scholarly journals Tuning Material Properties of ZnO Thin Films for Advanced Sensor Applications

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 740 ◽  
Author(s):  
Julian Pilz ◽  
Alberto Perrotta ◽  
Anna Maria Coclite
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Material Properties ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Effect Of Temperature ◽  
Sensors And Actuators ◽  
Sensor Applications ◽  
Layer Deposition ◽  
Wide Range

We report on the growth of ZnO thin films by plasma-enhanced atomic layer deposition as a function of substrate temperature. The method to ensure self-limiting growth with precise thickness control is discussed and the effect of temperature on the texture of the thin films is presented. Switching the texture from (100) to (002) by increasing the substrate temperature is a key property for functional devices. The ZnO thin films with tailored properties could find applications in a wide range of sensors and actuators.

scholarly journals Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer Deposition Process

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 459 ◽  
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Tao Sun ◽  
Chia-Hsun Hsu ◽  
Pao-Hsun Huang ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Atomic Layer ◽  
Infrared Light ◽  
Zno Thin Films ◽  
Process Window ◽  
Layer Deposition

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2–9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.

scholarly journals Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

2018 ◽  
Vol 36 (1) ◽  
pp. 01A109 ◽  
Author(s):  
Julian Pilz ◽  
Alberto Perrotta ◽  
Paul Christian ◽  
Martin Tazreiter ◽  
Roland Resel ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Material Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Usingthe Zn Alkoxide Precursor Methylzinc Isopropoxide

2008 ◽  
Vol 8 (9) ◽  
pp. 4856-4859 ◽  
Author(s):  
Ki-Seok An ◽  
Wontae Cho ◽  
Byung Kook Lee ◽  
Sun Sook Lee ◽  
Chang Gyoun Kim
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Deep Level ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

Undoped and Al-doped ZnO thin films have been prepared by atomic layer deposition (ALD) using the Zn precursor methylzinc isopropoxide [MZI, (CH3)Zn(OCH(CH3)2)] with water (H2O). Dimethylaluminum isopropoxide (DMAI) was used as an Al precursor. The self-limiting ALD process via alternate surface reactions of MZI and H2O was confirmed by thickness measurements of the ZnO films with varying MZI supply time and numbers of MZI-H2O ALD cycles. Under optimal reaction conditions, the growth rate of the ZnO films was 1.9∼2.0 Å/cycle in the substrate temperature range of 160∼200 °C and the maximum growth rate reached about 2.58 Å/cycle at 240 °C. Room temperature photoluminescence (PL) measurements revealed a strong free excitonic peak at 3.27 eV with almost negligible deep level emission. Resistivities of ZnO films were measured to be 5 × 10−3 ∼3.2 × 10−3 Ωcm depending on the substrate temperature. By Al-doping, the resistivity was minimized to ∼1 35 × 10−4 Ωcm.

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Boron Doped ◽  
Layer Deposition ◽  
Doped Zno
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