scholarly journals Electronic Skin from High-Throughput Fabrication of Intrinsically Stretchable Lead Zirconate Titanate Elastomer

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-11 ◽  
Author(s):  
Yiming Liu ◽  
Huanxi Zheng ◽  
Ling Zhao ◽  
Shiyuan Liu ◽  
Kuanming Yao ◽  
...  

Electronic skin made of thin, soft, stretchable devices that can mimic the human skin and reconstruct the tactile sensation and perception offers great opportunities for prosthesis sensing, robotics controlling, and human-machine interfaces. Advanced materials and mechanics engineering of thin film devices has proven to be an efficient route to enable and enhance flexibility and stretchability of various electronic skins; however, the density of devices is still low owing to the limitation in existing fabrication techniques. Here, we report a high-throughput one-step process to fabricate large tactile sensing arrays with a sensor density of 25 sensors/cm2 for electronic skin, where the sensors are based on intrinsically stretchable piezoelectric lead zirconate titanate (PZT) elastomer. The PZT elastomer sensor arrays with great uniformity and passive-driven manner enable high-resolution tactile sensing, simplify the data acquisition process, and lower the manufacturing cost. The high-throughput fabrication process provides a general platform for integrating intrinsically stretchable materials into large area, high device density soft electronics for the next-generation electronic skin.

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 944
Author(s):  
Youcao Ma ◽  
Jian Song ◽  
Xubo Wang ◽  
Yue Liu ◽  
Jia Zhou

Compared to aluminum nitride (AlN) with simple stoichiometry, lead zirconate titanate thin films (PZT) are the other promising candidate in advanced micro-electro-mechanical system (MEMS) devices due to their excellent piezoelectric and dielectric properties. The fabrication of PZT thin films with a large area is challenging but in urgent demand. Therefore, it is necessary to establish the relationships between synthesis parameters and specific properties. Compared to sol-gel and pulsed laser deposition techniques, this review highlights a magnetron sputtering technique owing to its high feasibility and controllability. In this review, we survey the microstructural characteristics of PZT thin films, as well as synthesis parameters (such as substrate, deposition temperature, gas atmosphere, and annealing temperature, etc.) and functional proper-ties (such as dielectric, piezoelectric, and ferroelectric, etc). The dependence of these influential factors is particularly emphasized in this review, which could provide experimental guidance for researchers to acquire PZT thin films with expected properties by a magnetron sputtering technique.


2013 ◽  
Vol 3 (12) ◽  
pp. 1539-1544 ◽  
Author(s):  
Kwi-Il Park ◽  
Chang Kyu Jeong ◽  
Jungho Ryu ◽  
Geon-Tae Hwang ◽  
Keon Jae Lee

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Iñigo Bretos ◽  
Ricardo Jiménez ◽  
Monika Tomczyk ◽  
Enrique Rodríguez-Castellón ◽  
Paula M. Vilarinho ◽  
...  

Abstract Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrates at temperatures well below the standard CMOS process of semiconductor technology. The method, potentially transferable to a broader range of Zr:Ti ratios, is based on the addition of crystalline nanoseeds to photosensitive solutions of PZT resulting in perovskite crystallization from only 350 °C after the enhanced decomposition of metal precursors in the films by UV irradiation. A remanent polarization of 10.0 μC cm−2 is obtained for these films that is in the order of the switching charge densities demanded for FeRAM devices. Also, a dielectric constant of ~90 is measured at zero voltage which exceeds that of current single-oxide candidates for capacitance applications. The multifunctionality of the films is additionally demonstrated by their pyroelectric and piezoelectric performance. The potential integration of PZT layers at such low fabrication temperatures may redefine the concept design of classical microelectronic devices, besides allowing inorganic ferroelectrics to enter the scene of the emerging large-area, flexible electronics.


Author(s):  
M.L.A. Dass ◽  
T.A. Bielicki ◽  
G. Thomas ◽  
T. Yamamoto ◽  
K. Okazaki

Lead zirconate titanate, Pb(Zr,Ti)O3 (PZT), ceramics are ferroelectrics formed as solid solutions between ferroelectric PbTiO3 and ant iferroelectric PbZrO3. The subsolidus phase diagram is shown in figure 1. PZT transforms between the Ti-rich tetragonal (T) and the Zr-rich rhombohedral (R) phases at a composition which is nearly independent of temperature. This phenomenon is called morphotropism, and the boundary between the two phases is known as the morphotropic phase boundary (MPB). The excellent piezoelectric and dielectric properties occurring at this composition are believed to.be due to the coexistence of T and R phases, which results in easy poling (i.e. orientation of individual grain polarizations in the direction of an applied electric field). However, there is little direct proof of the coexistence of the two phases at the MPB, possibly because of the difficulty of distinguishing between them. In this investigation a CBD method was found which would successfully differentiate between the phases, and this was applied to confirm the coexistence of the two phases.


2020 ◽  
Author(s):  
Dixiong Wang ◽  
Sinan Dursun ◽  
Lisheng Gao ◽  
Carl S. Morandi ◽  
Clive A. Randall ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document