scholarly journals Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1358
Author(s):  
Donglou Ren ◽  
Xue Luo ◽  
Shuo Chen ◽  
Zhuanghao Zheng ◽  
Michel Cathelinaud ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photocurrent Density ◽  
Fast Response ◽  
Open Circuit ◽  
Charge Carrier Density ◽  
Response And Recovery ◽  
Direct Band ◽  
Low Charge ◽  
Antimony Selenide

Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (Voc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped Sb2Se3 thin films were successfully prepared using a homemade target via magnetron sputtering. The Te atoms were expected to be inserted in the spacing of (Sb4Se6)n ribbons based on increased lattice parameters in this study. Moreover, the thin film was found to possess a narrow and direct band gap of approximately 1.27 eV, appropriate for harvesting the solar energy. It was found that the photoelectric performance is related to not only the quality of films but also the preferred growth orientation. The Te-Sb2Se3 film annealed at 325 °C showed a maximum photocurrent density of 1.91 mA/cm2 with a light intensity of 10.5 mW/cm2 at a bias of 1.4 V. The fast response and recovery speed confirms the great potential of these films as excellent photodetectors.

scholarly journals Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Ft Ir

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.

scholarly journals Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

2018 ◽  
Vol 53 ◽  
pp. 01008
Author(s):  
Feihu Tan ◽  
XiaoPing Liang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Specific Capacity ◽  
Rf Magnetron Sputtering ◽  
Open Circuit ◽  
Working Pressure ◽  
Thin Film Battery ◽  
A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Thin film preparation of the low charge carrier density Kondo system CeSb

1999 ◽  
Vol 259-261 ◽  
pp. 298-299 ◽  
Author(s):  
H. Meffert ◽  
J. Oster ◽  
P. Haibach ◽  
M. Huth ◽  
H. Adrian
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Carrier Density ◽  
Charge Carrier Density ◽  
Kondo System ◽  
Thin Film Preparation ◽  
Film Preparation ◽  
Low Charge

PHOTOELECTROCHEMICAL WATER SPLITTING USING BILAYERED ZnO/SrTiO3 PHOTOELECTRODES

2013 ◽  
Vol 22 ◽  
pp. 545-551 ◽  
Author(s):  
SURBHI CHOUDHARY ◽  
ANJANA SOLANKI ◽  
DIPIKA SHARMA ◽  
NIRUPAMA SINGH ◽  
SUMANT UPADHYAY ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Open Circuit Potential ◽  
Sol Gel ◽  
Photocurrent Density ◽  
Spectroscopic Studies ◽  
Open Circuit ◽  
Photoconversion Efficiency ◽  
Structural Surface

Nanostructured zinc oxide overlayered by nanoporous strontium titanate was synthesized using sol-gel method and tested in a photoelectrochemical (PEC) cell for splitting of water. It was found that compared to the pristine ZnO and SrTiO 3, the resistivity of bilayered thin film was reduced and a negative shift in open circuit potential and flatband potential of bilayered ZnO/SrTiO 3 was observed, thus improving the photocurrent density and photoconversion efficiency. Significantly, bilayered ZnO/SrTiO 3 thin film offered the best photocurrent density i.e. 0.46 mA/cm2 at 0 V/SCE. XRD, SEM and UV-Vis spectroscopic studies were carried out to explore the structural, surface morphological and optical properties of various thin films.

Properties investigation of thin films photovoltaic hetero-structures

2014 ◽  
Vol 11 (3) ◽  
pp. 233-238 ◽  
Author(s):  
G. Golan ◽  
A. Axelevitch ◽  
Jacob Azoulay
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Thin Film Deposition ◽  
Open Circuit ◽  
Film Deposition ◽  
Photovoltaic Properties ◽  
Silicon Thin Films

This paper presents an experimental investigation of photovoltaic (PV) properties in heterostructures consisting of indium oxide and amorphous silicon thin films, grown on a single crystalline p-type silicon and polyimide flexible substrates. Both thin films: In2O3 and a-Si were deposited by magnetron sputtering. Such heterostructure thin film systems are attractive because of their ability to convert solar energy into electrical one. Grown Heterostructures films were treated by simultaneous influence of an electron beam and high energetic photons with energy more than 1.5 eV in the so called vacuum photo-thermal processing (VPP).Silicon samples of 100 Ω/sq and 45 Ω/sq were selected as substrates. Thin films deposition was done in argon atmosphere by DC magnetron sputtering.It is shown that:Open circuit voltage of the proposed structure may reach up to ~ 0.35 V,Short circuit current was of no more then 10-7 A,Polyimide materials may be used as substrates for PV thin film deposition structures,VPP dramatically varies the photovoltaic properties of the heterostructure

Ultra-smooth TiO2 thin film based optical humidity sensor with a fast response and recovery

2019 ◽  
Vol 58 (36) ◽  
pp. 9740
Author(s):  
Xiaoqing Wang ◽  
Min Lai ◽  
Ruijie Gao ◽  
Xixi Huang ◽  
Ziming Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Humidity Sensor ◽  
Tio2 Thin Film ◽  
Fast Response ◽  
Response And Recovery

Preparation of SnS2, SnS2:Cu, SnS Nanocrystals and Assembly of Thin Film Solar Cell with the Novel Structure of FTO/SnS2:Cu/SnS/Sn

2012 ◽  
Vol 590 ◽  
pp. 35-39
Author(s):  
Min Yao ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Bing Li ◽  
Li Tao
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
The Novel ◽  
Photoelectric Conversion ◽  
Novel Structure

In this paper, SnS2, SnS2:Cu and SnS nanocrystals were prepared by hydrothermal method and the thin film solar cell with the novel structure of FTO/SnS2:Cu/ SnS/Sn was fabricated by dipping-coating technique. The thin film solar cell gave the short circuit photocurrent density of 37.5 μA·cm−2, open circuit voltage of 130 mV, and fill factor of 0.35, corresponding to the photoelectric conversion efficiency of 0.17 %.

Photovoltaic Performance of Thin-Film CdTe for Solar Cell Applications

2021 ◽  
Vol 10 (1) ◽  
pp. 91-97
Author(s):  
A. Hendi ◽  
R. Alkhraif ◽  
H. Alshehri ◽  
F. AlKallas ◽  
M. Almoneef ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Optical Absorption ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Potential Candidate ◽  
Direct Band Gap ◽  
Theoretical Support ◽  
Direct Band

In the current investigation, we report a theoretical study to acquire the highest feasible efficiency of cadmium telluride (CdTe) thin-films. It is well recognized that CdTe crystallizes in cubic zinc-blende structure and its direct band gap of 1.5 eV turned it out as a potential candidate for photovoltaic (PV) applications. Our calculations are founded on Shockley-Queisser (SQ) limit to simulate the open-circuit voltage, current density, and filling factor versus the variation of photon energy up to 4.0 eV. These key parameters of SQ change with the variation of energy between 0.3 to 3.5 eV. This is owing to the strong optical absorption (> 104 cm−1) and direct band gap of 1.5 eV, which make CdTe thin-film suitable for single junction solar cell and ideal for PV applications. It is observed that the optical absorption enhances as the thickness of the absorbed layer increases. This will effectively provide a theoretical support to the industry of global solar energy that is anticipated to be sustainable in the future.

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