scholarly journals Diethyl (2-(4-phenyl-1H-1,2,3-triazol-1-yl)benzyl) phosphate

Molbank ◽  
10.3390/m1223 ◽  
2021 ◽  
Vol 2021 (2) ◽  
pp. M1223
Author(s):  
Gabriel P. da Costa ◽  
Diego Alves ◽  
Márcio S. Silva
Keyword(s):  
Chemical Shift ◽  
Structural Characterization ◽  
Structural Elucidation ◽  
Detection Sensitivity ◽  
Practical Procedure ◽  
Brook Rearrangement

Here we describe a full structural elucidation of the diethyl (2-(4-phenyl-1H-1,2,3-triazol-1-yl)benzyl) phosphate. This compound is a common by-product present in the synthetic protocols to access the α-hydroxy phosphonate compounds through of a Phospha-Brook rearrangement. Thus, a complete NMR structural characterization of this rearrangement by-product was performed by 1H, 13C{1H}, 31P{1H}, COSY, HSQC, and HMBC NMR experiments. Additionally, we have demonstrated that the 1H-31P HMBC is a 2D heteroatom NMR experiment which combines the simple identification by 31P chemical shift with the detection sensitivity by 1H spectrum in a practical procedure.

Hydrotelluration of acetylenic esters: structural characterization of stereoisomers of methyl/ethyl β-(aryltelluro)acrylates

RSC Advances ◽  
2015 ◽  
Vol 5 (72) ◽  
pp. 58246-58254 ◽  
Author(s):  
Bandana Singh ◽  
Ashok K. S. Chauhan ◽  
Ramesh C. Srivastava ◽  
Andrew Duthie ◽  
R. J. Butcher
Keyword(s):  
Solid State ◽  
Chemical Shift ◽  
Structural Characterization ◽  
Methyl Ethyl ◽  
Acetylenic Esters ◽  
Solid State Structures

Synthesis of tellurated acrylates, ArTeCHCHCOOR and their solid state structures have been explored. The 125Te chemical shift and 2J(1H–125Te) are useful indicators of their geometry in solution.

Structural characterization of protonated benzeneseleninic acid, the dihydroxyselenonium ion

2000 ◽  
Vol 56 (6) ◽  
pp. 1029-1034 ◽  
Author(s):  
Henning Osholm Sørensen ◽  
Nicolai Stuhr-Hansen ◽  
Lars Henriksen ◽  
Sine Larsen
Keyword(s):  
Hydrogen Bond ◽  
Chemical Shift ◽  
Structural Characterization ◽  
Strong Acid ◽  
Crystallization Behaviour ◽  
Methyl Group ◽  
Bond Lengths ◽  
Pyramidal Configuration

The structure of the dihydroxyphenylselenonium ion (C_{6}H_{7}O_{2}Se^{+}) has been determined in its benzenesulfonate (C_{6}H_{5}O_{3}Se^{-}) and p-toluenesulfonate (C_{7}H_{7}O_{3}S ^{-}) salts. Whereas the former salt is disordered, the latter less dense salt is well defined. This difference in crystallization behaviour is attributed to a C—H...O hydrogen bond involving the methyl group of the p-toluenesulfonate ion. The two salts display very similar hydrogen-bond arrangements and differ only with respect to the stacking of the phenyl groups. The dihydroxyselenonium ion is a strong acid with a pK value of −0.9 determined from the variation of the 77Se chemical shift. A comparison with the two deprotonated species reveals a systematic increase in the Se—O bond lengths and the pyramidal configuration around Se with the number of protons attached.

Structural characterization of vanadium environments in MCM-41 molecular sieve catalysts by solid state 51V NMR

2019 ◽  
Vol 9 (21) ◽  
pp. 6180-6190 ◽  
Author(s):  
Marcos de Oliveira ◽  
Dominik Seeburg ◽  
Jana Weiß ◽  
Sebastian Wohlrab ◽  
Gerd Buntkowsky ◽  
...  
Keyword(s):  
Solid State ◽  
Chemical Shift ◽  
Structural Characterization ◽  
Molecular Sieve ◽  
Nmr Chemical Shift ◽  
51V Nmr ◽  
Advanced Analysis ◽  
Vanadium Species ◽  
Mcm 41

Advanced analysis of 51V NMR chemical shift and quadrupolar tensor parameters revealed novel insights into the structure of vanadium species in MCM-41-based catalysts.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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