Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

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Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits

10.1117/12.18242 ◽

1990 ◽

Cited By ~ 1

Author(s):

Shogo Takahashi ◽

Katsuhiko Goto ◽

H. Uesugi ◽

Harumi Nishiguchi ◽

Etsuji Omura ◽

...

Keyword(s):

Integrated Circuits ◽

Laser Diode ◽

Threshold Current ◽

Injection Laser ◽

Optoelectronic Integrated Circuits ◽

Vertical Injection ◽

Low Threshold

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Low threshold current and high output power operation for 1.5 µm GRINSCH strained MQW laser diode

Electronics Letters ◽

10.1049/el:19950174 ◽

1995 ◽

Vol 31 (4) ◽

pp. 282-284 ◽

Cited By ~ 1

Author(s):

T. Kunii ◽

Y. Katoh ◽

T. Kamijoh ◽

Y. Matsui

Keyword(s):

Output Power ◽

Laser Diode ◽

Threshold Current ◽

High Output Power ◽

Low Threshold ◽

Power Operation ◽

High Output

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Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode

Electronics Letters ◽

10.1049/el:19900884 ◽

1990 ◽

Vol 26 (17) ◽

pp. 1375 ◽

Cited By ~ 32

Author(s):

T. Katsuyama ◽

I. Yoshida ◽

J. Shinkai ◽

J. Hashimoto ◽

H. Hayashi

Keyword(s):

Quantum Well ◽

Laser Diode ◽

Threshold Current ◽

Single Quantum ◽

Single Quantum Well ◽

Visible Laser ◽

Low Threshold

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Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

Applied Sciences ◽

10.3390/app9010162 ◽

2019 ◽

Vol 9 (1) ◽

pp. 162

Author(s):

Ning An ◽

Lei Ma ◽

Guanyu Wen ◽

Zhipeng Liang ◽

Haitao Zhang ◽

...

Keyword(s):

Quantum Well ◽

Laser Diode ◽

Threshold Current ◽

Threshold Current Density ◽

Structure Design ◽

Blocking Layer ◽

Quantum Well Laser ◽

Low Threshold ◽

Current Densities ◽

Better Than

A low threshold current density of 2 μm InGaAsSb/AlGaAsSb muti-quantum well (MQW) laser diode with carrier blocking layer (CBL) is demonstrated by simulation and fabrication. The carrier leakage is found to be theoretically suppressed for the devices with CBL. All the laser wafers are grown with a solid source Molecular Beam Epitaxy(MBE) System. Experimental results reveal the samples with CBL exhibits ultra-low threshold current densities of 142 A/cm2 and high slope efficiency of 0.158 W/A, which is better than 215 A/cm2 and 0.122 W/A achieved in the conventional InGaAsSb/AlGaAsSb LDs at room temperature. This improvement in device performance comes from meticulously designing the carrier blocking layers to increase carrier confinement and injection efficiency.

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Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Micromachines ◽

10.3390/mi10120875 ◽

2019 ◽

Vol 10 (12) ◽

pp. 875

Author(s):

Wenjie Wang ◽

Wuze Xie ◽

Zejia Deng ◽

Mingle Liao

Keyword(s):

Quantum Wells ◽

Output Power ◽

Laser Diode ◽

Barrier Layer ◽

Threshold Current ◽

Reference Structure ◽

Multiple Quantum ◽

Symmetric Quantum ◽

Low Threshold ◽

P Type

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.

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