scholarly journals Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1722
Author(s):  
Gi-Young Lee ◽  
Min-Shin Cho ◽  
Rae-Young Kim
Keyword(s):  
High Efficiency ◽  
Circuit Board ◽  
High Rate ◽  
Loop Analysis ◽  
Power Circuit ◽  
Parasitic Inductance ◽  
Power Semiconductor ◽  
Lumped Parameter ◽  
Analysis Technique ◽  
Lumped Parameter Modeling

With the development of wide-bandgap (WBG) power semiconductor technology, such as silicon carbide (SiC) and gallium nitride (GaN), the technology of power converters with high efficiency and high-power density is rapidly developing. However, due to the high rate-of-rise of voltage (dv/dt) and of current (di/dt), compared to conventional Si-based power semiconductor devices, the reliability of the device is greatly affected by the parasitic inductance component in the switching loop. In this paper, we propose a power loop analysis method based on lumped parameter modeling of a power circuit board with a wide conduction area for WBG power semiconductors. The proposed analysis technique is modeled based on lumped parameters, so that power loops with various current paths can be analyzed; thus, the analysis is intuitive, easy to apply and realizes dynamic power loop analysis. Through the proposed analysis technique, it is possible to derive the effective parasitic inductance component for the main points in the power circuit board. The effectiveness of the lumped parameter model is verified through PSpice and Ansys Q3D simulation results.

scholarly journals PCB-Based Current Sensor Design for Sensing Switch Current of a Nonmodular GaN Power Semiconductor

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5161
Author(s):  
Ui-Jin Kim ◽  
Min-Soo Song ◽  
Rae-Young Kim
Keyword(s):  
Transient Response ◽  
Printed Circuit Board ◽  
High Efficiency ◽  
High Sensitivity ◽  
Power Converter ◽  
Rogowski Coil ◽  
Circuit Board ◽  
Current Sensor ◽  
Measurement Sensitivity ◽  
Power Semiconductor

GaN-based power semiconductors exhibit small on-resistance and high dv/dt of the switch characteristics, thereby enabling the construction of high-efficiency, high-density semiconductor systems with fast switching and low power loss characteristics and miniaturization of passive devices. However, owing to the characteristics of GaN devices that result in them being significantly faster than other devices, the accuracy of the switching transient response significantly affects the noise or inductance in the device. Therefore, securing sufficient sensor bandwidth is considerably important for accurate current measurement in GaN-based devices. Conversely, the current sensor in the form of a non-insulated coil must secure sufficient bandwidth and overcome the tradeoff relationship with measurement sensitivity; moreover, the sensor configuration must be applicable to various power semiconductor types. This study proposes a current sensor model that applies the principle of the printed circuit board Rogowski coil to a surface mount device-type GaN-based half-bridge structure. This structure is applicable to a nonmodular power converter and is designed to secure sufficient bandwidth with a minimum area while simultaneously exhibiting high sensitivity. For the coil design, mutual inductances with existing coil structures were compared and analyzed, and the frequency response and magnetic analysis were evaluated. Experimental verification was performed and the transient response characteristics in various DC voltage ranges are discussed.

scholarly journals Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6066
Author(s):  
Ui-Jin Kim ◽  
Rae-Young Kim
Keyword(s):  
High Efficiency ◽  
Current Measurement ◽  
Circuit Board ◽  
Current Sensor ◽  
Response Analysis ◽  
Pickup Coil ◽  
Mathematical Methods ◽  
Switching Speed ◽  
Power Semiconductor ◽  
Fast Switching

Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis and protection of a system containing a GaN power semiconductor, the transient state for accurate switch current measurement must be analyzed. The pick-up coil, as a current sensor for switch current measurement in a system comprising a surface-mount-device-type nonmodular GaN power semiconductor, has the advantages of a higher degree-of-freedom configuration for its printed circuit board, a relatively small size, and lower cost than other current sensors. However, owing to the fast switching characteristics of the GaN device, a bandwidth of hundreds MHz must be secured along with a coil configuration that must overcome the limitations of relatively low sensitivity of the conventional current sensor. This paper analyzes the pick-up coil sensor models that can achieve optimal bandwidth and sensitivity for switch current measurement in GaN based device. So four configurable pick-up coil models are considered and compared according to coil-parameter using mathematical methods, magnetic, and frequency-response analysis. Finally, an optimal coil model is proposed and validated using a double-pulse test.

