scholarly journals Correlation of Impedance Matching and Optical Emission Spectroscopy during Plasma-Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 305 ◽  
Author(s):  
Li-Han Kau ◽  
Hung-Jui Huang ◽  
Hsueh-Er Chang ◽  
Yu-Lin Hsieh ◽  
Chien-Chieh Lee ◽  
...  

In this paper, the correlation of impedance matching and optical emission spectroscopy during plasma-enhanced chemical vapor deposition (PECVD) was systematically investigated in SiH4 plasma diluted by various hydrogen dilution ratios. At the onset of nanocrystallinity in SiH4− depleted plasma condition, the SiH+ radical reached a threshold value as the dominant radical, such that a-Si to nc-Si transition was obtained. Furthermore, the experimental data of impedance analysis showed that matching behavior can be greatly influenced by variable plasma parameters due to the change of various hydrogen dilution ratios, which is consistent with the recorded optical emission spectra (OES) of Hα* radicals. Quadruple mass spectrometry (QMS) and transmission electron microscopy (TEM) were employed as associated diagnostic and characterization tools to confirm the phase transformation and existence of silicon nanocrystals.

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 15131-15137 ◽  
Author(s):  
Tengfei Cao ◽  
Haibao Zhang ◽  
Binhang Yan ◽  
Wei Lu ◽  
Yi Cheng

Optical emission spectroscopy and thermal equilibrium analysis were implemented to study the plasma enhanced chemical vapor deposition of nanocrystalline silicon.


1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.


2008 ◽  
Vol 6 (3) ◽  
pp. 218-221
Author(s):  
王志军 Zhijun Wang ◽  
董丽芳 Lifang Dong ◽  
李盼来 Panlai Li ◽  
尚勇 Yong Shang ◽  
何寿杰 Shoujie He

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