scholarly journals Synthesis and Effect of TIO2 on Electrical Conductivity of Poly (2, 5-Dimethoxyaniline)/ TIO2 Thin Film

2019 ◽  
Vol 8 (4) ◽  
pp. 71-73
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Sulfonic Acid ◽  
Precursor Solution ◽  
Titanium Isopropoxide ◽  
Dip Coating ◽  
Tio2 Thin Films ◽  
Camphor Sulfonic Acid ◽  
Dc Electrical Conductivity

TiO2 has been synthesized using Titanium isopropoxide as precursor solution. Different amount of Titanium isopropoxide of 0.2, 0.4, 0.6, 0.8 and 1 mol concentration used to synthesis TiO2 . Different mol concentration solution has been blend with Camphor sulfonic acid protonated Poly (2, 5-dimethoxyaniline) and cast as thin film by dip coating. The optical and XRD analyses were carried out for the dip coated TiO2 thin films. The DC electrical conductivity was measured for the dip coated Camphor sulfonic acid protonated Poly (2, 5-dimethoxyaniline) /TiO2 blend thin films. The Titanium isopropoxide of 0.6 mol concentration shows better UV-Vis absorption and crystalline nature. Camphor sulfonic acid protonated Poly (2, 5-dimethoxyaniline) /TiO2 blend thin film of 0.6 mol concentration shows higher DC electrical conductivity when compared to other mol concentration.

scholarly journals The Role of Concentration Ratio of TTiP:AcAc on the Photocatalytic Activity of TiO2 Thin Film in Reducing Degradation Products of Used Frying Oil

2017 ◽  
Vol 12 (3) ◽  
pp. 430 ◽  
Author(s):  
Ummi Kaltsum ◽  
Affandi Faisal Kurniawan ◽  
Iis Nurhasanah ◽  
Priyono Priyono
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Activity ◽  
Concentration Ratio ◽  
Tio2 Thin Film ◽  
Degradation Products ◽  
Precursor Solution ◽  
Frying Oil ◽  
Tio2 Thin Films ◽  
Used Frying Oil

The TiO2 thin film has been applied to reduce degradation products (free fatty acid/FFA and peroxide value/PV) in used frying oil under ultraviolet (UV) light irradiation. FFA and PV are degradation products in used frying oil that can cause various diseases in human. In this study, the TiO2 thin films were made from precursor solution with concentration ratio of titanium tetraisopropoxide (TTiP) and acetylacetone (AcAc) of 1:1, 1:2, 2:1, 2:3, and 3:2. The aim of this study is to investigate the effect of concentration ratio of TTiP and AcAc on the photocatalytic activity of TiO2 thin film in reducing FFA and PV of used frying oil. The spray coating method was used to deposit precursor solution of TiO2 onto glass substrate at 450 oC. All TiO2 thin films consist of spherical-like grain with dominant structure of TiO2 rutile. The band gap energy of TiO2 thin films was in the range 3.11-3.16 eV. Concentration ratio of TTiP and AcAc of 2:3 results in TiO2 thin film with highest photocatalytic activity in reducing FFA and PV of used frying oil. Copyright © 2017 BCREC Group. All rights reservedReceived: 20th February 2017; Revised: 27th May 2017; Accepted: 30st May 2017; Available online: 27th October 2017; Published regularly: December 2017How to Cite: Kaltsum, U., Kurniawan, A.F., Nurhasanah, I., Priyono, P. (2017). The Role of Concentration Ratio of TTiP:AcAc on the Photocatalytic Activity of TiO2 Thin Film in Reducing Degradation Products of Used Frying Oil. Bulletin of Chemical Reaction Engineering & Catalysis, 12 (3): 430-436 (doi:10.9767/bcrec.12.3.951.430-436) 

Preparation and Characterization of TiO2 Photocatalytic Thin Film Prepared by Sol-Gel Dip Coating

2012 ◽  
Vol 476-478 ◽  
pp. 2398-2402
Author(s):  
Jiao Jiao Wang ◽  
Kai Zheng ◽  
Christian Rüssel ◽  
Wen Liang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rhodamine B ◽  
Uv Light ◽  
Anatase Phase ◽  
Sol Gel ◽  
Rutile Phase ◽  
Dip Coating ◽  
High Photocatalytic Activity ◽  
Tio2 Thin Films

