scholarly journals Analysis and Design of Harmonic Rejection Low Noise Amplifier with an Embedded Notch Filter

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 596
Author(s):  
Raymond Gyaang ◽  
Dong-Ho Lee ◽  
Jusung Kim
Keyword(s):  
Noise Figure ◽  
Harmonic Component ◽  
Notch Filter ◽  
Harmonic Signal ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Analysis And Design ◽  
Harmonic Rejection ◽  
Noise Amplifier ◽  
Source Degeneration

This paper presents the analysis and design of the harmonic rejection (HR) low-noise amplifier (LNA) with the fully passive source degeneration notch filter. The proposed HR LNA provides the rejection for the strong harmonics ( 3 r d ) of the local oscillator (LO) frequencies, where the HR mixer does not provide sufficient HR performance. The proposed 3 r d harmonic notch filter modulates the source degeneration factor and the impedance matching performance thereafter. This effect further helps the blocking of the harmonic signal. The proposed LNA provides 11 dB gain at the fundamental frequency (2.1 GHz) while rejecting the 3rd harmonic component by 37 dBc. Compared to the conventional LNA, the 3rd harmonic notch performance is improved by 23 dB. Additionally, the LNA achieves a minimum noise figure of 3.1 dB, third order input intercept point ( I I P 3 ) of 0.5 dBm, input reflection (S 11 ) below −10 dB from 1.8 GHz–2.3 GHz operational frequency range, and consumed 19 mW of power from a 1.2 V supply.

scholarly journals Performance Analysis of Inductive Source Degeneration Low Noise Amplifier using Multi-finger Technique

2019 ◽  
Vol 8 (9) ◽  
pp. 1636-1642
Keyword(s):  
Performance Analysis ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Noise Amplifier ◽  
Minimum Noise ◽  
Minimum Noise Figure ◽  
Source Degeneration ◽  
Peak Gain

In the current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split into multiple fingers using multi-finger technology. The schematic is captured using ADS. The performance of LNA for various technologies has been analyzed using PTM 180 nm, PTM 130 nm and PTM 90 nm models. The amplifier with single transistor achieves minimum noise figure of 0.178 dB noise figure and maximum gain of 20.045 dB using 130 nm model technology for Bluetooth applications. Similarly 0.288 dB of minimum noise figure and peak gain of 17.971 dB are obtained using multi-finger MOSFET of PTM 90 nm technologyrespectively.The reverse isolation (S12) below -50 dB is achieved.

scholarly journals A concurrent dual-band CMOS low noise amplifier at 2.4/5.2 GHz for WLAN applications

2019 ◽  
Vol 14 (2) ◽  
pp. 555
Author(s):  
S.A.Z. Murad ◽  
A. F. Hasan ◽  
A. Azizan ◽  
A. Harun ◽  
J. Karim
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Notch Filter ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Common Source ◽  
Noise Amplifier

<span>This paper presents a concurrent dual-band CMOS low noise amplifier (LNA) at operating frequency of 2.4 GHz and 5.2 GHz for WLAN applications. The proposed LNA employed cascode common source to obtain high gain using 0.13-µm CMOS technology. The concurrent dual-band frequencies are matched using LC network band-pass and band-stop notch filter at the input and output stages. The filters help to shape the frequency response of the proposed LNA. The simulation results indicate that the LNA achieves a forward gain of 21.8 dB and 14.22 dB, input return loss of -18 dB and -14 dB at 2.4 GHz and 5.2 GHz, respectively. The noise figure of 4.1 dB and 3.5 dB with the input third-order intercept points 7 dBm and 10 dBm are obtained at 2.4 GHz and 5.2 GHz, respectively. The LNA dissipates 2.4 mW power at 1.2 V supply voltage with a chip size of 1.69 mm2.</span>

Blocker filtering low-noise amplifier for SAW-less Bluetooth receiver system

2009 ◽  
Vol 1 (5) ◽  
pp. 447-452 ◽  
Author(s):  
Heesong Seo ◽  
Hyejeong Song ◽  
Changjoon Park ◽  
Jehyung Yoon ◽  
Inyoung Choi ◽  
...  
Keyword(s):  
Noise Figure ◽  
Narrow Band ◽  
Notch Filter ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Receiver System ◽  
The Common ◽  
Noise Amplifier ◽  
A Current

A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth™ application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from each path, the large interferers are rejected and only the wanted signal is amplified. Therefore, it becomes a narrow-band amplifier with blocker filtering capability, realizing a receiver system without need of the off-chip SAW filter. The BF-LNA is designed using a 0.13-μm CMOS process. The measured performances are a gain of 11.4 dB, and a noise figure of 1.85 dB. Attenuation levels at 400 MHz apart from the target frequency are −13 and −29 dBc at each sideband. The P1dB,in and IIP3 are −8.2 and 1.46 dBm, respectively. The proposed BF-LNA can reject large interferers at the front-end of the receiver system with a good noise figure.

scholarly journals Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Ler Chun Lee ◽  
Abu Khari bin A'ain ◽  
Albert Victor Kordesch
Keyword(s):  
Noise Figure ◽  
Notch Filter ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Cmos Process ◽  
Image Rejection ◽  
Fully Integrated ◽  
Active Inductors ◽  
Noise Amplifier

A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

A Ku-Band Low Noise Amplifier Based on Transformer

2013 ◽  
Vol 655-657 ◽  
pp. 1550-1554 ◽  
Author(s):  
Yu Lin Wang ◽  
Man Long Her ◽  
Ming Wei Hsu ◽  
Wen Ko
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Feedback Network ◽  
Chip Size ◽  
Cmos Lna ◽  
Flat Gain ◽  
Noise Amplifier ◽  
Source Degeneration ◽  
Ku Band

The aim of this paper is to design and implement a low noise amplifier (LNA) based on transformer for a Ku-band application. The proposed CMOS LNA can have an enhanced gain because of the cascade topology, a highly flat gain response because of the RC feedback network, and a wide passband because of the source degeneration structure that effectively suppresses the Miller effect. The Ku-band LNA dissipates 22.175 mW power and achieves the S11 of -10.31 to -6.77 dB, S22 of -18.1 to -37.78 dB, flat S21 of 8.78 to 10.59 dB, and noise figure of 3.96 to 5.33 dB across the 12~18 GHz span. The measured output P1dB is approximately -2 dBm. The chip size including all testing pads is only 0.545 x 0.599 mm2.

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

scholarly journals Analysis and design of common-gate low-noise amplifier for wideband applications

2009 ◽  
Vol 37 (2) ◽  
pp. 257-281 ◽  
Author(s):  
Jouni Kaukovuori ◽  
Mikko Kaltiokallio ◽  
Jussi Ryynänen
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Analysis And Design ◽  
Common Gate ◽  
Noise Amplifier

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

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