scholarly journals Origin of the p-type characteristics of organic semiconductors

2021 ◽  
Author(s):  
Wenping Hu ◽  
Liqiang Li ◽  
Yinan Huang ◽  
Xiaosong Chen ◽  
Kunjie Wu ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Electronics ◽  
Room Temperature ◽  
Radical Cations ◽  
Organic Radical ◽  
Complete Disappearance ◽  
Core Technology ◽  
Property Space ◽  
P Type

Abstract Organic semiconductors (OSC) are generally considered intrinsic (undoped), an assumption which underpins our understanding of the charge transport in this promising class of materials. However, this premise conflicts with a variety of experimental observations, that suggest the presence of excess holes carriers in OSCs at room temperature. Here, using a low-power plasma de-doping method, we report that trace amounts (~1015 cm-3) of oxygen-induced organic radical cations (OIORCs) are inherent in the lattice of OSCs as innate hole carriers, and that this is the origin of the p-type characteristics exhibited by the majority of these materials. This finding clarifies previously unexplained organic electronics phenomena and provides a foundation upon which to re-understand charge transport in OSCs. Furthermore, the de-doping method can eliminate the trace OIORCs, resulting in the complete disappearance of p-type behavior, while re-doping (under light irradiation in O2), reverses the process. These methods can precisely modulate key electronic characteristics (e.g., conductivity, polarity, and threshold voltage) in a nondestructive way, expanding the explorable charge transport property space for all known OSC materials. Accordingly, we conclude that our tailorable OIORC doping strategy, requiring only off-the-shelf equipment and a glovebox, will become a core technology in the burgeoning organic electronics industry.

scholarly journals Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Science ◽  
2018 ◽  
Vol 362 (6419) ◽  
pp. 1131-1134 ◽  
Author(s):  
Aristide Gumyusenge ◽  
Dung T. Tran ◽  
Xuyi Luo ◽  
Gregory M. Pitch ◽  
Yan Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Polymer Blends ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Hole Mobility ◽  
General Strategy ◽  
Semiconducting Polymer ◽  
High Temperature Operation

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

N- and P-Type Building Blocks for Organic Electronics Based on Oligothiophene Cores

2003 ◽  
Vol 769 ◽  
Author(s):  
Antonio Facchetti ◽  
Myung-Han Yoon ◽  
Howard E. Katz ◽  
Melissa Mushrush ◽  
Tobin J. Marks
Keyword(s):  
Organic Semiconductors ◽  
Organic Electronics ◽  
Carrier Mobility ◽  
Building Blocks ◽  
Conjugation Length ◽  
Π Interactions ◽  
Plastic Electronics ◽  
P Type ◽  
The Impact ◽  
Homo Lumo

AbstractOrganic semiconductors exhibiting complementary-type carrier mobility are the key components for the development of the field of “plastic electronics”. We present here a novel series of αω- and isomerically pure β,β'-diperfluorohexyl-substituted thiophene and study the impact of fluoroalkyl substitution and conjugation length vìs-à-vìs the corresponding fluorinefree analogues. Trends between the fluorinated and fluorine-free families in molecular packing, HOMO-LUMO gap, and π-π interactions are found to be strikingly similar. TFT measurements indicate that all members of the fluorinated series are n-type semiconductors

N- and P-Type Building Blocks for Organic Electronics Based on Oligothiophene Cores

2003 ◽  
Vol 771 ◽  
Author(s):  
Antonio Facchetti ◽  
Myung-Han Yoon ◽  
Howard E. Katz ◽  
Melissa Mushrush ◽  
Tobin J. Marks
Keyword(s):  
Organic Semiconductors ◽  
Organic Electronics ◽  
Carrier Mobility ◽  
Building Blocks ◽  
Molecular Packing ◽  
Conjugation Length ◽  
Π Interactions ◽  
P Type ◽  
The Impact ◽  
Homo Lumo

AbstractOrganic semiconductors exhibiting complementary-type carrier mobility are the key components for the development of the field of “gplastic electronics” We present here a novel series of α,ω- and isomerically pure ββ'-diperfluorohexyl-substituted thiophene and study the impact of fluoroalkyl substitution and conjugation length vis-a-vis the corresponding fluorinefree analogues. Trends between the fluorinated and fluorine-free families in molecular packing, HOMO-LUMO gap, and π-π interactions are found to be strikingly similar. TFT measurements indicate that all members of the fluorinated series are n-type semiconductors

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

2008 ◽  
Vol 104 (11) ◽  
pp. 113723 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Ikue Koizumi ◽  
Ki-Beom Kim ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Copper Selenide ◽  
Hole Injection ◽  
P Type ◽  
Selenide Thin Film

