scholarly journals The Effects of Temperature on the Growth of a Lead-Free Perovskite-Like (CH3NH3)3Sb2Br9 Single Crystal for An MSM Photodetector Application

Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4475
Author(s):  
Chien-Min Hun ◽  
Ching-Ho Tien ◽  
Kuan-Lin Lee ◽  
Hong-Ye Lai ◽  
Lung-Chien Chen
Keyword(s):  
Single Crystal ◽  
Precursor Solution ◽  
Charge Carrier Mobility ◽  
Lead Free ◽  
Optimum Growth Temperature ◽  
Photosensitive Layer ◽  
Msm Photodetector ◽  
Effects Of Temperature ◽  
High Charge Carrier Mobility ◽  
Temperature Crystallization

We have fabricated a photodetector based on (CH3NH3)3Sb2Br9 (MA3Sb2Br9) lead-free perovskite-like single crystal, which plays an important role in the optoelectronic characteristics of the photodetector as a perovskite-like photosensitive layer. Here, MA3Sb2Br9 single crystals were synthesized by an inverse temperature crystallization process with a precursor solution at three different growth temperatures, 60 °C, 80 °C, and 100 °C. As a result, a MA3Sb2Br9 single crystal with an optimum growth temperature of 60 °C presented a low trap density of 2.63 × 1011 cm−3, a high charge carrier mobility of 0.75 cm2 V−1 s−1, and excellent crystal structure and optical absorption properties. This MA3Sb2Br9 perovskite-like photodetector displayed a low dark current of 8.09 × 10−9 A, high responsivity of 0.113 A W−1, and high detectivity of 4.32 × 1011 Jones.

Precursor solution dependent secondary phase defects in CsPbBr3 single crystal grown by inverse temperature crystallization

2021 ◽  
Author(s):  
Yuanbo Cheng ◽  
Menghua Zhu ◽  
Fangbao Wang ◽  
Ruichen Bai ◽  
Jinshan Yao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Precursor Solution ◽  
Secondary Phase ◽  
Inverse Temperature ◽  
Crystalline Defects ◽  
Temperature Crystallization

The understanding and tailoring of crystalline defects have been a cornerstone of established semiconductors technological deployment. Here, we report the secondary phase (SP) defects of CsPb2Br5 in CsPbBr3 crystals grown...

Enhanced Photocurrent Response Speed in Charge-Density-Wave Phase of TiSe2-Metal Junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Thayer Walmsley ◽  
Yaqiong Xu
Keyword(s):  
Carrier Mobility ◽  
Density Wave ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Charge Carrier Mobility ◽  
Metal Dichalcogenides ◽  
Charge Density Wave Phase ◽  
Large Sheet ◽  
High Charge Carrier Mobility ◽  
Significant Attention

Group IVB transition metal dichalcogenides (TMDCs) have attracted significant attention due to their predicted high charge carrier mobility, large sheet current density, and enhanced thermoelectric power. Here, we investigate the...

scholarly journals Dark Self-Healing-Mediated Negative Photoconductivity of a Lead-Free Cs3Bi2Cl9 Perovskite Single Crystal

2021 ◽  
pp. 2286-2292
Author(s):  
Naveen Kumar Tailor ◽  
Partha Maity ◽  
Makhsud I. Saidaminov ◽  
Narayan Pradhan ◽  
Soumitra Satapathi
Keyword(s):  
Single Crystal ◽  
Lead Free ◽  
Self Healing ◽  
Negative Photoconductivity

scholarly journals Recent Advances and Challenges in Halide Perovskite Crystals in Optoelectronic Devices from Solar Cells to Other Applications

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 39
Author(s):  
Seunghyun Rhee ◽  
Kunsik An ◽  
Kyung-Tae Kang
Keyword(s):  
Solar Cells ◽  
Optoelectronic Devices ◽  
Charge Carrier Mobility ◽  
Light Emitting ◽  
Fundamental Properties ◽  
Perovskite Materials ◽  
Hybrid Perovskite ◽  
Band Position ◽  
Different Characteristics ◽  
High Charge Carrier Mobility

Organic-inorganic hybrid perovskite materials have attracted tremendous attention as a key material in various optoelectronic devices. Distinctive optoelectronic properties, such as a tunable energy band position, long carrier diffusion lengths, and high charge carrier mobility, have allowed rapid progress in various perovskite-based optoelectronic devices (solar cells, photodetectors, light emitting diodes (LEDs), and lasers). Interestingly, the developments of each field are based on different characteristics of perovskite materials which are suitable for their own applications. In this review, we provide the fundamental properties of perovskite materials and categorize the usages in various optoelectronic applications. In addition, the prerequisite factors for those applications are suggested to understand the recent progress of perovskite-based optoelectronic devices and the challenges that need to be solved for commercialization.

Room-temperature discotic liquid-crystalline coronene diimides exhibiting high charge-carrier mobility in air

2009 ◽  
Vol 19 (37) ◽  
pp. 6688 ◽  
Author(s):  
Zesheng An ◽  
Junsheng Yu ◽  
Benoit Domercq ◽  
Simon C. Jones ◽  
Stephen Barlow ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Mobility ◽  
Liquid Crystalline ◽  
Room Temperature ◽  
Charge Carrier Mobility ◽  
High Charge ◽  
High Charge Carrier Mobility

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

2017 ◽  
Vol 51 (4) ◽  
pp. 488-491 ◽  
Author(s):  
A. V. Emelianov ◽  
A. V. Romashkin ◽  
K. A. Tsarik ◽  
A. G. Nasibulin ◽  
V. K. Nevolin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
High Charge ◽  
High Charge Carrier Mobility

Isoindigo-based polymer field-effect transistors: effects of selenophene-substitution on high charge carrier mobility

2015 ◽  
Vol 51 (38) ◽  
pp. 8120-8122 ◽  
Author(s):  
Kwang Hun Park ◽  
Kwang Hee Cheon ◽  
Yun-Ji Lee ◽  
Dae Sung Chung ◽  
Soon-Ki Kwon ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
High Charge ◽  
Crystalline Order ◽  
High Charge Carrier Mobility

The selenophene-substitution can lead to a higher crystalline order as well as a high charge carrier mobility in isoindigo-based polymers.

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