synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
J. Wu ◽  
J. W. Beeman ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Band Gap Energy ◽  
Implantation Dose ◽  
Processing Conditions ◽  
Nitrogen Implantation ◽  
Gap Energy ◽  
Activation Efficiency ◽  
Similar Processing

AbstractDilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-xthin films. The fraction of N occupying anion sites ("active" N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
J. Wu ◽  
J. W. Beeman ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Band Gap Energy ◽  
Implantation Dose ◽  
Processing Conditions ◽  
Nitrogen Implantation ◽  
Gap Energy ◽  
Activation Efficiency ◽  
Similar Processing

ABSTRACTDilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites (“active” N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

A Study on Effect of Sol Aging Time on Optical Properties of ZnO Thin Films: Spectroscopic Ellipsometry Method

2019 ◽  
Vol 11 (2) ◽  
pp. 100-108 ◽  
Author(s):  
Ehsan Motallebi Aghkonbad ◽  
Maryam Motallebi Aghgonbad ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Aging Time ◽  
Imaginary Part ◽  
Spectroscopic Ellipsometry ◽  
Annealing Temperature ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Gap Energy

Background: Due to wide band gap and large excitonic binding energy, being inexpensive, abundance in nature and easy synthesis ZnO is a promising candidate in many applications such as solar cells. Experimental: In the current work a series of ZnO thin films were deposited on glass substrates using sol-gel method to investigate the change in optical behavior of the film with sol aging time (asprepared, 8, 16, 24 and 32 hours) and the annealing temperature (300ᵒC and 500ᵒC). The optical properties of thin films were explored using spectroscopic ellipsometry method including the real and imaginary part of refractive index, real and imaginary part of dielectric function and band gap energy of the layers in the 300-900 nanometer wavelength range. Results: It can be deduced from the results that sol aging time and annealing temperature, affect the optical properties of the samples. Using single oscillator energy model of Wemple and Di Domenico parameters such as free charge carrier concentration ratio to effective mass, and plasma frequency, were calculated. Conclusion: The films prepared using 24 h aged solution, had the highest transmittance and the largest band gap energy.

scholarly journals Effect of Annealing Temperature on the Performance of ZnO Seed Layer for Photoanode in Photoelectrochemical Cells

2020 ◽  
Vol 398 ◽  
pp. 156-166
Author(s):  
Asla A. Al-Zahrani ◽  
Zulkarnain Zainal ◽  
Zainal Abidin Talib ◽  
Hong Ngee Lim ◽  
Laimy Mohd Fudzi ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Band Gap ◽  
Seed Layer ◽  
Annealing Temperature ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Zno Nanoparticle ◽  
Gap Energy ◽  
Ito Glass

Zinc oxide (ZnO) thin films were coated onto Indium Tin Oxide (ITO) glass substrate using spin coating technique as a function of annealing temperature. The thin film preparation was undertaken by utilising zinc acetate dihydrate, ethanol and diethanolamine as the precursors. The films were coated at room temperature prior to being annealed at temperatures ranging from 300 °C to 450 °C. The resulting crystalline structure and surface morphology of the thin films were then examined using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). UV-visible spectrophotometer was also used to record the optical absorbance in wavelengths ranging from 200 to 800 nm. The findings revealed that the ZnO thin films showed a single phase of wurtzite with n-type semiconductor, with the lowest value of band gap energy of 3.28 eV for ZnO thin films annealed at 350 °C. FESEM results showed that the ZnO nanoparticles were very compact on the surface, whereby the average particle size was equivalent to 108.5, 115.3, 108.2 and 107.8 nm at the temperatures 300 °C, 350 °C, 400 °C, and 450 °C, respectively. Additionally, the highest photoconversion efficiency (0.11%) recorded for the sample was annealed at 350◦C. Thus, annealing temperature was found to significantly affect the optical and electrical properties of ZnO nanoparticle seed layer, as well as its band gap energy and surface morphology.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

Effect of vacuum annealing on the properties of one step thermally evaporated Sb2S3 thin films for photovoltaic applications

2021 ◽  
Author(s):  
Emna Gnenna ◽  
Naoufel Khemiri ◽  
Minghua Kong ◽  
Maria Isabel Alonso ◽  
Mounir Kanzari
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Optical Parameters ◽  
X Ray ◽  
Vis Spectroscopy ◽  
One Step

Sb2S3 powder was successfully synthesized by solid state reaction technique using high-purity elemental antimony and sulfur. Sb2S3 thin films were deposited on unheated glass substrates by one step thermal evaporation and annealed under vacuum atmosphere for 2 hours at different temperatures 150, 200 and 250 °C. Different characterization techniques were used to better understand the behavior of the Sb2S3 material. X-ray diffraction (XRD) and Raman spectroscopy confirmed the formation of pure Sb2S3 powder with lattice parameters a = 11.07 Å, b = 11.08 Å and c = 3.81 Å. The effect of vacuum annealing temperature on the properties of the films was studied. XRD analysis revealed that as-deposited and annealed films at 150ºC were amorphous in nature whereas those annealed at T ≥ 200°C were polycrystalline with a preferred orientation along (201) plane. The crystallite size of the polycrystalline films showed a decrease from 75.8 to 62.9 nm with the increase of the annealing temperature from 200 to 250 °C. The Raman analysis showed several peaks corresponding to the stibnite Sb2S3 phase. The surface morphology of the films was examined by atomic force microscopy (AFM). The surface roughness decreases slightly as the transformation from the amorphous to the crystalline phase occurs. The chemical compositions of Sb2S3 films were analyzed by energy dispersive X-ray spectroscopy (EDS), revealing that all films were Sb-rich. The optical parameters were estimated from the transmittance and reflectance spectra recorded by UV-Vis spectroscopy. A reduction in the direct band gap energy from 2.12 to 1.70 eV with the increase of annealing temperature was also found.

Effect of Nb doping on morphology, crystal structure, optical band gap energy of TiO2 thin films

2014 ◽  
Vol 14 (3) ◽  
pp. 421-427 ◽  
Author(s):  
Deuk Yong Lee ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
Myung-Hyun Lee ◽  
Nam-Ihn Cho
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Nb Doping
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