Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature of 300 °C, a 14-nm-thick GaSb film aggregates, while a 20-nm-thick GaSb film remains continuous with a roughness of 1.74 nm. A GaSb film with a thickness of 20 nm consists of crystalline grains with a size of 9–16 nm. They were compressed by ~2%. For some GaSb grains, new epitaxial relationships have been found: GaSb ( 111 ) ||Si ( 11 1 ¯ ) and GaSb [ 11 2 ¯ ] ||Si [ 1 1 ¯ 0 ] , GaSb ( 113 ) ||Si ( 11 1 ¯ ) and GaSb [ 1 1 ¯ 0 ] ||Si [ 1 1 ¯ 0 ] , and GaSb ( 11 1 ¯ ) ||Si ( 002 ) and GaSb [ 1 1 ¯ 0 ] ||Si [ 1 1 ¯ 0 ] .

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Optical Waveguide Formation by Ion Implantation of Ti or Ag

MRS Proceedings ◽

10.1557/proc-100-311 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 2

Author(s):

D. B. Poker ◽

D. K. Thomas

Keyword(s):

Ion Implantation ◽

Concentration Profile ◽

Optical Waveguides ◽

Annealing Temperature ◽

Solid Phase ◽

Effective Means ◽

Complete Removal ◽

Solid Phase Epitaxy ◽

Annealing Temperatures ◽

Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

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Crystallization Kinetics of Fe-DOPED A1203

MRS Proceedings ◽

10.1557/proc-357-201 ◽

1994 ◽

Vol 357 ◽

Cited By ~ 1

Author(s):

Todd W. Simpson ◽

Ian V. Mitchell ◽

Ning Yu ◽

Michael Nastasi ◽

Paul C. Mcintyre

Keyword(s):

Crystallization Kinetics ◽

Annealing Temperature ◽

Rutherford Backscattering Spectrometry ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Time Resolved ◽

Α Phase ◽

Kinetics Of ◽

Beam Deposition

AbstractTime resolved optical reflectivity (TRR) and Rutherford backscattering spectrometry (RBS) and ion channelling methods have been applied to determine the crystallization kinetics of Fe-doped A1203 in the temperature range of 900-1050°C. Amorphous A1203 films, approximately 250 nm thick and with Fe cation concentrations of 0, 1.85, 2.2 and 4.5%, were formed by e-beam deposition on single crystal, [0001] oriented, A1203 substrates. Annealing was performed under an oxygen ambient in a conventional tube furnace, and the optical changes which accompany crystallization were monitored, in situ, by TRR with a 633nm wavelength laser.Crystallization is observed to proceed via solid phase epitaxy. An intermediate, epitaxial phase of -γ-Al203 is formed before the samples reach the ultimate annealing temperature. The 5% Fe-doped film transforms from γ to α-A1203 at a rate approximately 10 times that of the pure A1203 film and the 1.85% and 2.2% Fe-doped films transform at rates between these two extremes. The Fe-dopants occupy substitional lattice sites in the epilayer. Each of the four sets of specimens displays an activation energy in the range 5.0±0.2eV for the γ,α phase transition.

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Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.629 ◽

2012 ◽

Vol 717-720 ◽

pp. 629-632 ◽

Cited By ~ 3

Author(s):

Enrique Escobedo-Cousin ◽

Konstantin Vassilevski ◽

Irina P. Nikitina ◽

Nicolas G. Wright ◽

Anthony G. O'Neill ◽

...

Keyword(s):

Raman Spectroscopy ◽

Solid Phase ◽

Nickel Silicide ◽

Surface Roughening ◽

Solid Phase Epitaxy ◽

Force Microscopy ◽

Atomic Force ◽

Wet Processing ◽

20 Nm ◽

Few Layer Graphene

Patterned Few Layers Graphene (FLG) films were grown by local solid phase epitaxy from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on the carbon-terminated surface of 6H-SiC semi-insulating wafer followed by wet processing to remove the resulting nickel silicide. Raman spectroscopy was used to investigate both the formation and subsequent removal of nickel silicide during processing. Characterisation of the resulting FLG films was carried out by Raman spectroscopy and Atomic Force Microscopy (AFM). The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 3 monolayers for initial Ni layers varying from 3 to 20 nm thick. AFM observations revealed process-induced surface roughening in FLG films, however, electrical conductivity measurements by Transmission Line Model (TLM) structures confirmed that roughness does not compromise the film sheet resistance.