scholarly journals Ultrafast presodiation of graphene anodes for high‐efficiency and high‐rate s odium‐ion storage

InfoMat ◽  
2021 ◽  
Author(s):  
Ganyu Zheng ◽  
Qiaowei Lin ◽  
Jiabin Ma ◽  
Jun Zhang ◽  
Yan‐Bing He ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Rate ◽  
Ion Storage

scholarly journals Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1495
Author(s):  
Loris Pace ◽  
Nadir Idir ◽  
Thierry Duquesne ◽  
Jean-Claude De Jaeger
Keyword(s):  
High Frequency ◽  
Printed Circuit Board ◽  
Power Converters ◽  
Calibration Procedure ◽  
Circuit Board ◽  
Design System ◽  
Switching Speed ◽  
Parasitic Inductance ◽  
Frequency Converters ◽  
S Parameters

Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

Lumped Parameter Modeling of a Magnetorheological Fluid Clutch

2006 ◽  
Author(s):  
John C. Ulicny ◽  
Daniel J. Klingenberg ◽  
Anthony L. Smith ◽  
Zongxuan Sun
Keyword(s):  
Mathematical Model ◽  
Physical Properties ◽  
Magnetorheological Fluid ◽  
Input Current ◽  
Fluid Composition ◽  
Fluid Temperature ◽  
Temperature Range ◽  
Lumped Parameter ◽  
Lumped Parameter Modeling ◽  
Fan Speed

A lumped-parameter mathematical model of an automotive magnetorheological (MR) fluid fan clutch was developed. This model is able to describe the average fluid temperature, average clutch temperature, and output fan speed as a function of time, input current, and fluid composition. The model also reproduces numerous features of fan operation observed experimentally and revealed a mechanism for some observed cases of hysteresis. However, it fails to capture certain other features which lead us to conclude that phenomena which are not included in the model, e.g., sedimentation and re-suspension, are important to the clutch behavior. In addition, the results indicate that certain physical properties need to be measured over a larger temperature range in order for the model to better predict the clutch behavior.

A high-power PCCM LED driver based on GaN eHEMT with hybrid dimming modes

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Xixian Lin ◽  
Yuming Zhang ◽  
Yimeng Zhang ◽  
Guangjian Rong
Keyword(s):  
Printed Circuit Board ◽  
Pulse Width Modulation ◽  
Circuit Board ◽  
Switching Frequency ◽  
Led Driver ◽  
Power Circuit ◽  
Content Type ◽  
Wide Range ◽  
Circuit Function ◽  
Pwm Dimming

Purpose The purpose of this study is to design a more flexible and larger range of the dimming circuit that achieves the independence of multiple LED strings drive and can time-multiplex the power circuit. Design/methodology/approach The state-space method is used to model the BUCK circuit working in Pseudo continuous conduction mode, analyze the frequency characteristics of the system transfer function and design the compensation network. Build a simulation platform on the Orcad PSPICE platform and verify the function of the designed circuit through the simulation results. Use Altium Designer 16 to draw the printed circuit board, complete the welding of various components and use the oscilloscope, direct current (DC) power supply and a signal generator to verify the circuit function. Findings A prototype of the proposed LED driver is fabricated and tested. The measurement results show that the switching frequency can be increased to 1 MHz, Power inductance is 2.2 µH, which is smaller than current research. The dimming ratio can be set from 10% to 100%. The proposed LED driver can output more than 48 W and achieve a peak conversion efficiency of 91%. Originality/value The proposed LED driver adopts pulse width modulation (PWM) dimming at a lower dimming ratio and adopts DC dimming at a larger dimming ratio to realize switching PWM dimming to analog dimming. The control strategy can be more precise and have a wide range of dimming.

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