LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory
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2014 ◽
Vol 13
(2)
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pp. 432-438
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2018 ◽
Vol 65
(9)
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pp. 3775-3779
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2018 ◽
Vol 51
(22)
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pp. 225102
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