Effect of oxygen flow rate on microstructure properties of SiO2 thin films prepared by ion beam sputtering

2018 ◽  
Vol 482 ◽  
pp. 203-207 ◽  
Author(s):  
Lishuan Wang ◽  
Yugang Jiang ◽  
Chenghui Jiang ◽  
Huasong Liu ◽  
Yiqin Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Effect Of Oxygen

scholarly journals Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 517
Author(s):  
Pengfei Kong ◽  
Yunti Pu ◽  
Ping Ma ◽  
Jiliang Zhu
Keyword(s):  
Refractive Index ◽  
Surface Quality ◽  
Flow Rate ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Scandium Oxide ◽  
Oxygen Flow ◽  
Ion Beam Sputtering ◽  
Oxygen Defects ◽  
Beam Sputtering

Scandium oxide (Sc2O3) thin films with different numbers of oxygen defects were prepared by ion-beam sputtering under different oxygen flow rates. The results showed that the oxygen defects heavily affected crystal phases, optical properties, laser-induced damage threshold (LIDT) and surface quality of Sc2O3 films. The thin film under 0 standard-state cubic centimeter per minute (sccm) oxygen flow rate had the largest number of oxygen defects, which resulted in the lowest transmittance, LIDT and the worst surface quality. In addition, the refractive index of 0 sccm Sc2O3 film could not be measured in the same way. When the oxygen flow rate was 15 sccm, the Sc2O3 film possessed the best transmittance, refractive index, LIDT and surface roughness due to the lowest number of oxygen defects. This work elucidated the relationship between oxygen defects and properties of Sc2O3 films. Controlling oxygen flow rate was an important step of limiting the number of oxygen defects, which is of great significance for industrial production.

Indium Tin Oxide Thin Films Deposited at Low Temperature Using Dual Ion Beam Sputtering

2014 ◽  
Vol 1699 ◽  
Author(s):  
Wilhelmus J. Geerts ◽  
Nelson A. Simpson ◽  
Alan D. Woodall ◽  
Maclyn Stuart Compton
Keyword(s):  
Flow Rate ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

ABSTRACTITO samples were sputtered at room temperature by ion assisted dual ion beam sputtering using atomic or molecular oxygen. The electrical properties appear to depend on the oxygen flow rate during deposition and the resistivity decreases for samples sputtered at a higher oxygen flow rate (1-5 sccm). The resistivity is lowest at an oxygen flow rate of 4 sccm. The average absorption in the visible part of the spectrum also decreases as a function of the oxygen flow rate and is lower for samples sputtered with atomic oxygen. The figure of merit, i.e. the ratio of the conductivity versus the average absorption in the visible range, increases for higher oxygen flow rates and is typically 20-60% higher for samples sputtered using an atomic oxygen assist beam.

Effect of Oxygen Flow Rate on the Memristive Behavior of Reactively Sputtered TiO2 Thin Films

2014 ◽  
Vol 1024 ◽  
pp. 64-67 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Muhamad Uzair Shamsul ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Deposition Process ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Switching Behavior ◽  
Memristive Behavior ◽  
Effect Of Oxygen

The paper presents the memristive behavior of sputtered titania thin films on ITO substrate. Titania thin films were deposited by RF magnetron sputtering method while varying the oxygen flow rate of (O2/ (O2 + Ar) x100 = 10, 20 and 30 %) during deposition process. The effect of oxygen flow rate to the structural properties was studied including the physical thickness, and also the effect towards switching behavior. It was found that sample deposited at 20 % oxygen flow rate gave better memristive behavior compared to other samples, with larger ROFF/RON ratio of 9. The characterization of memristive behavior includes the effect of electroforming process and successive of I-V measurements are discussed.

In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

1999 ◽  
Vol 569 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Ion Beam ◽  
Oxygen Deficiency ◽  
Ion Beam Sputtering ◽  
Optical Absorption Peak ◽  
Beam Sputtering ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTThe optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

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