Laser power density effect on the properties of Sb2S3 thin films prepared by pulsed laser assisted chemical bath deposition

Antimony Sulfide (Sb2S3) thin films were prepared using the laser assisted chemical bath deposition technique. The precursors used in the chemical bath were antimony chloride and sodium thiosulfate, the deposit was made at room temperature on glass substrate, while it was irradiated with a wavelength of 532 nm of the pulsed Nd:YAG laser. In this work, we studied the effects of energy density (1.97 x 107 and 7.07 x 106 W/cm2) and the irradiation time (30, 45 and 60 min) during the deposition process on the structure and the optical and electrical properties of the antimony sulfide films. The structure, composition, and optical and electrical properties were analyzed by X-Ray Diffraction (XRD), Raman Spectroscopy and X-Ray Emitted Photoelectron Spectroscopy (XPS), UV-Vis spectroscopy and photoconductivity. The results showed that the laser assisted chemical deposition technique is an effective synthesis technique for obtaining thin films of antimony sulfide for optoelectronic applications or in solar cells.

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Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

Applied Surface Science ◽

10.1016/j.apsusc.2017.08.027 ◽

2018 ◽

Vol 427 ◽

pp. 1099-1106 ◽

Cited By ~ 18

Author(s):

F.E. Loranca-Ramos ◽

C.J. Diliegros-Godines ◽

R. Silva González ◽

Mou Pal

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Chemical Bath Deposition ◽

Optical And Electrical Properties ◽

Antimony Sulfide ◽

Single Chemical

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Effect of deposition temperature on structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition

Materials Science-Poland ◽

10.1515/msp-2017-0056 ◽

2017 ◽

Vol 35 (2) ◽

pp. 329-334 ◽

Cited By ~ 2

Author(s):

V. Balasubramanian ◽

P. Naresh Kumar ◽

D. Sengottaiyan

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Chemical Bath Deposition ◽

Deposition Temperature ◽

Optical And Electrical Properties ◽

X Ray ◽

Glass Substrates ◽

Time Period ◽

Hall Effect Measurements ◽

C 50

Abstract The effect of deposition temperature on the structural, optical and electrical properties of copper bismuth sulphide (CuBiS2) thin films deposited by chemical bath deposition onto glass substrates at different deposition temperatures (40 °C, 50 °C, 60 °C and 70 °C) for 5 hours deposition time period was investigated. The obtained films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption spectra. All deposited films were polycrystalline and had an orthorhombic structure. Their grain size had changed with deposition temperature and their compositions were nearly stoichiometric. The optical band gap value was decreased from 2.44 eV to 2.33 eV with increasing the film thickness. Electrical parameters such as mobility and type of electrical conduction were determined from the Hall effect measurements. They showed that the obtained films have n-type conductivity and mobility values of the copper bismuth sulphide (CuBiS2) films have changed with deposition temperature.

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Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

Nanoscale Reports ◽

10.26524/nr1815 ◽

2018 ◽

Vol 1 (1) ◽

pp. 26-31 ◽

Cited By ~ 1

Author(s):

B Babu ◽

K Mohanraj ◽

S Chandrasekar ◽

N Senthil Kumar ◽

B Mohanbabu

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Electrical Properties ◽

Gamma Radiation ◽

Glass Substrate ◽

Gamma Ray ◽

Optical And Electrical Properties ◽

Deposition Technique ◽

Polycrystalline Structure ◽

Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

10.36293/sfj.2019.0002 ◽

2019 ◽

Keyword(s):

Thin Films ◽

Solar Cells ◽

Electrical Properties ◽

Tin Oxide ◽

Transparent Conducting Oxide ◽

Optical And Electrical Properties ◽

Fluorine Doping ◽

X Ray Diffraction ◽

X Ray ◽

Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

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Structural, Optical, and Electrical Properties of ZnO/Nb/ZnO Multilayer Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.975.238 ◽

2014 ◽

Vol 975 ◽

pp. 238-242 ◽

Cited By ~ 3

Author(s):

Adolfo Henrique Nunes Melo ◽

Petrucio Barrozo Silva ◽

Marcelo Andrade Macedo

Keyword(s):

Thin Films ◽

Peak Position ◽

Multilayer Thin Films ◽

Optical And Electrical Properties ◽

Zno Thin Film ◽

Energy Band Gap ◽

X Ray ◽

Unit Cell Size ◽

Vis Spectroscopy ◽

Sputtering System

ZnO multilayers and pure ZnO thin films were deposited onto glass using a sputtering system, and were subsequently characterized by X-ray diffractometry and UV-Vis spectroscopy. The resistivity of the samples was measured by the four-probe method. All films exhibited preferential orientation along the c-axis and the peak position (002) shifted to a lower position, indicating a reduction in the unit cell size. The pure ZnO thin film exhibited a maximum transmittance of approximately 98%, which decreased as the Nb layer increased, thus increasing the absorbance of the multilayer thin films. The energy band gap decreased as the thickness of the metal increased which higher value was 3.18 eV. The resistivity had a minimum of 0.1 × 10-4 Ω m.

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