Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films

Nanocrystalline ZnO thin films were manufactured by Ion Beam Assisted Pulsed Laser Deposition (IBAD PLD). The influence of technological parameters and parameters of ion assisted deposition on structural, morphological and electrical parameters of ZnO thin films were researched in the experiments. As a result it was determined that changes in the basic technological parameters of IBAD PLD (target-substrate distance, substrate temperature, energy density of the laser pulses, annealing temperature, Ar flow) are able to change properties of the thin films significant, including surface roughness in the range from 0.75±0.20 nm to 7.8±2.2 nm, resistivity in the range from 10-3 Ohm cm to 104 Ohm cm. The possibility of controlling the morphological and physical properties of ZnO nanocrystalline films obtained in the experiments has been shown.

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synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

MRS Proceedings ◽

10.1557/proc-647-o13.3/r8.3 ◽

2000 ◽

Vol 647 ◽

Author(s):

K. M. Yu ◽

W. Walukiewicz ◽

W. Shan ◽

J. Wu ◽

J. W. Beeman ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Band Gap Energy ◽

Implantation Dose ◽

Processing Conditions ◽

Nitrogen Implantation ◽

Gap Energy ◽

Activation Efficiency ◽

Similar Processing

AbstractDilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-xthin films. The fraction of N occupying anion sites ("active" N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

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Structural and Optical Characterization of Thermally Oxidized Titanium Thin Films Prepared by Ion Beam-assisted Deposition (IBAD) Technique

Jordan Journal of Physics ◽

10.47011/14.2.1 ◽

2021 ◽

Vol 14 (2) ◽

pp. 101-109

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Visible Spectrum ◽

Film Structure ◽

Thin Layers ◽

Tio2 Thin Films ◽

Structure Transition ◽

Ion Beam Assisted Deposition ◽

Titanium Thin Films

Abstract: Titanium oxide (TiO2) thin ﬁlms have been grown by thermal oxidation of sputtered Titanium (Ti) thin layers using ion beam-assisted deposition (IBAD). X-ray diffraction showed that prior to oxidation, the ﬁlms are composed of hexagonal crystallites of Ti. After oxidation, a film structure transition occurs from monoclinic β-TiO2 type to tetragonal anatase type as the annealing temperature of Ti layer is increased from 250 °C to 550 °C. The film thickness was about 230 nm. Visualization and scanning by atomic force microscope (AFM) revealed a low roughness of the samples, which increases when the annealing temperature is increased. The optical transmittances of the films in the visible spectrum were in the range of 85-95%. The values of optical band gap have been estimated to be 3.43 eV and 3.61 eV, for thin films annealed at 250°C and 550°C, respectively. Keywords: TiO2 thin film, IBAD, XRD, structural and optical properties.

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Influence of annealing temperature and capping layer on the structural, magnetic and transport properties of ion beam sputtered Co2FeAl thin films on Si (1 0 0)

Applied Surface Science ◽

10.1016/j.apsusc.2021.151423 ◽

2022 ◽

Vol 572 ◽

pp. 151423

Author(s):

Soumyarup Hait ◽

Vineet Barwal ◽

Nanhe Kumar Gupta ◽

Lalit Pandey ◽

Vireshwar Mishra ◽

...

Keyword(s):

Thin Films ◽

Transport Properties ◽

Annealing Temperature ◽

Ion Beam ◽

Capping Layer

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Ion Beam Slicing of Single Crystal Oxide Thin Films

MRS Proceedings ◽

10.1557/proc-647-o6.2 ◽

2000 ◽

Vol 647 ◽

Author(s):

S. Thevuthasan ◽

V. Shutthanandan ◽

W. Jiang ◽

W. J. Weber

Keyword(s):

Thin Film ◽

Thin Films ◽

Single Crystals ◽

Annealing Temperature ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Hydrogen Ions ◽

Epitaxial Thin Film ◽

Slicing Method

AbstractEpitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0×1016 H+/cm2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.

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Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

MRS Proceedings ◽

10.1557/proc-650-r8.3/o13.3 ◽

2000 ◽

Vol 650 ◽

Author(s):

K. M. Yu ◽

W. Walukiewicz ◽

W. Shan ◽

J. Wu ◽

J. W. Beeman ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Band Gap Energy ◽

Implantation Dose ◽

Processing Conditions ◽

Nitrogen Implantation ◽

Gap Energy ◽

Activation Efficiency ◽

Similar Processing

ABSTRACTDilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites (“active” N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

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