scholarly journals V2O5 Thin Films as Nitrogen Dioxide Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 759
Author(s):  
Krystyna Schneider ◽  
Wojciech Maziarz
Keyword(s):  
Thin Films ◽  
Nitrogen Dioxide ◽  
Gas Sensing ◽  
Optical Transmittance ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
Gas Sensing Properties ◽  
Oxygen Gas ◽  
V2o5 Thin Films ◽  
Phase Characterization

V2O5 thin films were deposited onto insulating support (either fused silica or alumina) by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Optical transmittance and reflectance spectra were recorded with a Lambda 19 Perkin-Elmer double spectrophotometer. Thickness of the films was determined from the profilometry. It has been confirmed by GIXD that the deposited films are composed of V2O5 phase. The estimated optical band gap was ca. 2.5 eV. The gas sensing properties of V2O5 thin films were investigated at RT-690 K towards NO2 gas of 0–20 ppm. The results indicated that material exhibited good response and reversibility towards nitrogen dioxide.

scholarly journals V2O5 Thin Films as Nitrogen Dioxide Sensors †

Sensors ◽  
2018 ◽  
Vol 18 (12) ◽  
pp. 4177 ◽  
Author(s):  
Krystyna Schneider ◽  
Wojciech Maziarz
Keyword(s):  
Thin Films ◽  
Nitrogen Dioxide ◽  
Gas Sensing ◽  
Insulator Transition ◽  
X Ray Diffraction ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Sensor Performance ◽  
V2o5 Thin Films ◽  
Phase Characterization

Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V2O5 phase. The gas sensing properties of V2O5 thin films were investigated at temperatures from range 410–617 K upon NO2 gas of 4–20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.

scholarly journals Structural And Optical Properties Of VOx Thin Films

2015 ◽  
Vol 60 (2) ◽  
pp. 957-961 ◽  
Author(s):  
K. Schneider
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Transmittance ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Corning Glass ◽  
Oxygen Gas ◽  
Deposited Films

Abstract VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated. Structural properties of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD. Optical transmittance and reflectance spectra were recordedwith a Lambda 19 Perkin-Elmer double spectrophotometer. Thickness of the films was determined from the profilometry. It has been confirmed by XRD that the deposited films are composed mainly of V2O5 phase. The estimated optical band gap of 2.5 eV corresponds to V2O5.

Polyaniline/SnO2 Nanocomposite Sensor for NO2 Gas Sensing at Low Operating Temperature

2015 ◽  
Vol 14 (04) ◽  
pp. 1550011 ◽  
Author(s):  
A. Sharma ◽  
M. Tomar ◽  
V. Gupta ◽  
A. Badola ◽  
N. Goswami
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
High Sensitivity ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Chemical Route ◽  
Sensing Properties ◽  
Response Recovery ◽  
Transmission Electron ◽  
Gas Sensing Properties

In this paper gas sensing properties of 0.5–3% polyaniline (PAni) doped SnO 2 thin films sensors prepared by chemical route have been studied towards the trace level detection of NO 2 gas. The structural, optical and surface morphological properties of the PAni doped SnO 2 thin films were investigated by performing X-ray diffraction (XRD), Transmission electron microscopy (TEM) and Raman spectroscopy measurements. A good correlation has been identified between the microstructural and gas sensing properties of these prepared sensors. Out of these films, 1% PAni doped SnO 2 sensor showed high sensitivity towards NO 2 gas along with a sensitivity of 3.01 × 102 at 40°C for 10 ppm of gas. On exposure to NO 2 gas, resistance of all sensors increased to a large extent, even greater than three orders of magnitude. These changes in resistance upon removal of NO 2 gas are found to be reversible in nature and the prepared composite film sensors showed good sensitivity with relatively faster response/recovery speeds.

scholarly journals Chemically synthesized PbS Nano particulate thin films for a rapid NO2 gas sensor

2016 ◽  
Vol 34 (1) ◽  
pp. 204-211 ◽  
Author(s):  
Vishal V. Burungale ◽  
Rupesh S. Devan ◽  
Sachin A. Pawar ◽  
Namdev S. Harale ◽  
Vithoba L. Patil ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Gas Sensitivity ◽  
Silar Method ◽  
Layer Adsorption ◽  
Gas Sensing Properties

AbstractRapid NO2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO2 gas was measured at different operating temperatures, from 50 to 200 °C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 °C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO2 at 150 °C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

Preparation and Characterization of SnO2 Thin Film Gas Sensor for NOx Gas for Environmental Monitoring

2007 ◽  
Vol 124-126 ◽  
pp. 223-226 ◽  
Author(s):  
Md. Mosharaf Hossain Bhuiyan ◽  
Tsuyoshi Ueda ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Sensing ◽  
Sno2 Thin Film ◽  
Interdigitated Electrodes ◽  
Undoped Sno2 ◽  
Gas Sensing Properties ◽  
Sno2 Thin Films ◽  
Oxygen Gas

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.

