scholarly journals Crystal design using multipolar electrostatic interactions: A concept study for organic electronics

2013 ◽  
Vol 9 ◽  
pp. 2367-2373 ◽  
Author(s):  
Peer Kirsch ◽  
Qiong Tong ◽  
Harald Untenecker
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Electronics ◽  
Electrostatic Interactions ◽  
Concept Study ◽  
Partial Charges ◽  
Crystal Design

Using a simple synthetic protocol, heterohexacene analogues with a quadrupolar distribution of partial charges are readily available. In contrast to most other acenes, these compounds crystallize with a slipped-stack, brickwork-like packing which is mainly controlled by electrostatic interactions. This type of packing offers an advantage for organic semiconductors, because it allows more isotropic charge transport compared to the “herring bone” stacking observed for other acenes.

scholarly journals Origin of the p-type characteristics of organic semiconductors

2021 ◽  
Author(s):  
Wenping Hu ◽  
Liqiang Li ◽  
Yinan Huang ◽  
Xiaosong Chen ◽  
Kunjie Wu ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Electronics ◽  
Room Temperature ◽  
Radical Cations ◽  
Organic Radical ◽  
Complete Disappearance ◽  
Core Technology ◽  
Property Space ◽  
P Type

Abstract Organic semiconductors (OSC) are generally considered intrinsic (undoped), an assumption which underpins our understanding of the charge transport in this promising class of materials. However, this premise conflicts with a variety of experimental observations, that suggest the presence of excess holes carriers in OSCs at room temperature. Here, using a low-power plasma de-doping method, we report that trace amounts (~1015 cm-3) of oxygen-induced organic radical cations (OIORCs) are inherent in the lattice of OSCs as innate hole carriers, and that this is the origin of the p-type characteristics exhibited by the majority of these materials. This finding clarifies previously unexplained organic electronics phenomena and provides a foundation upon which to re-understand charge transport in OSCs. Furthermore, the de-doping method can eliminate the trace OIORCs, resulting in the complete disappearance of p-type behavior, while re-doping (under light irradiation in O2), reverses the process. These methods can precisely modulate key electronic characteristics (e.g., conductivity, polarity, and threshold voltage) in a nondestructive way, expanding the explorable charge transport property space for all known OSC materials. Accordingly, we conclude that our tailorable OIORC doping strategy, requiring only off-the-shelf equipment and a glovebox, will become a core technology in the burgeoning organic electronics industry.

Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors

2021 ◽  
Author(s):  
Andrey Yurievich Sosorev ◽  
Olga Parashchuk ◽  
Nikita Tukachev ◽  
Dmitry Maslennikov ◽  
Dmitry Dominsky ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Electrostatic Interactions ◽  
High Mobility ◽  
Dynamic Disorder ◽  
Transfer Integrals

Dynamic disorder manifested in fluctuations of charge transfer integrals considerably hinders charge transport in high-mobility organic semiconductors. Accordingly, strategies for suppression of the dynamic disorder are highly desirable. In this...

Design and Synthesis of Two-Dimensional Covalent Organic Frameworks with Four-Arm Cores: Prediction of Remarkable Ambipolar Charge-Transport Properties

2019 ◽  
Author(s):  
Simil Thomas ◽  
Hong Li ◽  
Raghunath R. Dasari ◽  
Austin Evans ◽  
William Dichtel ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Density Functional ◽  
Polymer Networks ◽  
Two Dimensional ◽  
Covalent Organic Frameworks ◽  
X Ray Diffraction ◽  
Zinc Porphyrin ◽  
Design And Synthesis ◽  
Predicted Values

<p>We have considered three two-dimensional (2D) π-conjugated polymer networks (i.e., covalent organic frameworks, COFs) materials based on pyrene, porphyrin, and zinc-porphyrin cores connected <i>via</i> diacetylenic linkers. Their electronic structures, investigated at the density functional theory global-hybrid level, are indicative of valence and conduction bands that have large widths, ranging between 1 and 2 eV. Using a molecular approach to derive the electronic couplings between adjacent core units and the electron-vibration couplings, the three π-conjugated 2D COFs are predicted to have ambipolar charge-transport characteristics with electron and hole mobilities in the range of 65-95 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. Such predicted values rank these 2D COFs among the highest-mobility organic semiconductors. In addition, we have synthesized the zinc-porphyrin based 2D COF and carried out structural characterization via powder X-ray diffraction and surface area analysis, which demonstrates the feasability of these electroactive networks.</p>

Rational design and crystal structure prediction of ring-fused double-PDI compounds as n-channel organic semiconductors: a DFT study

2021 ◽  
Author(s):  
Suryakanti Debata ◽  
Smruti R. Sahoo ◽  
Rudranarayan Khatua ◽  
Sridhar Sahu
Keyword(s):  
Crystal Structure ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Structure Prediction ◽  
Rational Design ◽  
Molecular Design ◽  
Design Strategy ◽  
Dft Study ◽  
Crystal Structure Prediction ◽  
Model Compounds

In this study, we present an effective molecular design strategy to develop the n-type charge transport characteristics in organic semiconductors, using ring-fused double perylene diimides (DPDIs) as the model compounds.

Charge transport in doped organic semiconductors

2003 ◽  
Vol 68 (8) ◽  
Author(s):  
Yulong Shen ◽  
Kenneth Diest ◽  
Man Hoi Wong ◽  
Bing R. Hsieh ◽  
David H. Dunlap ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors

Charge-Transport in Crystalline Organic Semiconductors with Liquid Crystalline Order.

ChemInform ◽  
2005 ◽  
Vol 36 (44) ◽  
Author(s):  
Panos Vlachos ◽  
Bassam Mansoor ◽  
Matthew P. Aldred ◽  
Mary O'Neill ◽  
Stephen M. Kelly
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Liquid Crystalline ◽  
Crystalline Order

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

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