scholarly journals Electrodeposition of Cu-Ag Alloy Films at n-Si(001) and Polycrystalline Ru Substrates

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1563
Author(s):  
Wenbo Shao ◽  
Yunkai Sun ◽  
Giovanni Zangari
Keyword(s):  
Classical Model ◽  
Si Substrate ◽  
Nucleation Kinetics ◽  
Sulfate Bath ◽  
Acidic Sulfate ◽  
Incomplete Coverage ◽  
Nucleation Overpotential ◽  
Acidic Sulfate Bath ◽  
Ag Film ◽  
Potentiostatic Transients

Electrodeposition of Cu-Ag films from acidic sulfate bath was conducted at n-Si(001) and polycrystalline Ru substrates. Significant nucleation overpotential of 0.4 V is observed with the Cu-Ag bath at n-Si(001) substrate, whereas the electrodeposition of Cu-Ag at Ru substrate is influenced by Ru oxides at the surface. Incomplete coverage of Si substrate by Cu-Ag deposit was observed from the deposition systems without Ag(I), or with 0.1 mM Ag(I), comparing with the compact Cu-Ag film obtained with the deposition bath containing 0.01 mM Ag(I). Layered and faceted Cu-Ag deposit was observed at small Cu deposition overpotential with the Ru substrate. Phase composition of the Cu-Ag deposits at n-Si(001) substrate from electrolyte with various Ag(I) concentrations is examined by XRD. Limited solubility of Ag (0.4 at.%) was observed in fcc-Cu until phase separation occurs. The classical model for nucleation kinetics in electrodeposition was used to examine the potentiostatic transients of the Cu-Ag electrodeposition at n-Si(001) substrate.

Removal of Chloride Ion from Acidic Sulfate Bath by Electrolytic Oxidation.

1993 ◽  
Vol 109 (10) ◽  
pp. 791-795 ◽  
Author(s):  
Noboru MASUKO ◽  
Katsuhiko MUSHIAKE ◽  
Kazuo KOIKE
Keyword(s):  
Chloride Ion ◽  
Sulfate Bath ◽  
Electrolytic Oxidation ◽  
Acidic Sulfate ◽  
Acidic Sulfate Bath

scholarly journals Effects of Added Chloride Ion on Electrodeposition of Copper from a Simulated Acidic Sulfate Bath Containing Cobalt Ions

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Bijayalaxmi Panda
Keyword(s):  
Oxygen Evolution ◽  
Chloride Ion ◽  
Ion Concentration ◽  
Anodic Process ◽  
Copper Electrodeposition ◽  
Cobalt Ions ◽  
Sulfate Bath ◽  
Acidic Sulfate ◽  
Current Densities ◽  
Acidic Sulfate Bath

The effects of added chloride ion on copper electrodeposition was studied using Pb-Sb anode and a stainless steel cathode in an acidic sulfate bath containing added Co2+ ion. The presence of added chloride ion in the electrolyte solution containing 150 ppm of Co2+ ion was found to increase the anode and the cell potentials and decrease the cathode potential. Linear sweep voltammetry (LSV) was used to study the effects of added chloride ion on the anodic process during the electrodeposition of copper in the presence of added  ppm; the oxygen evolution potential is polarised by adding 10 ppm chloride ion at current densities (≥150 A/m2), and further increase in chloride ion concentration increases the polarisation of oxygen evolution reaction more at higher current densities. X-ray diffraction (XRD) showed that added chloride ion and added Co2+ ion changed the preferred crystal orientations of the copper deposits differently. Scanning electron microscopy (SEM) indicated that the surface morphology of the copper deposited in the presence of added chloride ion and added Co2+ ion has well-defined grains.

Estimating electrodeposition properties and processes: Cu-Ag alloy at n-Si(001) and Ru substrates from acidic sulfate bath

2021 ◽  
pp. 139695
Author(s):  
Wenbo Shao ◽  
Yunkai Sun ◽  
Walter Giurlani ◽  
Massimo Innocenti ◽  
Giovanni Zangari
Keyword(s):  
Sulfate Bath ◽  
Acidic Sulfate ◽  
Acidic Sulfate Bath

Irregular Resistance Change in Thin Ag Film on Si Substrate

2001 ◽  
Vol 40 (Part 2, No. 6B) ◽  
pp. L618-L620 ◽  
Author(s):  
Shoji Iida ◽  
Akihiko Hiraoka ◽  
Toshiaki Tai ◽  
Hideaki Noritake
Keyword(s):  
Si Substrate ◽  
Resistance Change ◽  
Ag Film

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

AEM analysis of solidification catalysts in atomized Fe-Ni

1986 ◽  
Vol 44 ◽  
pp. 584-585
Author(s):  
Matthew R. Libera
Keyword(s):  
Powder Particle ◽  
Alloy Composition ◽  
Particle Diameter ◽  
Metastable Phases ◽  
Liquid Droplets ◽  
Nucleation Kinetics ◽  
Ni Alloys ◽  
Nonequilibrium Solidification

The liquid droplets produced by atomization processes are believed to undergo substantial supercooling during solidification, because the catalytic heterogeneities, for statistical reasons, tend to be isolated in the larger droplets. This supercooling can lead to the nucleation of metastable phases. As part of a study on the effect of liquid supercooling on nonequilibrium solidification, three binary Fe-Ni alloys have been produced by conventional argon atomization (Fe-20Ni, Fe-30Ni, and Fe-40Ni). The primary variables in these experiments are: i) the alloy composition; and ii) the powder particle diameter (inversely proportional to supercooling). Of particular interest in this system is the competitive nucleation kinetics between the stable fee and metastable bec phases. Bcc is expected to nucleate preferentially with decreasing %Ni and decreasing particle diameter.

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