Titanium dioxide thin films have been prepared from tetrabutyl-orthotitanate solution and methanol as a solvent by sol-gel dip coating technique. The thermal properties of TiO2 gel were analyzed by thermogravimetry and differential thermal analysis (TG-DTA). Structural properties of TiO2 thin films at different heat treatment temperatures were analyzed by X-ray diffraction (XRD), Infrared Raman spectroscopy and scanning electron microscopy (SEM). The results show that the TiO2 thin films crystallize in anatase phase at 400 °C and the crystallinity of anatase phase was improved with increasing temperature. The TiO2 thin films crystallize into the anatase-rutile phase at 600 °C and further into the rutile phase at 800 °C. The photocatalytic performance of TiO2 film was tested for the degradation of 2×10-5 mol/L Rhodamine B. The degradation of Rhodamine B solutions reached 0.9×10-5 mol/L after irradiated for 8 h under UV light. The TiO2 thin film exhibited relatively high photocatalytic activity towards degrading Rhodamine B.

scholarly journals Camphor Sulfonic acid Protonated Poly (2, 5-dimethoxyaniline) - Cadmium sulfide blend thin film for Ammonia gas Sensing Application

2019 ◽  
Vol 8 (10) ◽  
pp. 3237-3242
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Sulfonic Acid ◽  
Oxidative Polymerization ◽  
Dip Coating ◽  
Ammonia Gas ◽  
Spectra Analysis ◽  
Camphor Sulfonic Acid ◽  
Blend Film ◽  
Weight Percentage

Poly (2, 5-dimethoxyaniline) and Cadmium sulfide nanocomposite blend have been prepared by low cost, feasible oxidative polymerization method. Poly (2, 5-dimethoxyaniline) has been protonated with Camphor sulfonic acid. nanocomposite blend thin films were obtained by blending with CdS into Poly (2, 5-dimethoxyaniline) for different weight percentage by dip coating. The structural, morphological, optical characterizations of pristine Poly (2, 5-dimethoxyaniline) and nanocomposite blend thin films were analyzed. The XRD pattern shows that the crystallinity of the blend film increases with increasing CdS concentration. FESEM images shows porous blend film. The UV-Vis and Photoluminence spectra analysis shows the extension of conjugation length with decreasing band gap with increasing CdS concentration. The presence of functional groups were studied from FTIR spectra. The CSA protonated Poly (2, 5-dimethoxyaniline) – Cadmium sulfide blend films have been investigated as ammonia gas.

Fabrication of a Strontium-Doped Lanthanum Chromite (LSC) Thin Film on SUS430 Substrate

2006 ◽  
Vol 317-318 ◽  
pp. 173-176 ◽  
Author(s):  
Hae Jin Hwang ◽  
Ji Woong Moon ◽  
Yong Ho Lim ◽  
Seung Hun Lee ◽  
Eun A Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Deposition ◽  
Precursor Solution ◽  
Heat Treating ◽  
Dip Coating ◽  
Lanthanum Chromite ◽  
Lanthanum Strontium ◽  
Insulating Phase ◽  
Dip Coating Technique

Lanthanum strontium chromite (LSC) thin films were prepared from the solution of La, Sr, Cr nitrates, acetylacetone and 2-methoxyethanol. Dip-coating technique was used to decompose La0.8Sr0.2CrO3, LSC thin films. The obtained precursor solution was sufficiently spinable and dried gel films were crystallized after heat-treating above 500°C for 2 h. The oxidation at 800°C for 40 hr resulted in no Fe3O4 surface-insulating phase, which means that the LSC thin film would be an effective oxidation-protecting layer of SUS430 substrate. The carbon deposited on an uncoated SUS430 substrate was amorphous with spherical morphology. The obtained LSC thin film was found to be very effective on preventing carbon deposition under dry hydrocarbon atmosphere.

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

scholarly journals Microstructure Evolution of Ag/TiO2 Thin Film

2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Growth Rate ◽  
Synchrotron Radiation ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Contact Mode ◽  
X Ray ◽  
Radiation Imaging

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

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