scholarly journals A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing

Sensors ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 1788 ◽  
Author(s):  
Tao Wang ◽  
Zhengjie Tang ◽  
Huamao Lin ◽  
Kun Zhan ◽  
Jiang Wan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Acoustic Wave ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Absolute Pressure ◽  
Temperature Drift ◽  
Wave Pressure ◽  
The Absolute ◽  
Vacuum Cavity

In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 °C to 220 °C with a TCF of −14.4 ppm/°C. Such a TCF is only about half of that of previously reported works.

Humidity-Induced Voltage Shift on MEMS Pressure Sensors

2003 ◽  
Vol 125 (4) ◽  
pp. 470-474 ◽  
Author(s):  
J. Albert Chiou ◽  
Steven Chen ◽  
Jinbao Jiao
Keyword(s):  
Pressure Sensor ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Anodic Bonding ◽  
Absolute Pressure ◽  
Stress Effect ◽  
Induced Voltage ◽  
Voltage Shift ◽  
Mems Pressure Sensors ◽  
Vacuum Cavity

The pressure sensor is one of the major applications of microelectromechanical systems (MEMS). An absolute pressure sensor utilizes anodic bonding to create a vacuum cavity between the silicon diaphragm and glass substrate. The manifold absolute pressure (MAP) sensing elements from a new supplier have exhibited negative voltage shifts after exposure to humidity. A hypothesis has been established that poor anodic bonding causes an angstrom-level gap between the silicon substrate and glass. Once moisture enters the gap in a vapor form and condenses as water droplets, surface tension can induce a piezoresistive stress effect that causes an unacceptable voltage shift. Finite element analyses were performed to simulate the phenomenon and the results correlated well with experimental observations.

Highly sensitive thick diaphragm-based surface acoustic wave pressure sensor

2021 ◽  
pp. 112935
Author(s):  
Maria Muzamil Memon ◽  
Shuliang Pan ◽  
Jiang Wan ◽  
Tao Wang ◽  
Wanli Zhang
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Wave Pressure ◽  
Highly Sensitive

ZnO/quartz structure potentiality for surface acoustic wave pressure sensor

2006 ◽  
Vol 128 (1) ◽  
pp. 78-83 ◽  
Author(s):  
A. Talbi ◽  
F. Sarry ◽  
M. Elhakiki ◽  
L. Le Brizoual ◽  
O. Elmazria ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Wave Pressure

scholarly journals A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 337 ◽  
Author(s):  
Peishuai Song ◽  
Chaowei Si ◽  
Mingliang Zhang ◽  
Yongmei Zhao ◽  
Yurong He ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Blood Pressure Measurement ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Bonding Layer ◽  
Chip Area ◽  
Piezoresistive Pressure Sensor ◽  
Temporary Bonding ◽  
Bonding Technology ◽  
Sensing Membrane

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

A SOI-MEMS Piezoresistive Atmosphere Pressure Sensor

2013 ◽  
Vol 562-565 ◽  
pp. 394-397
Author(s):  
Li Dong Du ◽  
Zhan Zhao ◽  
Li Xiao ◽  
Meng Ying Zhang ◽  
Zhen Fang
Keyword(s):  
Silicon Wafer ◽  
Pressure Sensor ◽  
Strain Gauge ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Atmosphere Pressure ◽  
Piezoresistive Pressure Sensor ◽  
The Cost

In this paper, a SOI-MEMS (silicon on insulator- micro electro mechanical system) pizeoresistive atmosphere pressure sensor is presented using anodic bonding. Differently from the prevailing fabrication process of silicon piezoresistive pressure sensor: the device layer monocrystalline of SOI silicon wafer is used as the strain gauge with a simple deep etching process; and the SiO2 layer of SOI silicon wafer as the insulator between strain gauge and substrate. The whole fabrication processes of the designed sensor are very simple, and can reduce the cost of sensor. The Pressure-Voltage characteristic test results suggest a precision within 0.14% in linear fitting. It is shown that the temperature coefficient is 2718ppm/°C from the Typical temperature curve of the pressure sensors.

scholarly journals Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 379
Author(s):  
Baohua Tian ◽  
Haiping Shang ◽  
Lihuan Zhao ◽  
Dahai Wang ◽  
Yang Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Absolute Pressure ◽  
Microstructure Observation ◽  
Thermal Expansion Coefficients ◽  
Piezoresistive Pressure Sensor ◽  
Cavity Structure ◽  
Sic Wafer ◽  
Temperature Applications

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.

Technology and Application of 3D Shaped LTCC Modules for Pressure Sensors and Microsystems

2009 ◽  
Vol 6 (3) ◽  
pp. 158-163 ◽  
Author(s):  
Stanislav Slosarčík ◽  
Igor Vehec ◽  
Alexander Gmiterko ◽  
Pavol Cabúk ◽  
Michal Jurčišin
Keyword(s):  
Low Temperature ◽  
Thick Film ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Film Pressure ◽  
Cofired Ceramics ◽  
Bending Angles

This paper deals with shaping technology of LTCC (low temperature cofired ceramics) and as well on analysis of the possibilities of sensors in 3D shaped modules. Analysis of marginal possibilities of LTCC ceramic shaping was realized on a sample with various bending angles and various layer numbers, where thick-film conductive paths were present. The applicability of the obtained results was demonstrated by the development of a 3D shaped module with a thick-film pressure sensor.

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