scholarly journals Suppressed Transmission of Long-Range Surface Plasmon Polariton by TE-Induced Edge Plasmon

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1198
Author(s):  
Guhwan Kim ◽  
Myunghyun Lee
Keyword(s):  
Integrated Circuits ◽  
Long Range ◽  
Surface Plasmon ◽  
Communication Systems ◽  
Extinction Ratio ◽  
Polarized Light ◽  
Field Enhancement ◽  
Plasmon Mode ◽  
Radiation Length ◽  
Wide Range

Work on controlling the propagation of surface plasmon polaritons (SPPs) through the use of external stimuli has attracted much attention due to the potential use of SPPs in nanoplasmonic integrated circuits. We report that the excitation of edge plasmon by TE-polarized light passing across gapped-SPP waveguides (G-SPPWs) leads to the suppressed transmission of long-range SPPs (LRSPPs) propagating along G-SPPWs. The induced current density by highly confined edge plasmon is numerically investigated to characterize the extended radiation length of decoupled LRSPPs by the TE-induced edge plasmon. The suppressed transmission of LRSPPs is confirmed using the measured extinction ratio of the plasmonic signals which are generated from the modulated optical signals, when compared to the extended radiation length calculated for a wide range of the input power. It is also shown that LRSPP transmission is sensitive to the excited power of edge plasmon in the gap through the permittivity change near the gap. Such a control of SPPs through the use of light could be boosted by the hybridized edge plasmon mode and a huge field enhancement using nanogap, gratings or metasurfaces, and could provide opportunities for ultrafast nano-plasmonic signal generation that is compatible with pervasive optical communication systems.

Large field enhancement and perfect absorption by coupling between dark plasmon mode and surface plasmon polaritons

2018 ◽  
Vol 47 (3) ◽  
pp. 301-306
Author(s):  
Nian Gao ◽  
Junqiao Wang ◽  
Jia Zhang ◽  
Shu Chen ◽  
Erjun Liang ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Field Enhancement ◽  
Plasmon Mode ◽  
Large Field ◽  
Perfect Absorption ◽  
Plasmon Polaritons

scholarly journals A compact plasmonic MOS-based 2×2 electro-optic switch

Nanophotonics ◽  
2015 ◽  
Vol 4 (3) ◽  
pp. 261-268 ◽  
Author(s):  
Chenran Ye ◽  
Ke Liu ◽  
Richard A. Soref ◽  
Volker J. Sorger
Keyword(s):  
Integrated Circuits ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Extinction Ratio ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Seamless Integration ◽  
Electro Optic

Abstract We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

scholarly journals Variable Optical Attenuator Based on Long-Range Surface Plasmon Polariton Multimode Interference Coupler

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Xiaoqiang Sun ◽  
Ying Xie ◽  
Tong Liu ◽  
Changming Chen ◽  
Fei Wang ◽  
...  
Keyword(s):  
Long Range ◽  
Surface Plasmon ◽  
Surface Plasmon Polariton ◽  
Extinction Ratio ◽  
Multimode Interference ◽  
Optical Interconnection ◽  
Force Microscopy ◽  
Variable Optical Attenuator ◽  
Atomic Force ◽  
Plasmon Polariton

The fabrication and characterization of a thermal variable optical attenuator based on long-range surface plasmon polariton (LRSPP) waveguide with multimode interference architecture were investigated. The surface morphology and waveguide configuration of Au stripe were studied by atomic force microscopy. The fluctuation of refractive index of poly(methyl-methacrylate-glycidyl-methacrylate) polymer cladding was confirmed to be less than3×10-4within 8 h curing at120°C. The end-fire excitation of LRSPP mode guiding at 1550 nm along Au stripe indicated that the extinction ratio of attenuator was about 12 dB at a driving power of 69 mW. The measured optical rise time and fall time are 0.57 and 0.87 ms, respectively. These favorable properties promise potentials of this plasmonic device in the application of optical interconnection.

scholarly journals High Sensitivity Refractive Index Sensor Based on the Excitation of Long-Range Surface Plasmon Polaritons in H-Shaped Optical Fiber

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 2111 ◽  
Author(s):  
Nelson Gomez-Cardona ◽  
Erick Reyes-Vera ◽  
Pedro Torres
Keyword(s):  
Refractive Index ◽  
Optical Fiber ◽  
Long Range ◽  
Surface Plasmon ◽  
High Sensitivity ◽  
Refractive Index Sensor ◽  
Promising Alternative ◽  
Sensor Performance ◽  
Wide Range ◽  
Sensor Structure

In this paper, we propose and numerically analyze a novel design for a high sensitivity refractive index (RI) sensor based on long-range surface plasmon resonance in H-shaped microstructured optical fiber with symmetrical dielectric–metal–dielectric waveguide (DMDW). The influences of geometrical and optical characteristics of the DMDW on the sensor performance are investigated theoretically. A large RI analyte range from 1.33 to 1.39 is evaluated to study the sensing characteristics of the proposed structure. The obtained results show that the DMDW improves the coupling between the fiber core mode and the plasmonic mode. The best configuration shows 27 nm of full width at half maximum with a resolution close to 1.3 × 10 − 5 nm, a high sensitivity of 7540 nm/RIU and a figure of merit of 280 RIU − 1 . Additionally, the proposed device has potential for multi-analyte sensing and self-reference when dissimilar DMDWs are deposited on the inner walls of the side holes. The proposed sensor structure is simple and presents very competitive sensing parameters, which demonstrates that this device is a promising alternative and could be used in a wide range of application areas.

Coupling between finite electromagnetic beam and long-range surface-plasmon mode

1983 ◽  
Vol 22 (21) ◽  
pp. 3397 ◽  
Author(s):  
Robert T. Deck ◽  
Dror Sarid ◽  
Grieg A. Olson ◽  
J. M. Elson
Keyword(s):  
Long Range ◽  
Surface Plasmon ◽  
Plasmon Mode ◽  
Surface Plasmon Mode ◽  
Electromagnetic Beam

scholarly journals Emerging heterogeneous integrated photonic platforms on silicon

Nanophotonics ◽  
2015 ◽  
Vol 4 (1) ◽  
pp. 143-164 ◽  
Author(s):  
Sasan Fathpour
Keyword(s):  
Integrated Circuits ◽  
Extinction Ratio ◽  
Nonlinear Effects ◽  
Optical Nonlinearity ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Integrated Photonics ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Wide Range

AbstractSilicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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