scholarly journals Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 522
Author(s):  
Shiben Hu ◽  
Kuankuan Lu ◽  
Honglong Ning ◽  
Rihui Yao ◽  
Yanfen Gong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Film Deposition ◽  
Process Conditions ◽  
Zinc Oxide Film ◽  
Indium Gallium Zinc Oxide ◽  
Substantial Impact ◽  
Indium Gallium

In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

2020 ◽  
Vol 30 (34) ◽  
pp. 2003285 ◽  
Author(s):  
Yepin Zhao ◽  
Zhengxu Wang ◽  
Guangwei Xu ◽  
Le Cai ◽  
Tae‐Hee Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets

RSC Advances ◽  
2015 ◽  
Vol 5 (64) ◽  
pp. 51983-51989 ◽  
Author(s):  
Nidhi Tiwari ◽  
Ram Narayan Chauhan ◽  
Po-Tsun Liu ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Indium Gallium

A co-sputtering of dual InGaZnO and ZnO targets, abbreviated by ZnO co-sputtered IGZO, is used to fabricate a high performance indium gallium zinc oxide (IGZO) thin film transistor in this work.

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

Inkjet printing of homogeneous and green cellulose nanofibril dielectrics for high performance IGZO TFTs

2020 ◽  
Vol 8 (36) ◽  
pp. 12578-12586 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Xiaoping Guo ◽  
Honglong Ning ◽  
Dong Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
High Performance ◽  
Environmentally Friendly ◽  
Indium Gallium Zinc Oxide ◽  
Cellulose Nanofibril ◽  
Functional Nanomaterials ◽  
Indium Gallium

Inkjet printing of environmentally friendly functional nanomaterials for high performance indium–gallium–zinc oxide (IGZO) thin film transistors (TFTs) is highly in demand for the development of inexpensive and green electronics.

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