Changes of SDS-PAGE Pattern of Pork Myofibrillar Proteins Induced by Electron Beam Irradiation

2005 ◽  
Vol 10 (4) ◽  
pp. 378-381 ◽  
Author(s):  
Key Whang ◽  
Dong-Kwan Jeong ◽  
Hyuk-Il Kim
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Myofibrillar Proteins ◽  
Beam Irradiation ◽  
Sds Page

scholarly journals Effects of Electron Beam Irradiation on Acaricide-Resistant and Susceptible Strains of Tetranychus urticae (Acari: Tetranychidae)

2021 ◽  
Vol 11 (17) ◽  
pp. 8116
Author(s):  
Hyun-Na Koo ◽  
Jin-Hyun Oh ◽  
Jong-Chan Jeon ◽  
Won-Jin Kang ◽  
Sun-Ran Cho ◽  
...  
Keyword(s):  
Electron Beam ◽  
Tetranychus Urticae ◽  
Electron Beam Irradiation ◽  
Normal Development ◽  
Polyacrylamide Gel Electrophoresis ◽  
Sodium Dodecyl ◽  
Hatching Rate ◽  
Beam Irradiation ◽  
Sds Page ◽  
Resistant Strains

The objective of our study was to compare the effects of electron beam irradiation on the development and reproduction of Tetranychus urticae strains that were susceptible or resistant to acequinocyl, bifenazate, and etoxazole. Electron beam irradiation (50–400 Gy) was applied to T. urticae eggs, nymphs, and adults, after which the hatching rate, the emergence rate, longevity, and fecundity were analyzed. Eggs of all the T. urticae strains were irradiated with 150 Gy, and none of them hatched. When protonymphs were irradiated with 300 Gy, oviposition and thus F1 hatchability in newly emerged adults were completely suppressed. The F1 hatching rate of irradiated adults began to markedly decrease with a dose of 200 Gy, and all strains experienced 100% inhibition at a dose of 400 Gy. Sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE) showed substantial reductions in the levels of a 50 kDa protein in the susceptible and three resistant strains of T. urticae after irradiation with 400 Gy. These results indicate that a dose of 400 Gy was required to inhibit the normal development and reproduction of T. urticae, and susceptible and acaricide-resistant strains of T. urticae had identical radiosensitivities.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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