Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

2019 ◽  
pp. 472
Author(s):  
Isao Suzumura ◽  
Toshihide Jinnai ◽  
Hajime Watakabe ◽  
Akihiro Hanada ◽  
Ryo Onodera ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Tfts ◽  
Ion Implanted

Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology

2019 ◽  
pp. 472
Author(s):  
Isao Suzumura ◽  
Toshihide Jinnai ◽  
Hajime Watakabe ◽  
Akihiro Hanada ◽  
Ryo Onodera ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Tfts ◽  
Ion Implanted

Real-Time External Compensation of Threshold Voltage Shift Using Double-Gate Oxide TFTs in a Gate Driving System

2016 ◽  
Vol 12 (9) ◽  
pp. 892-897 ◽  
Author(s):  
Bong-Hyun You ◽  
Soo-Yeon Lee ◽  
Seok-Ha Hong ◽  
Jae-Hoon Lee ◽  
Hyun-Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Driving System ◽  
Oxide Tfts ◽  
Gate Driving

12-2: Development of Top-Gate Oxide TFTs for Plastic-Film LCDs

2018 ◽  
Vol 49 (1) ◽  
pp. 121-124 ◽  
Author(s):  
Yohei Yamaguchi ◽  
Kazufumi Watabe ◽  
Hiroshi Kawanago ◽  
Isao Suzumura
Keyword(s):  
Gate Oxide ◽  
Plastic Film ◽  
Oxide Tfts

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

2005 ◽  
pp. 833-836
Author(s):  
G. Gudjónsson ◽  
H.Ö. Ólafsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
Einar O. Sveinbjörnsson ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Oxide ◽  
Field Effect Mobility ◽  
Aluminium Ion ◽  
Ion Implanted

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

2005 ◽  
Vol 26 (2) ◽  
pp. 96-98 ◽  
Author(s):  
G. Gudjonsson ◽  
H.O. Olafsson ◽  
F. Allerstam ◽  
P.-A. Nilsson ◽  
E.O. Sveinbjornsson ◽  
...  
Keyword(s):  
Field Effect ◽  
High Field ◽  
Gate Oxide ◽  
Field Effect Mobility ◽  
Aluminum Ion ◽  
Ion Implanted

P-34: Influences of Channel Deposition Conditions on Characteristics of Bottom-Gate Oxide TFTs Adopting In-Free Zinc-Tin Oxides

2010 ◽  
Vol 41 (1) ◽  
pp. 1347
Author(s):  
Cheng-Han Wu ◽  
Chih-Wei Chien ◽  
Shiuan-Iou Lin ◽  
Chia-Hsin Liao ◽  
Yen-Cheng Kung ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Tin Oxides ◽  
Free Zinc ◽  
Bottom Gate ◽  
Deposition Conditions ◽  
Oxide Tfts

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

2005 ◽  
Vol 483-485 ◽  
pp. 833-836 ◽  
Author(s):  
G. Gudjónsson ◽  
H.Ö. Ólafsson ◽  
Fredrik Allerstam ◽  
Per Åke Nilsson ◽  
Einar Ö. Sveinbjörnsson ◽  
...  
Keyword(s):  
Field Effect ◽  
Functional Relationship ◽  
Gate Oxide ◽  
Aluminum Concentration ◽  
Field Effect Mobility ◽  
P Type ◽  
Channel Region ◽  
Mobility Reduction ◽  
Peak Field ◽  
Ion Implanted

We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility reduction with increasing acceptor density follows the same functional relationship as in n-channel Si MOSFETs.

Expedient floating process for ultra-thin InGaZnO thin-film-transistors and their high bending performance

RSC Advances ◽  
2016 ◽  
Vol 6 (68) ◽  
pp. 63418-63424 ◽  
Author(s):  
Won Jun Kang ◽  
Cheol Hyoun Ahn ◽  
Myeong Gu Yun ◽  
Sung Woon Cho ◽  
Ye Kyun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Weight ◽  
Surface Morphology ◽  
Polyvinyl Alcohol ◽  
Thin Film Transistors ◽  
Gate Oxide ◽  
Low Molecular Weight ◽  
Bending Performance ◽  
Good Surface ◽  
Oxide Tfts

Polyvinyl alcohol with low molecular weight exhibited good surface morphology and quick floating time for the fabrication of the top-gate oxide TFTs.

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