Influence of annealing temperature and capping layer on the structural, magnetic and transport properties of ion beam sputtered Co2FeAl thin films on Si (1 0 0)

Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -doping can observably improve the TM-I and decrease the resistivity of the samples.

Download Full-text

A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Powder Technology ◽

10.1016/s0038-1098(04)00381-3 ◽

2004 ◽

Vol 86 (2) ◽

Author(s):

K LAL

Keyword(s):

Thin Films ◽

Electron Transport ◽

Low Temperature ◽

Transport Properties ◽

Ion Beam ◽

Tantalum Nitride ◽

Temperature Study ◽

Ion Beam Assisted Deposition ◽

Electron Transport Properties

Download Full-text

CHARACTERIZATION OF Bi2Te3 THIN FILMS FOR APPLICATION IN MICRO-THERMO ELECTRIC COOLERS

International Journal of Modern Physics B ◽

10.1142/s0217979206040866 ◽

2006 ◽

Vol 20 (25n27) ◽

pp. 4063-4068 ◽

Cited By ~ 5

Author(s):

SEUNG WOO HAN ◽

MD ANWARUL HASAN ◽

KI-HO CHO ◽

HAK JOO LEE ◽

DONG-HO KIM ◽

...

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Substrate Temperature ◽

Transport Properties ◽

Electrical Transport ◽

Ion Beam ◽

Test Method ◽

Nanoindentation Test ◽

Electrical Transport Properties ◽

Thermo Electric

In this study we have characterized the mechanical and electrical properties of Bi 2 Te 3 thin films prepared by co-sputtering method. The film structure and morphology were revealed using the X-ray diffraction and scanning electron microscopy (SEM). Thickness of the deposited films was measured using SEM observation after FIB (Focused Ion Beam) milling, and the surface roughness of the films was analyzed using AFM (atomic force microscopy). Electrical transport properties were measured with a Hall effect measurement system, while the mechanical properties were evaluated using nanoindentation test method. Results showed that Bi 2 Te 3 thin films have amorphous structure at lower film thicknesses, but as the thickness increases the structure becomes polycrystalline. Surface roughness and crystal size of the films increased with increase in substrate temperature. Films showed higher elastic modulus and hardness values compared to those of the bulk Bi 2 Te 3 alloy. The electrical transport properties of the films were also affected by the substrate temperature.

Download Full-text

Tuning the Electrical and Thermoelectric Properties of N Ion Implanted SrTiO3 Thin Films and Their Conduction Mechanisms

Scientific Reports ◽

10.1038/s41598-019-51079-y ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 5

Author(s):

Anuradha Bhogra ◽

Anha Masarrat ◽

Ramcharan Meena ◽

Dilruba Hasina ◽

Manju Bala ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Transport Properties ◽

Thermoelectric Properties ◽

Temperature Regime ◽

Electrical Transport ◽

Ion Beam ◽

Temperature Range ◽

Conduction Mechanisms ◽

Band Conduction

Abstract The SrTiO3 thin films were fabricated by pulsed laser deposition. Subsequently ion implantation with 60 keV N ions at two different fluences 1 × 1016 and 5 × 1016 ions/cm2 and followed by annealing was carried out. Thin films were then characterized for electronic structure, morphology and transport properties. X-ray absorption spectroscopy reveals the local distortion of TiO6 octahedra and introduction of oxygen vacancies due to N implantation. The electrical and thermoelectric properties of these films were measured as a function of temperature to understand the conduction and scattering mechanisms. It is observed that the electrical conductivity and Seebeck coefficient (S) of these films are significantly enhanced for higher N ion fluence. The temperature dependent electrical resistivity has been analysed in the temperature range of 80–400 K, using various conduction mechanisms and fitted with band conduction, near neighbour hopping (NNH) and variable range hopping (VRH) models. It is revealed that the band conduction mechanism dominates at high temperature regime and in low temperature regime, there is a crossover between NNH and VRH. The S has been analysed using the relaxation time approximation model and dispersive transport mechanism in the temperature range of 300–400 K. Due to improvement in electrical conductivity and thermopower, the power factor is enhanced to 15 µWm−1 K−2 at 400 K at the higher ion fluence which is in the order of ten times higher as compared to the pristine films. This study suggests that ion beam can be used as an effective technique to selectively alter the electrical transport properties of oxide thermoelectric materials.

