Using Interdigitated Organic Electrochemical Transistors as Electrophysiological and Biochemical Sensors

2021 ◽  
Vol 6 (1) ◽  
pp. 46
Author(s):  
Dirk Mayer

Organic electrochemical transistors (OECTs) have emerged as versatile electrophysiological sensors due to their high transconductance, biocompatibility, and transparent channel material. High maximum transconductances were demonstrated, facilitating extracellular recordings from electrogenic cells. However, this often requires large channel dimensions which impede high transistor densities. To improve the device performance and density, we used interdigitated OECTs (iOECTs), which feature high transconductances with small device areas. Superior device performance was achieved by systematically optimizing the electrode layout regarding channel length, number of electrode digits, and electrode width. Interestingly, the maximum transconductance does not straightforwardly scale with the channel width-to-length ratio, which is different from planar OECTs. We used optimized iOECTs for recording action potentials of cardiomyocyte-like HL-1 cells. Furthermore, we embedded the iOECTs in a matrix of polyimide to achieve flexible and transparent bioelectronic devices. These sensors exhibited electrical characteristics similar to those of solid-substrate devices even after experiencing extremely high bending strain. Finally, we used these devices to detect neurotransmitter dopamine and ATP, which play an important role not only in signal transmission in the central nervous system but also in cardiovascular, neurodegenerative, and immune deficiency diseases. Our novel aptasensor possessed ultralow detection limits, which were several orders of magnitude lower than those of the same aptasensors using an amperometric transducer principle. Our results demonstrate that interdigitated OECTs meet two requirements of both electrophysiological and biochemical sensors, namely high device performance and small channel dimensions, and might represent the optimal transducer to integrate these two types of sensors on one chip.

2020 ◽  
Vol 12 (44) ◽  
pp. 49915-49925
Author(s):  
Yujie Yan ◽  
Qizhen Chen ◽  
Xiaomin Wu ◽  
Xiumei Wang ◽  
Enlong Li ◽  
...  

2018 ◽  
Vol 31 (2) ◽  
pp. 1805544 ◽  
Author(s):  
Xihu Wu ◽  
Abhijith Surendran ◽  
Jieun Ko ◽  
Oliver Filonik ◽  
Eva M. Herzig ◽  
...  

Author(s):  
Min Zhu ◽  
Peiyun Li ◽  
Jiulong Li ◽  
Ting Lei

Organic electrochemical transistors (OECTs) based on conjugated polymers have aroused great interest in flexible bioelectronics due to their high transconductance, low operating voltage, and good biocompatibility. The OECT performance is...


2014 ◽  
Vol 1659 ◽  
pp. 63-68
Author(s):  
Vitali Brand ◽  
Michael S Baker ◽  
Maarten P de Boer

ABSTRACTThere has been a recent resurgence in interest in developing ohmic switches to complement transistors in order to address challenges associated with electrical current leakage. A critical limitation in ohmic switches remains the reliability of their electrical contacts. These contacts are prone to hydrocarbon induced contamination which progressively inhibits signal transmission, eventually leading to device failure. We report on progress made towards controlling the contamination phenomenon. We discuss how contact materials and operating environment affect device performance, showing that RuO2 coated microswitch contacts operating in the presence of O2 experience very limited contaminant accumulation even in hydrocarbon-rich environments. We then demonstrate that devices which have experienced contamination can recover their original performance by being operated in clean N2:O2 environment. Finally, we suggest that this resistance recovery is associated with the chemical transformation of the contaminant as opposed to its removal and that the transformed contaminant may shield the Pt coating from oxidation.


2014 ◽  
Vol 1633 ◽  
pp. 95-100
Author(s):  
Forough Mahmoudabadi ◽  
Ta-Ko Chuang ◽  
Jerry Ho Kung ◽  
Miltiadis K. Hatalis

ABSTRACTIn this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance in terms of mobility, on/off current ratio, average off current, threshold voltage, and sub threshold slope is reported.


2008 ◽  
Vol 1138 ◽  
Author(s):  
Xiaojing Zhou ◽  
Karyn E. Mutkins ◽  
Daniel Elkington ◽  
Kathleen Sirois ◽  
Warwick Belcher ◽  
...  

AbstractThe impact of device dimension and architecture on the device performance of an all–solution fabrication organic thin film transistor (OTFT) has been investigated. The saturation drain current is inversely proportional to the channel length, indicating that a characteristic of field–effect like transistor has been obtained. In contrast, the drain current is independent of the thickness of polyvinylphenol (PVP) dielectric layer and a large leakage current is observed at the gate electrode indicating that the device also shows electrochemical transistor characteristics. Although separate conductance measurements of a single poly(3–hexylthiophene) (P3HT) layer and a P3HT/PVP layer reveal that the conductance is proportional to the thickness of the layer, the maximum achieved drain current in the fabricated OTFT is inversely proportional to the P3HT thickness. Using this data, an interface of P3HT/PVP or a maximum P3HT thickness for a working transistor of approximately 160 ± 16 nm can be extracted. The mechanism of operation of these devices is discussed.


Sign in / Sign up

Export Citation Format

Share Document