scholarly journals Shearing Characteristics of Cu-Cu Joints Fabricated by Two-Step Process Using Highly -Oriented Nanotwinned Cu

Metals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1864
Author(s):  
Jia-Juen Ong ◽  
Dinh-Phuc Tran ◽  
Shih-Chi Yang ◽  
Kai-Cheng Shie ◽  
Chih Chen
Keyword(s):  
Electrical Resistance ◽  
Bonding Strength ◽  
Annealing Process ◽  
Bonding Interface ◽  
Post Annealing ◽  
Ductile Fractures ◽  
Annealing Step ◽  
Scaling Down ◽  
Cu Bonding ◽  
Micrometer Scale

Cu-Cu bonding has the potential to break through the extreme boundary of scaling down chips’ I/Os into the sub-micrometer scale. In this study, we investigated the effect of 2-step bonding on the shear strength and electrical resistance of Cu-Cu microbumps using highly <111>-oriented nanotwinned Cu (nt-Cu). Alignment and bonding were achieved at 10 s in the first step, and a post-annealing process was further conducted to enhance its bonding strength. Results show that bonding strength was enhanced by 2–3 times after a post-annealing step. We found 50% of ductile fractures among 4548 post-annealed microbumps in one chip, while the rate was less than 20% for the as-bonded counterparts. During the post-annealing, interfacial grain growth and recrystallization occurred, and the bonding interface was eliminated. Ductile fracture in the form of zig-zag grain boundary was found at the original bonding interface, thus resulting in an increase in bonding strength of the microbumps.

scholarly journals Effects of static load and residual stress on fused silica direct bonding interface properties

2021 ◽  
Vol 127 (12) ◽  
Author(s):  
Pascal Birckigt ◽  
Kevin Grabowski ◽  
Gilbert Leibeling ◽  
Thomas Flügel-Paul ◽  
Martin Heusinger ◽  
...  
Keyword(s):  
Residual Stress ◽  
Bonding Strength ◽  
Smooth Surface ◽  
Static Load ◽  
Fused Silica ◽  
Interface Stress ◽  
Bonding Interface ◽  
Interface Properties ◽  
Large Area ◽  
Annealing Step

AbstractDefect free direct bonding of rigid and large area glass samples, such as prisms, becomes increasingly important for the manufacturing of modern optical and optomechanical components. Typically, in order to apply a static load during the annealing step, specialized heat-resistant pressure mountings are required. This makes manufacturing effortful and cost-intensive. In this paper, we present plasma activated bonding experiments conducted on fused silica plates where residual stress has been introduced prior to the contacting step and where annealing is performed with and without a static load. We find that in case of a sufficiently smooth surface, bonding strength is insensitive towards residual stress or static load, or more precisely, towards the interface stress. Furthermore, the residual Fresnel reflection losses of the realized bonding interface were optically measured and they amount to only $$10^{-6}$$ 10 - 6 . We propose that a consideration of the change in Gibbs free energy, dG, allows qualitatively predicting the resulting bonding strength and its spatial distribution, where dG is determined by surface energy and interface stress. At the end of this article, conceivable applications are discussed.

Tuning the pinning direction of giant magnetoresistive sensor by post annealing process

2021 ◽  
Vol 64 (6) ◽  
Author(s):  
Zhiqiang Cao ◽  
Yiming Wei ◽  
Wenjing Chen ◽  
Shaohua Yan ◽  
Lin Lin ◽  
...  
Keyword(s):  
Annealing Process ◽  
Magnetoresistive Sensor ◽  
Post Annealing

scholarly journals The Interfacial Characterization and Performance of Cu/Al-Conductive Heads Processed by Explosion Welding, Cold Pressure Welding, and Solid-Liquid Casting

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 237 ◽  
Author(s):  
Yanni Wei ◽  
Hui Li ◽  
Fu Sun ◽  
Juntao Zou
Keyword(s):  
Corrosion Resistance ◽  
Bonding Strength ◽  
Explosive Welding ◽  
Slag Inclusion ◽  
Explosion Welding ◽  
Bonding Interface ◽  
Pressure Welding ◽  
And Performance ◽  
Solid Liquid ◽  
Cold Pressure

The Cu/Al composites conductive head is widely used in hydrometallurgy as the core component of cathode plate. Its conductive properties directly affect the power consumption, and the bonding strength and corrosion resistance determine the conductive head service life. The Cu/Al conductive head prepared by explosion welding, cold pressure welding, and solid-liquid casting methods were investigated in this paper. The interface microstructure and compositions were examined by scanning electron microscope and X-ray energy dispersive spectrometry. The bonding strength, interface conductivity, and the corrosion resistance of three types of joints were characterized. The Cu/Al bonding interface produced by explosive welding presented a wavy-like morphology with typical defects and many of brittle compounds. A micro-interlocking effect was caused by the sawtooth structures on the cold pressure welding interface, and there was no typical metallurgical reaction on the interface. The Cu/Al bonding interface prepared by solid-liquid casting consisted mainly of an Al-Cu eutectic microstructure (Al2Cu+Al) and partial white slag inclusion. The thickness of the interface transition layer was about 200–250 µm, with defects such as holes, cracks, and unwelded areas. The conductivity, interfacial bonding strength, and corrosion resistance of the conductive head prepared by explosive welding were superior to the other two.

The effect of post-annealing process in NdGaO3 new seed layer for LPE

2003 ◽  
Vol 392-396 ◽  
pp. 951-955 ◽  
Author(s):  
Seok Beom Kim ◽  
Sang-Im Yoo ◽  
Yasuji Yamada
Keyword(s):  
Seed Layer ◽  
Annealing Process ◽  
Post Annealing

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

Highly Doped P-Type, N-Type CdS Thin Films and Diodes

1993 ◽  
Vol 329 ◽  
Author(s):  
Wen P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Process ◽  
Laser Deposition ◽  
Post Annealing ◽  
Gaas Substrates ◽  
Cds Thin Film ◽  
Good Crystalline Quality ◽  
Cds Thin Films ◽  
P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

Cu/MoS2/ITO based hybrid structure for catalysis of hydrazine oxidation

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15374-15378 ◽  
Author(s):  
Sajjad Hussain ◽  
Kamran Akbar ◽  
Dhanasekaran Vikraman ◽  
Muhmmad Arslan Shehzad ◽  
Seunho Jung ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Sputtering ◽  
Hybrid Structure ◽  
Annealing Process ◽  
Large Area ◽  
Post Annealing ◽  
Hydrazine Oxidation

We have successfully demonstrated large-area and continuous MoS2 films grown on indium tin oxide (ITO) substrates by RF sputtering followed by a post-annealing process.

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