Mo-W-O thin films for CO sensing

2000 ◽  
Vol 638 ◽  
Author(s):  
Elisabetta Comini ◽  
Matteo Ferroni ◽  
Vincenzo Guidi ◽  
Giuliano Martinelli ◽  
Michele Sacerdoti ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Weight Ratio ◽  
X Ray Diffraction ◽  
Composite Target ◽  
X Ray ◽  
Structural Characterisation ◽  
Gas Sensing Properties ◽  
Recovery Times ◽  
Response And Recovery

AbstractThe Mo-W-O thin films were deposited by RF reactive sputtering from composite target of W and Mo (20:80 weight ratio). Structural characterisation was carried out by X-ray diffraction spectroscopy and the composition of the film was obtained by Rutherford backscattering analysis. The layers were investigated by volt-amperometric technique for electrical and gas-sensing properties. The films were capable of sensing CO. No effect of poisoning of the surface was recorded and recovery of the resistance was complete. A concentration of CO as low as 15 ppm produced a relative variation in the conductance of 390% with response and recovery times of about 2 minutes at a working temperature of 200°C.

Effect of substrate temperature on physicochemical and gas sensing properties of sprayed orthorhombic V2O5 thin films

Measurement ◽  
2019 ◽  
Vol 131 ◽  
pp. 223-234 ◽  
Author(s):  
A.A. Mane ◽  
P.S. Maldar ◽  
S.H. Dabhole ◽  
S.A. Nikam ◽  
A.V. Moholkar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Gas Sensing ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
V2o5 Thin Films

Low-Temperature Synthesis and Gas Sensing Properties of Anatase TiO2 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 300-303
Author(s):  
Fu Jian Ren ◽  
Yi Sun ◽  
Liang Huang ◽  
Yun Han Ling ◽  
Jia You Feng
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Gas Sensing ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Gas Sensing Properties ◽  
Gas Response

Crystalline anatase TiO2thin films were obtained on glass substrates at 60°C, 75°C and 90°C, respectively, by liquid phase deposition (LPD) method without subsequent heat treatment. X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-Vis spectrophotometer were used to characterize the as-synthesized TiO2thin films. The H2sensing properties of the TiO2thin films based sensors were investigated. The results show that the gas sensors signal Ra/Rg (Ra: resistance in air, Rg: resistance in a sample gas) decreases with the increasing deposition temperature. The TiO2thin films obtained at deposition temperature of 60°C exhibited the maximum H2gas response at 350°C, and the magnitude of the sensor signal and the response time for 500ppm H2was 1.25 and 17s, respectively.

Annealing Temperature Dependent on Microstructure and Ethanol Gas Sensing Properties of TiO2Thin Films

2013 ◽  
Vol 770 ◽  
pp. 213-216
Author(s):  
Benjarong Samransuksamer ◽  
Worawarong Rakreungdet ◽  
Supattanapong Dumrongrattana ◽  
M. Horprathum ◽  
Pitak Eiamchai ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Gas Sensing ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Sensing Properties ◽  
Dc Reactive Magnetron Sputtering ◽  
Gas Sensing Properties ◽  
Microstructure Morphology ◽  
Deposited Films

The TiO2 thin films were prepared by a dc reactive magnetron sputtering technique from high purity Ti target on silicon (100) wafers and alumina substrates inter-digital with gold electrodes. The as-deposited films were annealed from 400°C up to 800°C with 100 °C steps for 1 hour in air ambience in order to promote microstructure, morphology and gas-sensing properties. The change in microstructure and morphology of the films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The enhancement in the gas-sensing properties was test by ethanol gas. The prepared thin films were exposed to ethanol gas at concentration 1,000 ppm in purify dry air carrier. The resistance was measured as a function of the ethanol concentration of the films at operated temperatures in the range of 250 - 350°C. The influence of annealing temperature at 500 °C of TiO2 thin film has a highest sensitivity at 350 °C operated temperature.

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