Investigation on the Preparation of High Precision Multilayer X-ray Fresnel Zone Plates Based on Atomic Layer Deposition Technology

2021 ◽  
Vol 50 (1) ◽  
pp. 156-164
Author(s):  
吴鹿杰 Lujie WU ◽  
文庆涛 Qingtao WEN ◽  
高雅增 Yazeng GAO ◽  
卢维尔 Weier LU ◽  
夏洋 Yang XIA ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Precision ◽  
Fresnel Zone ◽  
Atomic Layer ◽  
Fresnel Zone Plates ◽  
X Ray ◽  
Zone Plates ◽  
Layer Deposition ◽  
Deposition Technology

Investigation on the Preparation of High Precision Multilayer X-ray Fresnel Zone Plates Based on Atomic Layer Deposition Technology

2021 ◽  
Vol 50 (1) ◽  
pp. 156-164
Author(s):  
吴鹿杰 Lujie WU ◽  
文庆涛 Qingtao WEN ◽  
高雅增 Yazeng GAO ◽  
卢维尔 Weier LU ◽  
夏洋 Yang XIA ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Precision ◽  
Fresnel Zone ◽  
Atomic Layer ◽  
Fresnel Zone Plates ◽  
X Ray ◽  
Zone Plates ◽  
Layer Deposition ◽  
Deposition Technology

Recent advances in use of atomic layer deposition and focused ion beams for fabrication of Fresnel zone plates for hard x-rays

2013 ◽  
Author(s):  
Kahraman Keskinbora ◽  
Anna-Lena Robisch ◽  
Marcel Mayer ◽  
Corinne Grévent ◽  
Adriana V. Szeghalmi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Fresnel Zone ◽  
Atomic Layer ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Rays ◽  
Fresnel Zone Plates ◽  
Zone Plates ◽  
Recent Advances ◽  
Layer Deposition

scholarly journals Atomic layer deposition frequency-multiplied Fresnel zone plates for hard x-rays focusing

2018 ◽  
Vol 36 (1) ◽  
pp. 01A124 ◽  
Author(s):  
Nicolaie Moldovan ◽  
Ralu Divan ◽  
Hongjun Zeng ◽  
Leonidas E. Ocola ◽  
Vincent De Andrade ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Fresnel Zone ◽  
Atomic Layer ◽  
X Rays ◽  
Fresnel Zone Plates ◽  
Zone Plates ◽  
Layer Deposition

scholarly journals Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling. Erratum

2014 ◽  
Vol 21 (3) ◽  
pp. 640-640 ◽  
Author(s):  
Marcel Mayer ◽  
Kahraman Keskinbora ◽  
Corinne Grévent ◽  
Adriana Szeghalmi ◽  
Mato Knez ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Focused Ion Beam ◽  
Fresnel Zone ◽  
Ion Beam ◽  
Atomic Layer ◽  
X Rays ◽  
Fresnel Zone Plates ◽  
Zone Plates ◽  
Layer Deposition ◽  
Focused Ion Beam Milling

Corrections to the article by Mayeret al.[J. Synchrotron Rad.(2013),20, 433–440] are given.

Ex-situ X-ray diffraction analysis of electrode strain at TiO2 atomic layer deposition/α-MoO3 interface in a novel aqueous potassium ion battery

2016 ◽  
Vol 316 ◽  
pp. 160-169 ◽  
Author(s):  
Nicholas David Schuppert ◽  
Santanu Mukherjee ◽  
Alex M. Bates ◽  
Eun-Jin Son ◽  
Moon Jong Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffraction Analysis ◽  
Atomic Layer ◽  
Potassium Ion ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

APD-based x-ray imaging telescope using Fresnel zone plates for extremely high spatial resolution

2005 ◽  
Author(s):  
Michael R. Squillante ◽  
Richard A. Myers ◽  
Mitchell Woodring ◽  
James F. Christian ◽  
Frank Robertson ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Fresnel Zone ◽  
Fresnel Zone Plates ◽  
X Ray ◽  
Zone Plates ◽  
X Ray Imaging ◽  
Imaging Telescope

scholarly journals A modular reactor design forin situsynchrotron x-ray investigation of atomic layer deposition processes

2015 ◽  
Vol 86 (11) ◽  
pp. 113901 ◽  
Author(s):  
Jeffrey A. Klug ◽  
Matthew S. Weimer ◽  
Jonathan D. Emery ◽  
Angel Yanguas-Gil ◽  
Sönke Seifert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Reactor Design ◽  
X Ray ◽  
Layer Deposition ◽  
Deposition Processes

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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