scholarly journals Electro-Optical Performance of Organic Thin-Film Using HAT(CN)6 between Anode and Organic Materials

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 648 ◽  
Author(s):  
Hong-Gyu Park ◽  
Sang-Geon Park
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Current Density ◽  
Carrier Transport ◽  
Hole Injection ◽  
Driving Voltage ◽  
Organic Thin Film ◽  
20 Nm ◽  
Injection Barrier ◽  
A Current

We report the electro-optical properties of an organic thin-film by varying the thickness of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT(CN)6), included therein as an interlayer. Devices with HAT(CN)6, which are 7 nm thin films used as interlayers, exhibited good current density–voltage characteristics due to an improved hole injection barrier resulting from carrier ladder effects and carrier transport phenomena. The device without an interlayer showed the worst driving voltage characteristics due to the hole injection barrier. At low driving voltages, a device using 7 nm HAT(CN)6 as an interlayer exhibited a current density about 9.9 times higher than that of a device using 20 nm HAT(CN)6, and showed a current density about 9600 times higher than that of a device without an interlayer. Due to the proper carrier balance, the device using 7 nm HAT(CN)6 as an interlayer achieved a maximum current efficiency of 10.8 cd/A, which was the highest among the devices studied. This shows that the electro-optical properties of devices using HAT(CN)6 as an interlayer are dominated by the holes.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Jinchai Li ◽  
Kai Huang ◽  
Guozhen Liu ◽  
Yinghui Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Carrier Transport ◽  
Defect Density ◽  
Numerical Study ◽  
Structure Design ◽  
Operating Conditions ◽  
Hole Injection ◽  
Electron Blocking Layer ◽  
Recombination Processes

AbstractHere we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density.Synopsis: The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

Optical Properties of Organic Thin Film Transistors

2019 ◽  
Vol 75 (3) ◽  
pp. 236-241
Author(s):  
Jun Bin Ko ◽  
Sang Chul Lim ◽  
Seong Hyun Kim
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Interfacial electronic structures at Fe/pentacene/Fe interfaces

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
Yu-Zhan Wang ◽  
Xing-Yu Gao ◽  
Andrew Wee ◽  
Dong-Chen Qi ◽  
Shi Chen
Keyword(s):  
Thin Film ◽  
Binding Energy ◽  
Chemical Reaction ◽  
Electronic Structures ◽  
Hole Injection ◽  
Photoemission Spectroscopy ◽  
Core Hole ◽  
Band Bending ◽  
Screening Effect ◽  
Injection Barrier

We investigate the interfacial electronic structures of the heterojunction Fe/pentacene/Fe on Cu(100) substrate, using synchrotron-based photoemission spectroscopy. No chemical reaction is observed at either Fe/pentacene or pentacene/Fe interface. The hole injection barrier was estimated to be about 0.95 eV between pentacene and under the Fe thin film. C K-edge NEXAFS revealed that the long axis of pentacene molecule was almost perpendicular to the surface plane. With increasing Fe thickness deposited on pentacene film, the pentacene's HOMO shifts to higher binding energy whereas the C 1s binding energy showed an interesting unusual behaviour due to the initial band bending gradually suppressed by the increasing core-hole screening effect.

scholarly journals STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF METALLIC CLUSTERS EMBEDDED IN ORGANIC THIN FILM (II)

1998 ◽  
Vol 47 (5) ◽  
pp. 829
Author(s):  
OUYANG MIN ◽  
HOU SHI-MIN ◽  
LIN LIN ◽  
LIU WEI-MIN ◽  
XUE ZENG-QUAN ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Organic Thin Film ◽  
Electrical And Optical Properties ◽  
Metallic Clusters

scholarly journals The Effect of Cu Ohmic Contact on Photoelectrochemical Property of S-CuO Thin Film Photocathodes

2019 ◽  
Vol 22 (6) ◽  
pp. 255-262
Author(s):  
Aziz Amrullah ◽  
Gunawan Gunawan ◽  
Nor Basid Adiwibawa Prasetya
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Ohmic Contact ◽  
Photoelectrochemical Properties ◽  
Photoelectrochemical Property ◽  
Onset Potential ◽  
Best Response ◽  
Cyclic Voltammetry Method ◽  
The Stability ◽  
A Current

The development of semiconductor materials as photocathodes that have excellent performance is significant for the photoelectrochemical reaction of hydrogen evolution. The thin film of sulfur-doped Copper (II) oxide (S-CuO)  was successfully synthesized using the cyclic voltammetry method. Investigation of photoelectrochemical properties of S-CuO photocathodes, including current density, onset potential, applied photon to current efficiency (ABPE), and bandgap had been carried out. It was reported that the Cu ohmic contact affected the photoelectrochemical properties and the stability of the thin film. The presence of Cu ohmic contact can improve the performance of S-CuO thin film photocathodes. The S-CuO TU 20 mM thin film has the best response with a current density of -0.923 mA/cm2, an onset potential of 0.59 V, and ABPE of 0.21%. Stability occurred at pH 7 in 0.2M NaH2PO4. The optical analysis showed S-CuO TU 20 mM bandgap of 1.7 eV.

Surgical Diathermy

2011 ◽  
Author(s):  
Patrick Magee ◽  
Mark Tooley
Keyword(s):  
Current Density ◽  
The Body ◽  
Heating Power ◽  
Driving Voltage ◽  
Physiological Effects ◽  
Heating Effect ◽  
Surgical Tool ◽  
Average Current ◽  
Current Densities ◽  
A Current

As discussed in Chapter 4, when a voltage is applied across a conductor, a current will flow. If the voltage is applied across the body via suitable electrodes the body becomes part of the circuit and a current will also flow, the magnitude depending on the properties of the tissues in its path, particularly the resistance. This current can cause heating or other physiological effects, depending on the frequency of the driving voltage. The effects of the domestic mains current flowing through the body was discussed in Chapter 6, but different effects occur as the frequency of the voltage is increased. As the frequency goes up, the heating increases but the tissue stimulation decreases and, at frequencies above 100 kHz (i.e. radio frequencies), the effect is entirely heating. This heating effect in the body by electric current is called diathermy, but the location, concentration and how this heat is used is dependant on the electrode design and the current concentration or current density at any point in the circuit. For a certain applied voltage, the average current throughout the circuit will be the same. The current density is the current per unit area, and so if the material in which the current passes is smaller, the heating effect increases. The resistance of the material is proportional to its size, so as the material becomes smaller then its resistance gets larger. The heating power is the product of the current squared and the resistance (power = I2 × R). Surgical diathermy (or electrosurgery) is where either one or both of the electrodes are very small, and it is used to cut and coagulate tissue. The smaller electrode can be made into a pointed surgical tool and localised heating will occur at the tip of the instrument. The smaller and more pointed the instrument is, the greater the current density will be at the tip. This electrode is classified as the active or live one. The current densities around this electrode can be as much as 10 A cm−2, and the total heating power typically around 200 W.

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