applications. Current devices use barium strontium titanate (BST) as the tunable dielectric, but new applications call for tunable materials with specific performance improvements. It is then of crucial importance to dispose of a large panel of electrically characterized materials to identify the most suited compound for a given set of device specifications. Here, we report on the dielectric tuning properties of Ba1−xCaxTi1−yZryO3 (BCTZ) thin films libraries (0 ≤ x ≤ 30% and 0 ≤ y ≤ 28.5%) synthesized by combinatorial pulsed laser deposition (CPLD). An original CPLD approach allowing reliable and statistical ternary phase diagrams exploration is reported. The effects of Ca and Zr content on tunability, breakdown voltage and dielectric losses are explicated and shown to be beneficial up to a certain amount. Compounds close to (Ba0.84Ca0.16)(Ti0.8Zr0.2)O3 exhibit the highest figures of merit, while a zone with compositions around (Ba0.91Ca0.09)(Ti0.81Zr0.19)O3 show the best compromise between tuning ratio and figure of merit. These results highlight the potential of BCTZ thin films for electrically tunable applications.

Silicene Quantum Capacitance Dependent Frequency Readout to a Label-Free Detection of DNA Hybridization— A Simulation Analysis

The use of deoxyribonucleic acid (DNA) hybridization to detect disease-related gene expression is a valuable diagnostic tool. An ion-sensitive field-effect transistor (ISFET) with a graphene layer has been utilized for detecting DNA hybridization. Silicene is a two-dimensional silicon allotrope with structural properties similar to graphene. Thus, it has recently experienced intensive scientific research interest due to its unique electrical, mechanical, and sensing characteristics. In this paper, we proposed an ISFET structure with silicene and electrolyte layers for the label-free detection of DNA hybridization. When DNA hybridization occurs, it changes the ion concentration in the surface layer of the silicene and the pH level of the electrolyte solution. The process also changes the quantum capacitance of the silicene layer and the electrical properties of the ISFET device. The quantum capacitance and the corresponding resonant frequency readout of the silicene and graphene are compared. The performance evaluation found that the changes in quantum capacitance, resonant frequency, and tuning ratio indicate that the sensitivity of silicene is much more effective than graphene.

Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor

Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. However, the on/off ratio and photoresponsivity of graphene are typically low. Transition metal dichalcogenides (e.g., MoSe2) are semiconductors with high photoresponsivity but lower mobility than that of graphene. Here, we propose a graphene/MoSe2 barristor with a high-k ion-gel gate dielectric. It shows a high on/off ratio (3.3 × 104) and ambipolar behavior that is controlled by an external bias. The barristor exhibits very high external quantum efficiency (EQE, 66.3%) and photoresponsivity (285.0 mA/W). We demonstrate that an electric field applied to the gate electrode substantially modulates the photocurrent of the barristor, resulting in a high gate tuning ratio (1.50 μA/V). Therefore, this barristor shows potential for use as an ambipolar transistor with a high on/off ratio and a gate-tunable photodetector with a high EQE and responsivity.

Fabrication and Characterization of Ferrofluidic-Based Wire-Wound and Wire-Bonded Type Inductor for Continuous RF Tunable Inductor

This paper reports on the novel implementation of a tunable solenoid inductor using the fluid-based inductance varying technique. The concept utilized material permeability variation that directly modifies self-induced magnetic flow density inside the coil, which in turn creates a variation of the inductance value. The core is formed by a channel which allows the circulation of a liquid through it. The liquid proposed for this technique has ferromagnetic behavior, called ferrofluid, with a magnetic permeability higher than unity. To evaluate the proposed technique, two different types of solenoid inductor were designed, simulated and measured. The two structures are wire-wound and wire bond solenoid inductors. The structures are simulated in a 3D EM analysis tool followed by fabrication, test and measurement. The wire-bonded-based inductor showed a quality factor of 12.7 at 310 MHz, with 81% tuning ratio, by using ferrofluid EMG 901. The wire-wound-based inductor showed that the maximum tuning ratio is 90.6% with quality factor 31.3 at 300 MHz for ferro fluidic EMG 901. The maximum measured tuning ranges were equal to 83.5% and 56.2% for the wire-wound type and the wire-bonded one, respectively. The measurement results for the proposed technique showed a very high tuning range, as well as high quality factor and continuous tunability.