scholarly journals Electronic transport through renormalized DNA chains

2019 ◽  
Vol 2 (3) ◽  
pp. 118-123
Author(s):  
Daniel García Flores ◽  
Priscilla Elizabeth Iglesias Vázquez ◽  
Rubén César Villarreal Sánchez
Keyword(s):  
Electronic Transport ◽  
Electronic Devices ◽  
Tight Binding ◽  
Tight Binding Approximation ◽  
Quantum Transmission ◽  
Energy Profiles ◽  
Current Voltage ◽  
Current Voltage Relation ◽  
Transmission Energy

DNA have presented through experiments great variability in terms of its electronic characteristics. They have shown that it can acquire the behavior of a conductor, semiconductor or insulator, making it a good candidate for replicating at the mesoscopic scale electronic devices. In the present work, the quantum transmission coefficient is calculated for DNA chains of various lengths with the use of the decimation and renormalization procedure, within the tight binding approximation and the Lippmann-Schwinger scattering theory. Transmission-Energy profiles were obtained, which helped to infer electronic transport properties of the system, Additionally, the current-voltage relation for a 30-pairs chain was calculated as well, and compared with the experimental results of Porath et al. Results show the semiconductor characteristics of the molecule, and a resemblance with the work of Porath, showing the quality of the procedure and the model utilized.

Electrical Transport Properties of Carbon Nanotube Metal-Semiconductor Heterojunction

2016 ◽  
Vol 15 (05n06) ◽  
pp. 1660009 ◽  
Author(s):  
Keka Talukdar ◽  
Anil Shantappa
Keyword(s):  
Electrical Transport ◽  
Nearest Neighbor ◽  
Electronic Devices ◽  
Tight Binding ◽  
Transmission Function ◽  
Topological Defects ◽  
Dynamics Simulation ◽  
Internal Stresses ◽  
Electrical Transport Properties ◽  
Tight Binding Approximation

Carbon nanotubes (CNTs) have been proved to have promising applicability in various fields of science and technology. Their fascinating mechanical, electrical, thermal, optical properties have caught the attention of today’s world. We have discussed here the great possibility of using CNTs in electronic devices. CNTs can be both metallic and semiconducting depending on their chirality. When two CNTs of different chirality are joined together via topological defects, they may acquire rectifying diode property. We have joined two tubes of different chiralities through circumferential Stone–Wales defects and calculated their density of states by nearest neighbor tight binding approximation. Transmission function is also calculated to analyze whether the junctions can be used as electronic devices. Different heterojunctions are modeled and analyzed in this study. Internal stresses in the heterojunctions are also calculated by molecular dynamics simulation.

NANOSWITCH BASED ON NANOTUBES: BENT-NANOTUBES TRANSPORT

2004 ◽  
Vol 03 (01n02) ◽  
pp. 131-136 ◽  
Author(s):  
A. A. FARAJIAN ◽  
B. I. YAKOBSON ◽  
H. MIZUSEKI ◽  
Y. KAWAZOE
Keyword(s):  
Electronic Transport ◽  
Tight Binding ◽  
Mechanical Deformation ◽  
Localized States ◽  
Switching Behavior ◽  
Single Wall Carbon Nanotubes ◽  
Binding Model ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics

The electronic transport through bent single-wall carbon nanotubes is studied. Using a four-orbital per atom tight-binding model, the relaxed configurations of a (10, 0) semiconducting nanotube at different bending angles are first obtained. The optimized structures are then used in calculating conductance and current–voltage characteristics of the systems. These results are used to establish a correspondence between the mechanical deformation and transport properties, with potential applications in, e.g., nanoswitches. The source of the switching behavior is explained in terms of the localized states within the bent region.

Conductivity of impurity graphene nanoribbons and gate electric field

2017 ◽  
Vol 31 (36) ◽  
pp. 1750340
Author(s):  
Natalia Konobeeva ◽  
Mikhail Belonenko
Keyword(s):  
Electric Field ◽  
Graphene Nanoribbons ◽  
Constant Electric Field ◽  
Tight Binding ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Tight Binding Approximation ◽  
Current Voltage

In this paper, we investigate the influence of a gate electric field on the tunneling current for the contact of impurity graphene nanoribbon with a metal or quantum dots. Based on the Hamiltonian for graphene in the tight-binding approximation, the density of states is calculated, which allows us to obtain a tunneling current. We analyze the effect of the field magnitude on the detecting possibility of an impurity in the graphene nanoribbon. A sufficient change of current–voltage characteristic (CVC) of the contact is observed, with an increase in the constant electric field applied parallel to the nanoribbon plane.

