Proxy — A new approach for proximity correction in electron beam lithography

High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abc78d ◽

2020 ◽

Vol 59 (12) ◽

pp. 126502

Author(s):

Moataz Eissa ◽

Takuya Mitarai ◽

Tomohiro Amemiya ◽

Yasuyuki Miyamoto ◽

Nobuhiko Nishiyama

Keyword(s):

Electron Beam ◽

Proximity Effect ◽

Electron Beam Lithography ◽

Photonic Waveguides ◽

Proximity Effect Correction

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Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

Electronics Letters ◽

10.1049/el:19990817 ◽

1999 ◽

Vol 35 (15) ◽

pp. 1283 ◽

Cited By ~ 2

Author(s):

S. Michel ◽

E. Lavallée ◽

J. Beauvais ◽

J. Mouine

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Lithography Process

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Nanooptical elements for visual verification

Scientific Reports ◽

10.1038/s41598-021-81950-w ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Alexander Goncharsky ◽

Anton Goncharsky ◽

Dmitry Melnik ◽

Svyatoslav Durlevich

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Mass Production ◽

Optical Element ◽

Visual Image ◽

Zero Order ◽

Diffractive Optical Elements ◽

Optical Elements ◽

Standard Equipment ◽

Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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