Gallium arsenide buffer amplifier
Keyword(s):
The circuitry of a buffer amplifier (BA) implemented on gallium arsenide n-channel field-effect transistors with a control p-n junction and gallium arsenide bipolar p-n-p transistors is considered. The results of computer simulation of the amplitude characteristics of the BA in the LTspice environment are presented. The proposed circuit solutions are recommended for use in RC filters of the Sallen Key family
1977 ◽
Vol 1
(4)
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pp. 105
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Keyword(s):
1985 ◽
Vol 32
(1)
◽
pp. 61-66
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Keyword(s):
1969 ◽
Vol 12
(2)
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pp. 111-116
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1980 ◽
Vol 23
(2)
◽
pp. 157-172
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1996 ◽
Vol 35
(Part 1, No. 5A)
◽
pp. 2578-2582
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Keyword(s):
Evaluation of Effective Gate Length of Gallium Arsenide Metal-Semiconductor Field Effect Transistors
1997 ◽
Vol 36
(Part 1, No. 9A)
◽
pp. 5464-5467