Download Full-text

The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films

Thin Solid Films ◽

10.1016/j.tsf.2011.02.036 ◽

2011 ◽

Vol 519 (16) ◽

pp. 5348-5352 ◽

Cited By ~ 20

Author(s):

Ping Fan ◽

Guang-Xing Liang ◽

Xing-Min Cai ◽

Zhuang-Hao Zheng ◽

Dong-Ping Zhang

Keyword(s):

Thin Films ◽

Optical Properties ◽

Annealing Temperature ◽

Ion Beam ◽

Electrical And Optical Properties

Download Full-text

Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2010.09.012 ◽

2010 ◽

Vol 71 (12) ◽

pp. 1713-1716 ◽

Cited By ~ 26

Author(s):

Zhuang-hao Zheng ◽

Ping Fan ◽

Guang-xing Liang ◽

Dong-ping Zhang ◽

Xing-min Cai ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Annealing Temperature ◽

Ion Beam ◽

Temperature Influence

Download Full-text

Researching Influence of IBAD PLD Parameters on Properties of Nanocrystalline ZnO Thin Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.481.55 ◽

2013 ◽

Vol 481 ◽

pp. 55-59 ◽

Cited By ~ 3

Author(s):

Oleg Alexeevich Ageev ◽

Dmitriy Anatolievich Golosov ◽

Evgeny Genadievich Zamburg ◽

Alexandr Michailovich Alexeev ◽

Zakhar Evgenievich Vakulov ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Laser Pulses ◽

Laser Deposition ◽

Zno Thin Films ◽

Nanocrystalline Films ◽

Electrical Parameters ◽

Technological Parameters ◽

Substrate Distance

Nanocrystalline ZnO thin films were manufactured by Ion Beam Assisted Pulsed Laser Deposition (IBAD PLD). The influence of technological parameters and parameters of ion assisted deposition on structural, morphological and electrical parameters of ZnO thin films were researched in the experiments. As a result it was determined that changes in the basic technological parameters of IBAD PLD (target-substrate distance, substrate temperature, energy density of the laser pulses, annealing temperature, Ar flow) are able to change properties of the thin films significant, including surface roughness in the range from 0.75±0.20 nm to 7.8±2.2 nm, resistivity in the range from 10-3 Ohm cm to 104 Ohm cm. The possibility of controlling the morphological and physical properties of ZnO nanocrystalline films obtained in the experiments has been shown.

Download Full-text

synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

MRS Proceedings ◽

10.1557/proc-647-o13.3/r8.3 ◽

2000 ◽

Vol 647 ◽

Author(s):

K. M. Yu ◽

W. Walukiewicz ◽

W. Shan ◽

J. Wu ◽

J. W. Beeman ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Band Gap Energy ◽

Implantation Dose ◽

Processing Conditions ◽

Nitrogen Implantation ◽

Gap Energy ◽

Activation Efficiency ◽

Similar Processing

AbstractDilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-xthin films. The fraction of N occupying anion sites ("active" N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

Download Full-text

Structural and Optical Characterization of Thermally Oxidized Titanium Thin Films Prepared by Ion Beam-assisted Deposition (IBAD) Technique

Jordan Journal of Physics ◽

10.47011/14.2.1 ◽

2021 ◽

Vol 14 (2) ◽

pp. 101-109

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Ion Beam ◽

Visible Spectrum ◽

Film Structure ◽

Thin Layers ◽

Tio2 Thin Films ◽

Structure Transition ◽

Ion Beam Assisted Deposition ◽

Titanium Thin Films

Abstract: Titanium oxide (TiO2) thin ﬁlms have been grown by thermal oxidation of sputtered Titanium (Ti) thin layers using ion beam-assisted deposition (IBAD). X-ray diffraction showed that prior to oxidation, the ﬁlms are composed of hexagonal crystallites of Ti. After oxidation, a film structure transition occurs from monoclinic β-TiO2 type to tetragonal anatase type as the annealing temperature of Ti layer is increased from 250 °C to 550 °C. The film thickness was about 230 nm. Visualization and scanning by atomic force microscope (AFM) revealed a low roughness of the samples, which increases when the annealing temperature is increased. The optical transmittances of the films in the visible spectrum were in the range of 85-95%. The values of optical band gap have been estimated to be 3.43 eV and 3.61 eV, for thin films annealed at 250°C and 550°C, respectively. Keywords: TiO2 thin film, IBAD, XRD, structural and optical properties.

Download Full-text