scholarly journals Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1481
Author(s):  
Marcin Siekacz ◽  
Grzegorz Muziol ◽  
Henryk Turski ◽  
Mateusz Hajdel ◽  
Mikolaj Żak ◽  
...  

We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of proper TJ design with optimized doping level. The strain compensation design with InGaN waveguides and AlGaN claddings is shown to be crucial to avoid cracking and lattice relaxation of the 5 µm thick structure. Vertical connection of n-LDs allows for cascade emission of photons and increases the quantum efficiency n-times. The two-color (blue and green) LEDs are demonstrated. Application of TJs simplifies device processing, reducing the need for applications of p-type contact. The key factor enabling demonstration of such devices is hydrogen-free PAMBE technology, in which activation of buried p-type layers is not necessary.

Author(s):  
Л.К. Марков ◽  
М.В. Кукушкин ◽  
А.С. Павлюченко ◽  
И.П. Смирнова ◽  
Г.В. Иткинсон ◽  
...  

AbstractA high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n -type contact, the n -type contact pads in them are arranged inside the p -type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n - and p -type contacts as well as current-carrying strips.


Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


2007 ◽  
Vol 4 (7) ◽  
pp. 2830-2833 ◽  
Author(s):  
Michael J. Grundmann ◽  
Umesh K. Mishra

2004 ◽  
Vol 4 (1) ◽  
pp. 42-46 ◽  
Author(s):  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Takeyoshi Onuma ◽  
Makoto Ohtani ◽  
Takayuki Makino ◽  
...  

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