Tuning the π–π overlap and charge transport in single crystals of an organic semiconductor via solvation and polymorphism

2020 ◽  
Vol 22 (35) ◽  
pp. 19855-19863
Author(s):  
Marc Courté ◽  
Jun Ye ◽  
Hui Jiang ◽  
Rakesh Ganguly ◽  
Shasha Tang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Crystalline Form ◽  
Organic P ◽  
Single Crystalline ◽  
Type Semiconductor ◽  
P Type

We report here on the occurrence of two solvates and three polymorphs in single crystalline form of an organic p-type semiconductor and demonstrate here that solvation allows to tune the π–π overlap and transport properties of organic semiconductors.

scholarly journals Crystal design using multipolar electrostatic interactions: A concept study for organic electronics

2013 ◽  
Vol 9 ◽  
pp. 2367-2373 ◽  
Author(s):  
Peer Kirsch ◽  
Qiong Tong ◽  
Harald Untenecker
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Electronics ◽  
Electrostatic Interactions ◽  
Concept Study ◽  
Partial Charges ◽  
Crystal Design

Using a simple synthetic protocol, heterohexacene analogues with a quadrupolar distribution of partial charges are readily available. In contrast to most other acenes, these compounds crystallize with a slipped-stack, brickwork-like packing which is mainly controlled by electrostatic interactions. This type of packing offers an advantage for organic semiconductors, because it allows more isotropic charge transport compared to the “herring bone” stacking observed for other acenes.

Interfacial Phenomena Affecting Charge Transport In Small Molecule Organic Thin-Film Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Antonio Facchetti ◽  
Choongik Kim ◽  
Myung-han Yoon ◽  
Tobin J Marks
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Surface Modifications ◽  
Dielectric Surface ◽  
Organic Thin Film ◽  
Electrical Measurements ◽  
Semiconductor Interface ◽  
P Type

ABSTRACTOrganic semiconductors exhibiting p-, n-type, or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers / HMDS on 300 nm SiO2/p+-Si, and are characterized by AFM, SEM, and WAXRD, followed by field-effect transistor (FET) electrical characterization. It is observed that in case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. This study provides key information on the chemical origin of the charge trapping sites at the FET dielectric-semiconductor interface. In parallel, bottom-contact FETs of n-type oligothiophenes were investigated by a combination of microscopy/electrical measurements and new insights for the poor electron injection efficiency from the Au contacts are presented

Design and Synthesis of Two-Dimensional Covalent Organic Frameworks with Four-Arm Cores: Prediction of Remarkable Ambipolar Charge-Transport Properties

2019 ◽  
Author(s):  
Simil Thomas ◽  
Hong Li ◽  
Raghunath R. Dasari ◽  
Austin Evans ◽  
William Dichtel ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Density Functional ◽  
Polymer Networks ◽  
Two Dimensional ◽  
Covalent Organic Frameworks ◽  
X Ray Diffraction ◽  
Zinc Porphyrin ◽  
Design And Synthesis ◽  
Predicted Values

<p>We have considered three two-dimensional (2D) π-conjugated polymer networks (i.e., covalent organic frameworks, COFs) materials based on pyrene, porphyrin, and zinc-porphyrin cores connected <i>via</i> diacetylenic linkers. Their electronic structures, investigated at the density functional theory global-hybrid level, are indicative of valence and conduction bands that have large widths, ranging between 1 and 2 eV. Using a molecular approach to derive the electronic couplings between adjacent core units and the electron-vibration couplings, the three π-conjugated 2D COFs are predicted to have ambipolar charge-transport characteristics with electron and hole mobilities in the range of 65-95 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. Such predicted values rank these 2D COFs among the highest-mobility organic semiconductors. In addition, we have synthesized the zinc-porphyrin based 2D COF and carried out structural characterization via powder X-ray diffraction and surface area analysis, which demonstrates the feasability of these electroactive networks.</p>

Rational design and crystal structure prediction of ring-fused double-PDI compounds as n-channel organic semiconductors: a DFT study

2021 ◽  
Author(s):  
Suryakanti Debata ◽  
Smruti R. Sahoo ◽  
Rudranarayan Khatua ◽  
Sridhar Sahu
Keyword(s):  
Crystal Structure ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Structure Prediction ◽  
Rational Design ◽  
Molecular Design ◽  
Design Strategy ◽  
Dft Study ◽  
Crystal Structure Prediction ◽  
Model Compounds

In this study, we present an effective molecular design strategy to develop the n-type charge transport characteristics in organic semiconductors, using ring-fused double perylene diimides (DPDIs) as the model compounds.

Sign in / Sign up

Export Citation Format

Share Document