scholarly journals Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 470
Author(s):  
Xiaolu Yuan ◽  
Jiangwei Liu ◽  
Jinlong Liu ◽  
Junjun Wei ◽  
Bo Da ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Annealing Temperature ◽  
Electronic Devices ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Specific Contact ◽  
Contact Electrode

Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρC) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρC of 1.5 × 10−3 Ω·cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρC is determined to be as low as 6.0 × 10−5 Ω·cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρC. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.

scholarly journals Two-Dimensional Electronic Transport in Rubrene: The Impact of Inter-Chain Coupling

Entropy ◽  
2019 ◽  
Vol 21 (3) ◽  
pp. 233 ◽  
Author(s):  
Ahmed Missaoui ◽  
Jouda Khabthani ◽  
Guy Trambly de Laissardière ◽  
Didier Mayou
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Ac Conductivity ◽  
Electronic Devices ◽  
Tight Binding ◽  
Two Dimensional ◽  
One Dimensional ◽  
Weakly Coupled ◽  
The Impact ◽  
1D Chains

Organic semi-conductors have unique electronic properties and are important systems both at the fundamental level and also for their applications in electronic devices. In this article we focus on the particular case of rubrene which has one of the best electronic transport properties for application purposes. We show that this system can be well simulated by simple tight-binding systems representing one-dimensional (1D) chains that are weakly coupled to their neighboring chains in the same plane. This makes in principle this rubrene system somehow intermediate between 1D and isotropic 2D models. We analyse in detail the dc-transport and terahertz conductivity in the 1D and in the anisotropic 2D models. The transient localisation scenario allows us to reproduce satisfactorily some basics results such as mobility anisotropy and orders of magnitude as well as ac-conductivity in the terahertz range. This model shows in particular that even a weak inter-chain coupling is able to improve notably the propagation along the chains. This suggest also that a strong inter-chain coupling is important to get organic semi-conductors with the best possible transport properties for applicative purposes.

Educational STEM designing of virtual and real devices on the Arduino platform

2020 ◽  
pp. 17-27
Author(s):  
S. G. Grigoriev ◽  
M. V. Kurnosenko ◽  
A. M. Kostyuk
Keyword(s):  
Virtual Environments ◽  
Electronic Devices ◽  
Practical Training ◽  
Full Time ◽  
Stem Design ◽  
Face To Face ◽  
Interdisciplinary Knowledge ◽  
Virtual Modeling ◽  
Surface Mounting

The article discusses possible forms of educational STEM projects in the field of electronics and device control using Arduino controllers. As you know, the implementation of such STEM projects can be carried out not only using various electronic constructors, but also using virtual modeling environments. The knowledge obtained during modeling in virtual environments makes it possible to increase the efficiency of face-to-face practical training with a real constructor, and to improve the quality of students’ knowledge. The use of virtual modeling environments in combination with the use of real constructors provides links between distance and full-time learning. A real constructors can be used simultaneously by both the teacher and the student, jointly practicing the features of solving practical problems. The article provides examples of using a virtual environment for preliminary prototyping of circuits available in the documentation for electronic constructors, to familiarize students with the basics of designing and assembling electronic circuits using the surface mounting method and on a breadboard, as well as programming controllers on the Arduino platform that control electronic devices. This approach allows students to accelerate the assimilation of various interdisciplinary knowledge in the field of natural sciences using STEM design.

Current‐voltage relation in a time‐dependent diode

1985 ◽  
Vol 47 (2) ◽  
pp. 115-117 ◽  
Author(s):  
Abraham Kadish ◽  
William Peter ◽  
Michael E. Jones
Keyword(s):  
Time Dependent ◽  
Current Voltage ◽  
Current Voltage Relation

Regulator Circuit Transformer Voltage-Second Product Analysis

2014 ◽  
Vol 529 ◽  
pp. 501-505
Author(s):  
Chi Zhang ◽  
Ming Zhi He
Keyword(s):  
Power Supply ◽  
Power Electronic ◽  
Product Analysis ◽  
Power Regulator ◽  
Current Voltage ◽  
Three Phase ◽  
The Impact ◽  
Power Electronic Technology ◽  
Primary Current

With the continuous development of power electronic technology, the advantages of thyristor power regulator circuit gradually get more and more applications. It improves the quality of power supply, makes the equipment efficiency and power factor higher and so saves a lot of electricity. Through the calculation of the primary current when thyristor turns off in three-phase power regulator circuit with transformer load, the impact of the thyristors turn-off order on the transformer primary current voltage-second product is analysised, and through simulation the exactness is verified.

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