scholarly journals Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Energies ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 2387
Author(s):  
Nicolas Rouger ◽  
Aurélien Maréchal
Keyword(s):  
Optimal Design ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Hole Mobility ◽  
Analytical Models ◽  
Drift Region ◽  
Schottky Barrier Diodes ◽  
Power Devices

Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.

Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

2015 ◽  
Vol 103 ◽  
pp. 83-89 ◽  
Author(s):  
Hao Yuan ◽  
Xiaoyan Tang ◽  
Qingwen Song ◽  
Yimen Zhang ◽  
Yuming Zhang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Analytical Models ◽  
Schottky Barrier Diodes

scholarly journals Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 598
Author(s):  
Min-Woo Ha ◽  
Ogyun Seok ◽  
Hojun Lee ◽  
Hyun Ho Lee
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Voltage Drop ◽  
Mobility Model ◽  
Mobility Models ◽  
Schottky Barrier Diodes ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
P Type

Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrication. Here, we present numerical simulations of p-type diamond pseudo-vertical Schottky barrier diodes using various mobility models. The constant mobility model, based on the parameter μconst, fixed the hole mobility absolutely. The analytic mobility model resulted in temperature- and doping concentration-dependent mobility. An improved model, the Lombard concentration, voltage, and temperature (CVT) mobility model, considered electric field-dependent mobility in addition to temperature and doping concentration. The forward voltage drop at 100 A/cm2 using the analytic and Lombard CVT mobility models was 2.86 and 5.17 V at 300 K, respectively. Finally, we used an empirical mobility model based on experimental results from the literature. We also compared the forward voltage drop and breakdown voltage of the devices, according to variations in p- drift layer thickness and cathode length. The device successfully achieved a low specific on-resistance of 6.8 mΩ∙cm2, a high breakdown voltage of 1190 V, and a high figure-of-merit of 210 MW/cm2.

Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

2016 ◽  
Author(s):  
Keita Konishi ◽  
Ken Goto ◽  
Quang Tu Thieu ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Vertical β‐Ga 2 O 3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

2019 ◽  
Vol 217 (3) ◽  
pp. 1900497 ◽  
Author(s):  
Xing Lu ◽  
Xu Zhang ◽  
Huaxing Jiang ◽  
Xinbo Zou ◽  
Kei May Lau ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes ◽  
Switching Performance

scholarly journals The Optimal Design of Trench Field Rings for High Breakdown Voltage

2011 ◽  
Vol 2-3 ◽  
pp. 1047-1050
Author(s):  
Ey Goo Kang ◽  
Sung Young Hong ◽  
Byoung Sub Ahn
Keyword(s):  
Optimal Design ◽  
Breakdown Voltage ◽  
Power Devices ◽  
High Breakdown Voltage ◽  
Process Simulations ◽  
Trench Width ◽  
Conventional Field

The trench field ring for breakdown voltage of power devices is proposed. The new ring can improve 10% efficiency comparing with conventional field ring. Five parameters of trench field ring for design of trench field ring are analyzed and 2-D devices simulation and process simulations are carried out. The number of field ring, juction depth, distance of field rings, trench width, doping profiled are discussed. The proposed trench field ring was better for higher voltage more than 1000V.

Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage

2019 ◽  
Vol 97 ◽  
pp. 101-105 ◽  
Author(s):  
Juan Wang ◽  
Dan Zhao ◽  
Wei Wang ◽  
Xiaofan Zhang ◽  
Yanfeng Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes ◽  
High Breakdown Voltage ◽  
Metal Rings

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

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