scholarly journals Influence of the Sputtering Technique and Thermal Annealing on YSZ Thin Films for Oxygen Sensing Applications

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1165
Author(s):  
Emilio Paz Alpuche ◽  
Pascal Gröger ◽  
Xuetao Wang ◽  
Thomas Kroyer ◽  
Stefanos Fasoulas

Yttria-stabilized zirconia (YSZ) thin films were deposited using direct current (reactive and metallic) and radio frequency magnetron sputtering. The effect of the deposition technique and annealing treatment on the microstructure and crystallinity of the thin films was assessed. Using the films produced in this work, oxygen gas sensors were built and their performance under vacuum conditions was evaluated. All the films exhibited a cubic crystalline structure after a post-deposition thermal treatment, regardless of the sputtering technique. When the annealing treatment surpassed 1000 °C, impurities were detected on the thin film surface. The oxygen gas sensors employing the reactive and oxide-sputtered YSZ thin films displayed a proportional increase in the sensor current as the oxygen partial pressure was increased in the evaluated pressure range (5 × 10−6 to 2 × 10−3 mbar). The sensors which employed the metallic-deposited YSZ films suffered from electronic conductivity at low partial pressures.

10.14311/1767 ◽  
2013 ◽  
Vol 53 (2) ◽  
Author(s):  
Jan Píchal ◽  
Julia Klenko

Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD). We used the plasma enhanced chemical vapour deposition (PECVD) method applying atmospheric dielectric barrier discharge (ADBD) plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP) and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA). The film morphology was tested by atomic force microscopy (AFM). The thickness of the thin films varied in the range of (80 ÷ 210) nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.


2019 ◽  
Vol 27 (04) ◽  
pp. 1950133
Author(s):  
RAHIMA NASRIN ◽  
HUMAYUN KABIR ◽  
A. H. BHUIYAN

In order to understand the variation of surface morphology and optical properties due to modification, an attempt has been made to synthesize iodine-doped n-butyl methacrylate thin films through plasma polymerization technique. Field emission scanning electron microscope images displayed that the surface of the modified plasma polymerized n-butyl methacrylate (PPnBMA) thin films became smooth after iodine doping. Atomic force microscopic analysis reveals that with increasing doping time from 0[Formula: see text]min to 60[Formula: see text]min the surface root-mean-square roughness value is decreased from 0.68[Formula: see text]nm to 0.51[Formula: see text]nm, which suggests that roughness of the PPnBMA thin film surface quite improved due to iodine doping. UV-Vis absorption spectroscopic analyses exhibited that iodine doping noticeably decreased both the direct and indirect energy bandgap values of PPnBMA thin film. The effect of doping by iodine on absorption coefficient, extinction coefficient, etc. of these thin films have been also discussed.


2001 ◽  
Vol 19 (3) ◽  
pp. 904-909 ◽  
Author(s):  
Yongxiang Li ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski ◽  
Muralihdar Ghantasala ◽  
Salvy Russo ◽  
...  

2013 ◽  
Vol 789 ◽  
pp. 105-111 ◽  
Author(s):  
Didier Fasquelle ◽  
S. Députier ◽  
M. Mascot ◽  
N. Uschanoff ◽  
V. Bouquet ◽  
...  

In view to develop gas sensors, a first generation of lead-free thin films was deposited by different techniques on commercial Si and Al2O3 substrates. During our research project, the correlation between the micro structure of films, the structure of the embedded sensors and the applied temperature range, is being studied. In the first year, doped and undoped BaTiO3, KNbO3 and ZnO thin films have been deposited by sol-gel and PLD techniques. BT and BST films have shown a polycrystalline structure with very fine and regular grains, while disoriented grains with an average size ranging from 50 to 200 nm were observed on the KNbO3 film surface, and ZnO films exhibited a columnar growth. All films were characterized and finally embedded to make semiconductor gas sensors which have been tested under different gases. In this first generation of sensors, ZnO sensors have shown encouraging preliminary results under CO and H2S gases. Keywords : thin films, lead-free oxide, sensor, gas.


2021 ◽  
Author(s):  
Vadali Venkata Satya Siva Srikanth

Diamond thin films are touted to be excellent in surface-sensitive sensing, electro-mechanical systems, and electrochemical applications. However, these applications often entail patterned active surfaces and subtle chemical surface modifications. But due to diamond’s intrinsic hardness and chemical inertness, surface patterning (using micro-machining and ion etching) and chemical surface modifications, respectively, are very difficult. In the case of surface patterning, it is even more challenging to obtain patterns during synthesis. In this chapter, the direct patterning of sub-wavelength features on diamond thin film surface using a femtosecond laser, rapid thermal annealing as a means to prepare the diamond thin film surface as an efficient direct charge transfer SERS substrate (in metal/insulator/semiconductor (MIS) configuration), and implantation of 14N+ ions into the surface and sub-surface regions for enhancing the electrical conductivity of diamond thin film to a certain depth (in MIS configuration) will be discussed encompassing the processing strategies and different post-processing characteristics.


1991 ◽  
Vol 4 (3-4) ◽  
pp. 393-399 ◽  
Author(s):  
H.-J. Beie ◽  
A. Gnörich
Keyword(s):  

2011 ◽  
Vol 486 ◽  
pp. 127-130
Author(s):  
Chao Cheng Chang

This study used molecular dynamics simulations with an embedded-atom method (EAM) potential to investigate the effect of surface roughness on the surface activated bonding (SAB) of aluminium thin films. The simulations started with the bonding process and followed by the tensile test for estimating bonding strength. By averaging the atomic stresses over the entire system, the stress-time curves for the bonded films under a tensile condition were predicted. Moreover, the evolution of the crystal structure in the local atomic order was examined by the common neighbour analysis. The simulated results show that the decrease in the surface roughness of thin film improves the bonding strength. The observed recrystallization processes inside the bonded thin films also reveal that the plastic deformation of the aluminium surface due to atomic attracting force compensates surface roughness.


2007 ◽  
Vol 101 (1) ◽  
pp. 014107 ◽  
Author(s):  
Baishun Zhang ◽  
Zuci Quan ◽  
Tianjin Zhang ◽  
Tao Guo ◽  
Shaobo Mo

2016 ◽  
Vol 45 (8) ◽  
pp. 4100-4107 ◽  
Author(s):  
L. Arunraja ◽  
P. Thirumoorthy ◽  
A. Karthik ◽  
V. Rajendran ◽  
L. Edwinpaul

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.


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