scholarly journals Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1503
Author(s):  
Przemyslaw Niedzielski ◽  
Ewa Raj ◽  
Zbigniew Lisik ◽  
Jerzy Plesiewicz ◽  
Ewa Grzanka ◽  
...  

The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place during the GaN (gallium nitride) growth process using trimethylgallium and ammonia at a pressure of above 2 bar. High pressure accelerates the growth process, but it results in poor thickness and quality in the obtained layers; hence, understanding the factors influencing non-uniformity is crucial. The present investigations have been conducted with the aid of ANSYS Fluent finite volume method commercial software. The obtained results confirm the possibility of increasing the growth rate by more than six times through increasing the pressure from 0.5 bar to 2.5 bar. The analysis shows which zones vortexes form in. Special attention should be paid to the transitional flow within the growth zone as well as the viewport. Furthermore, the normal reactor design cannot be used under the considered conditions, even for the lower pressure value of 0.5 bar, due to high turbulences.

1990 ◽  
Vol 198 ◽  
Author(s):  
T.F. Kuech ◽  
M. Goorsky ◽  
A. Palevsky ◽  
P. Solomon ◽  
M.A. Tischler

ABSTRACTSelective cpitaxial growth during metal-organic vapor phase epitaxy (MOVPE) can be accomplished over a wide range of growth conditions through the usC of alternative growth precursors. We have used chlorine-containing growth precursors, such as diethyl gallium chloride, (C2H5)2GaCl, to selectively grow GaAs and AlxGa1x As. The growth process has been thermodynamically modelled in order to estimate relative growth rates and alloy composition. This model indicates that near the growth front the growth process is chemically similar to the inorganic-based growth of compound semiconductors. This growth technique has been applied to the growth of extremely low resistance ohmic contact structures and quantum well structures.


2013 ◽  
Vol 113 (5) ◽  
pp. 053514 ◽  
Author(s):  
R. Oliva ◽  
J. Ibáñez ◽  
L. Artús ◽  
R. Cuscó ◽  
J. Zúñiga-Pérez ◽  
...  

2020 ◽  
Author(s):  
Pia Vervoorts ◽  
Stefan Burger ◽  
Karina Hemmer ◽  
Gregor Kieslich

The zeolitic imidazolate frameworks ZIF-8 and ZIF-67 harbour a series of fascinating stimuli responsive properties. Looking at their responsitivity to hydrostatic pressure as stimulus, open questions exist regarding the isotropic compression with non-penetrating pressure transmitting media. By applying a state-of-the-art high-pressure powder X-ray diffraction setup, we revisit the high-pressure behaviour of ZIF-8 and ZIF-67 up to <i>p</i> = 0.4 GPa in small pressure increments. We observe a drastic, reversible change of high-pressure powder X-ray diffraction data at <i>p</i> = 0.3 GPa, discovering large volume structural flexibility in ZIF-8 and ZIF-67. Our results imply a shallow underlying energy landscape in ZIF-8 and ZIF-67, an observation that might point at rich polymorphism of ZIF-8 and ZIF-67, similar to ZIF-4(Zn).<br>


2020 ◽  
Author(s):  
Pia Vervoorts ◽  
Stefan Burger ◽  
Karina Hemmer ◽  
Gregor Kieslich

The zeolitic imidazolate frameworks ZIF-8 and ZIF-67 harbour a series of fascinating stimuli responsive properties. Looking at their responsitivity to hydrostatic pressure as stimulus, open questions exist regarding the isotropic compression with non-penetrating pressure transmitting media. By applying a state-of-the-art high-pressure powder X-ray diffraction setup, we revisit the high-pressure behaviour of ZIF-8 and ZIF-67 up to <i>p</i> = 0.4 GPa in small pressure increments. We observe a drastic, reversible change of high-pressure powder X-ray diffraction data at <i>p</i> = 0.3 GPa, discovering large volume structural flexibility in ZIF-8 and ZIF-67. Our results imply a shallow underlying energy landscape in ZIF-8 and ZIF-67, an observation that might point at rich polymorphism of ZIF-8 and ZIF-67, similar to ZIF-4(Zn).<br>


2021 ◽  
Vol 23 (7) ◽  
pp. 4277-4286
Author(s):  
S. V. Chuvikov ◽  
E. A. Berdonosova ◽  
A. Krautsou ◽  
J. V. Kostina ◽  
V. V. Minin ◽  
...  

Pt-Catalyst plays a key role in hydrogen adsorption by Cu-BTC at high pressures.


2003 ◽  
Vol 32 (7) ◽  
pp. 656-660 ◽  
Author(s):  
C. D. Maxey ◽  
J. P. Camplin ◽  
I. T. Guilfoy ◽  
J. Gardner ◽  
R. A. Lockett ◽  
...  

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