Carrier Mobility in Semiconductors at Very Low Temperatures
Keyword(s):
Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen’s model. Freeze-out reduces the carrier concentration with decreasing temperature. Freeze-out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.
2003 ◽
Vol 13
(0)
◽
pp. 95-105
2002 ◽
Vol 67
(4)
◽
pp. 479-489
◽
1969 ◽
Vol 11
(2)
◽
pp. 189-205
◽
Keyword(s):
2021 ◽
Vol 1843
(1)
◽
pp. 012011