scholarly journals Development of Micron Sized Photonic Devices Based on Deep GaN Etching

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 68
Author(s):  
Karim Dogheche ◽  
Bandar Alshehri ◽  
Galles Patriache ◽  
Elhadj Dogheche

In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate performances. In our reported research activity, dry etching of an InGaN/GaN heterogeneous structure was investigated by using an inductively coupled plasma reactive ion etching (ICP-RIE). We considered different combinations of etch mask (Ni, SiO2, resist), focussing on the optimization of the deep etching process. A GaN mesa process with an etching depth up to 6 µm was performed in Cl2/Ar-based plasmas using ICP reactors for LEDs dimen sions ranging from 5 to 150 µm². Our strategy was directed toward the mesa formation for vertical-type diode applications, where etch depths are relatively large. Etch characteristics were studied as a function of ICP parameters (RF power, chamber pressure, fixed total flow rate). Surface morphology, etch rates and sidewall profiles observed into InGaN/GaN structures were compared under different types of etching masks. For deep etching up to few microns into the GaN template, we state that a Ni or SiO2 mask is more suitable to obtain a good selectivity and vertical etch profiles. The optimized etch rate was about 200nm/min under moderate ICP conditions. We applied these conditions for the fabrication of micro/nano LEDs dedicated to LiFi applications.

1998 ◽  
Vol 512 ◽  
Author(s):  
R. J. Shul ◽  
C. I. H. Ashby ◽  
C. G. Willison ◽  
L. Zhang ◽  
J. Han ◽  
...  

ABSTRACTGaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaClx and NClx etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, we report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl3:Cl2 flow ratio, dc-bias, chamber pressure, and ICP source power. GaN etch rates ranging from ∼100 Å/min to > 8000 Å/min were obtained with smooth etch morphology and anisotropic profiles.


Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1033
Author(s):  
Simen Mikalsen Martinussen ◽  
Raimond N. Frentrop ◽  
Meindert Dijkstra ◽  
Sonia Maria Garcia-Blanco

KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO4)2 can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO4)2 as well as thin KY(WO4)2 membranes transferred onto glass substrate by bonding and subsequent polishing.


2010 ◽  
Vol 09 (04) ◽  
pp. 311-315
Author(s):  
G. Y. SI ◽  
A. J. DANNER ◽  
J. H. TENG ◽  
S. S. ANG ◽  
A. B. CHEW ◽  
...  

Channel waveguides have been fabricated in x-cut lithium niobate (LiNbO3) by proton exchange (PE) method and optically measured. The thickness and the optical constants of the thin PE layer were characterized using a prism coupling technique. The PE area was plasma etched and a 2.775-μm total etching depth was achieved. The measured average etching rate is 92.5 nm/min. One- and two-dimensional dense arrays of LiNbO3 nanostructures have also been fabricated by using interference lithography (IL) and inductively coupled plasma reactive ion etching (ICP-RIE) techniques.


2011 ◽  
Vol 257 (7) ◽  
pp. 2700-2706 ◽  
Author(s):  
Rongfu Qiu ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Rong Zhang ◽  
Youdou Zheng

2010 ◽  
Vol 28 (5) ◽  
pp. 1226-1233 ◽  
Author(s):  
J. Ladroue ◽  
A. Meritan ◽  
M. Boufnichel ◽  
P. Lefaucheux ◽  
P. Ranson ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 657 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
Pengfei Li ◽  
...  

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic profile of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10−8 A/cm2 at −10 V.


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