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Effects of Annealing Temperature on the Properties of Solid Phase Epitaxy YIG Films

Journal of the Korean Magnetics Society ◽

10.4283/jkms.2003.13.6.221 ◽

2003 ◽

Vol 13 (6) ◽

pp. 221-225

Keyword(s):

Annealing Temperature ◽

Solid Phase ◽

Solid Phase Epitaxy

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Solid Phase Epitaxy Process Of Ar-Ion Bombarded Silicon Surfaces and Recovery of Crystallinity by Thermal Annealing Observed With Scanning Tunneling Microscopy

MRS Proceedings ◽

10.1557/proc-321-497 ◽

1993 ◽

Vol 321 ◽

Author(s):

Katsuhiro Uesugi ◽

Masamichi Yoshimura ◽

Takafumi Yao

Keyword(s):

Thermal Annealing ◽

Annealing Temperature ◽

Solid Phase ◽

Amorphous Layer ◽

Silicon Surfaces ◽

Scanning Tunneling ◽

Layer By Layer ◽

Solid Phase Epitaxy ◽

Tunneling Microscopy ◽

Reconstructed Surface

ABSTRACTThe solid-phase epitaxy (SPE) process of Ar+-ion bombarded Si (001) surfaces and recovery of crystallinity by thermal annealing are studied “in situ” by using a scanning tunneling Microscope (STM). As-bombarded surfaces consist of grains of 0.63–1.6 nm in diameter. The grains gradually coalesce and form clusters of 2–3.6 nm in diameter at annealing temperature of 245° C (2×1) and (1×2) reconstructed regions surrounded by amorphous regions are partially observed on the surface by prolonged annealing, which suggests the onset of SPE. Successive observation reveals that the smoothing of the surface occurs layer by layer. As annealing temperature is raised up to 445 °C, the amorphous layer epitaxially crystallizes up to the topmost surface, and (2×1) reconstructed surface with Monatomic-height steps is observed. The smoothing of the surface structures and the formation of nucleation of Si islands are observed during annealing at 500 °C.

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Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy

Electronics and Communications in Japan (Part II Electronics) ◽

10.1002/ecjb.1029.abs ◽

2001 ◽

Vol 84 (5) ◽

pp. 55-61

Author(s):

Masahito Kodama ◽

Takahide Sugiyama ◽

Tutomu Uesugi

Keyword(s):

Solid Phase ◽

Parameter Dependence ◽

Solid Phase Epitaxy ◽

Power Mosfet ◽

Temperature Characteristics ◽

Device Parameter

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Influence of Cu on the Improvement of Magnetic Properties and Structure of L10 FePt Nanoparticles

Nanomaterials ◽

10.3390/nano11051097 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1097

Author(s):

Luran Zhang ◽

Xinchen Du ◽

Hongjie Lu ◽

Dandan Gao ◽

Huan Liu ◽

...

Keyword(s):

Magnetic Properties ◽

Annealing Temperature ◽

Reduction Method ◽

Solid Phase ◽

Average Particle Size ◽

Fept Nanoparticles ◽

Average Particle ◽

Phase Reduction ◽

Different Temperatures ◽

One Step

L10 ordered FePt and FePtCu nanoparticles (NPs) with a good dispersion were successfully fabricated by a simple, green, one-step solid-phase reduction method. Fe (acac)3, Pt (acac)2, and CuO as the precursors were dispersed in NaCl and annealed at different temperatures with an H2-containing atmosphere. As the annealing temperature increased, the chemical order parameter (S), average particle size (D), coercivity (Hc), and saturation magnetization (Ms) of FePt and FePtCu NPs increased and the size distribution range of the particles became wider. The ordered degree, D, Hc, and Ms of FePt NPs were greatly improved by adding 5% Cu. The highest S, D, Hc, and Ms were obtained when FePtCu NPs annealed at 750 °C, which were 0.91, 4.87 nm, 12,200 Oe, and 23.38 emu/g, respectively. The structure and magnetic properties of FePt and FePtCu NPs at different annealing temperatures were investigated and the formation mechanism of FePt and FePtCu NPs were discussed in detail.

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