Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline CaxSr1–xBi2Ta2O9 (CxS1–xBT) films in ferroelectric-gate field-effect transistors (FeFETs). The CxS1–xBT FeFETs with x = 0, 0.1, 0.2, 0.5, and 1 were characterized by the EBSD inverse pole figure map. The maps of x = 0, 0.1, and 0.2 showed more uniform and smaller grains with more inclusion of the a-axis component along the film normal than the maps of x = 0.5 and 1. Since spontaneous polarization of CxS1–xBT is expected to exist along the a-axis, inclusion of the film normal a-axis component is necessary to obtain polarization versus electric field (P–E) hysteresis curves of the CxS1–xBT when the E is applied across the film. Since memory windows of FeFETs originate from P–E hysteresis curves, the EBSD results were consistent with the electrical performance of the FeFETs, where the FeFETs with x = 0, 0.1, and 0.2 had wider memory windows than those with x = 0.5 and 1. The influence of annealing temperature for C0.1S0.9BT poly-crystallization was also investigated using the EBSD method.

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Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

NPG Asia Materials ◽

10.1038/s41427-021-00314-y ◽

2021 ◽

Vol 13 (1) ◽

Author(s):

Muhammad Naqi ◽

Kyung Hwan Choi ◽

Hocheon Yoo ◽

Sudong Chae ◽

Bum Jun Kim ◽

...

Keyword(s):

Low Temperature ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Optical Measurements ◽

Electrical Performance ◽

Large Area ◽

Nanowire Network ◽

P Type ◽

Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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Low-voltage and high-performance field-effect transistors based on ZnxSn1−xO nanofibers with a ZrOx dielectric

Nanoscale ◽

10.1039/c8nr03887b ◽

2018 ◽

Vol 10 (30) ◽

pp. 14712-14718 ◽

Cited By ~ 13

Author(s):

Zhen Wang ◽

You Meng ◽

Youchao Cui ◽

Caixuan Fan ◽

Guoxia Liu ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Low Voltage ◽

Field Effect Transistors ◽

Electrical Performance ◽

Composition Ratios

The electrical performance of FETs based on ZnxSn1−xO nanofibers can be precisely regulated by manipulating their composition ratios.

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Enhancement of Charge Injection in Organic Field-Effect Transistors Through Semiconducting Organic Buffer Layer

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19242 ◽

2021 ◽

Vol 21 (7) ◽

pp. 3923-3928

Author(s):

Gyujeong Lee ◽

Hea-Lim Park ◽

Sin-Hyung Lee ◽

Min-Hoi Kim ◽

Sin-Doo Lee

Keyword(s):

Buffer Layer ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Systematic Investigation ◽

Electrical Performance ◽

Organic Field Effect Transistors ◽

Semiconductor Interface ◽

Molecular Semiconductors ◽

Injection Barrier

We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.

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Faculty Opinions recommendation of DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors.

Faculty Opinions – Post-Publication Peer Review of the Biomedical Literature ◽

10.3410/f.738001907.793575807 ◽

2020 ◽

Author(s):

Bryan Wei

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors

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Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽

10.1515/nanoph-2020-0401 ◽

2020 ◽

Vol 9 (16) ◽

pp. 4719-4728

Author(s):

Tao Deng ◽

Shasha Li ◽

Yuning Li ◽

Yang Zhang ◽

Jingye Sun ◽

...

Keyword(s):

Molybdenum Disulfide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Three Dimensional ◽

Polarized Light ◽

Optical Field ◽

Two Dimensional ◽

Polarization Ratio ◽

Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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