scholarly journals Chemical Vapor Deposition and Thermal Oxidation of Cuprous Phosphide Nanofilm

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 68
Author(s):  
Xue Peng ◽  
Yanfei Lv ◽  
Shichao Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Oxidation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Raman Spectroscopy ◽  
Inorganic Semiconductors ◽  
Force Microscopy ◽  
Laser Raman ◽  
Atomic Force ◽  
P Type

Inorganic semiconductors usually show n-type characterization; the development of p-type inorganic semiconductor material will provide more opportunities for novel devices. In this paper, we investigated the chemical vapor deposition (CVD) of p-type cuprous phosphide (Cu3P) nanofilm and studied its thermal oxidation behavior. Cu3P film was characterized by optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), laser Raman spectroscopy (Raman), and fluorescence spectroscopy (PL). We found that the thickness of film ranged from 4 to 10 nm, and the film is unstable at temperatures higher than room temperature in air. We provide a way to prepare inorganic phosphide nanofilms. In addition, the possible thermal oxidation should be taken into consideration for practical application.

Temperature Effects on the Preparation of Multi-Walled Carbon Nanotubes by Floating Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 264-265 ◽  
pp. 837-842
Author(s):  
Jin Cheng ◽  
Xiao Ping Zou
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Synthesis Temperature ◽  
Laser Raman Spectroscopy ◽  
Catalytic Chemical Vapor Deposition ◽  
Laser Raman ◽  
Synthesis Of Carbon Nanotubes

In this study, we report the synthesis of carbon nanotubes by floating catalytic chemical vapor deposition, which employs ferrocene as the catalyst precursors and ethanol as carbon source. We obtained massive deposits. The deposits were characterized by scanning electron microscopy, transmission electron microscopy, and visual laser Raman spectroscopy. We discussed the effects of synthesis temperature on the synthesis of carbon nanotubes by floating catalytic chemical vapor deposition. Our results indicated that the synthesis temperature could affect not only on the graphitization degree, but also on the aligned growth of carbon nanotubes and the diameter of carbon nanotubes.

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

Morphology of twinned diamond particles

1995 ◽  
Vol 10 (12) ◽  
pp. 3037-3040 ◽  
Author(s):  
Long Wang ◽  
John C. Angus ◽  
David Aue
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Surface Normal ◽  
Normal Algorithm ◽  
Diamond Particles

Morphology of twinned diamond particles grown by chemical vapor deposition was characterized by atomic force microscopy in both contact and tapping modes. Quantitative angle measurements using a surface normal algorithm were performed on untwinned crystals, penetration twins, re-entrant corners, and fivefold dimples. Tip-sample interaction is discussed. The morphology of the penetration twins and some of the re-entrant corners can be explained by low order Σ3 twins and flat crystallographic surfaces. Abnormally shallow re-entrants with large vicinal faces are attributed to rapid nucleation of new layers at a point along the re-entrant intersection.

scholarly journals Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)

MRS Advances ◽  
2016 ◽  
Vol 1 (55) ◽  
pp. 3667-3672 ◽  
Author(s):  
D. Convertino ◽  
A. Rossi ◽  
V. Miseikis ◽  
V. Piazza ◽  
C. Coletti
Keyword(s):  
Thermal Decomposition ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
Grown Graphene

ABSTRACTThis work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.

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